IXYS IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 handbook
Contents
1. Low Ry o HDMOS process Rugged polysilicon gate cell structure Unclamped Inductive Switching UIS rated Low package inductance easy to drive and to protect Fastintrinsic Rectifier APPICSHORS DC DC converters e Synchronous rectification Battery chargers Switched mode and resonant mode power supplies DC choppers AC motor control e Temperature and lighting controls Low voltage relays Easy to mount with 1 screw TO 247 isolated mounting screw hole Space savings High power density 91530G 3 98 1 4 IXYS IXFH 10N90 IXFH 12N90 IXFH 13N90 D IXFM 10N90 IXFM 12N90 Symbol Test Conditions Characteristic Values T 25 unless otherwise specified min typ max TO 247 AD IXFH Outline 10 Vil 0 5 lps pulse test o lt D O N 02 0 V V 25 V f 1 MHz 315 GS Vas 10V Vg 0 5 V GS DSS l 0 5 1522 R 2 Q External 51 100 ns 123 155 10 Vy 0 5 Vyss Ip 0 5 1 27 45 nC MOS GS 985 A 19 81 20 32 0 780 49 80 nC B 120 80 21 46 0 819 C 115 75 16 26 0 610 n 0 42 K W D 3 55 3 65 0 140 gs mh mh e eh 3 Co N CO Ol O O O 2 2 2 o o O O O R Hs 0 25 K W Source Drain Diode Characteristic Values T 25 unless otherwise specified Symbol Test Conditions2. min typ max Vas 20V 10N90 10 A 12N90 12 A 13N90 13 A Ls Repetitive 10N90 40 A pulse width limited by T 12N90 48 13N90 52 A V l 21 V4 20 V 15 V Pulse test t lt 300 us duty cycle d lt 2 96 t 25 250 ns di dt 100 A us T 125 C 400 ns V 100 i T 25 1 uC 125C 2 uC l T 25 10 A T 125 C 15 Dim Millimeter Min Max 38 61 39 12 1 19 43 19 94 0 97 1 09 0 038 1 53 2 92 0 060 30 15 BSC 1 5 21 5 71 0 92000 IXYS All rights reserved uu 2 4 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 025 LiIXYS Fig 1 Output Characteristics 1 Amperes Normalized Roson 1 Amperes 50 25 0 25 50 75 Fig Roson vs Drain Current l5 Amperes Fig 5 Drain Current vs Case Temperature 98 100 125 150 Te Degrees C 2000 IXYS All rights reserved IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 1 Amperes Normalized Normalized Fig 2 Input Admittance EINEN sss _ IL _ LL 4 I X qo o 2 50 2 25 50 25 0 25 50 75 0 1 2 3 4 5 6 7 8 9 10 Vas Volts Fig 4 Temperature Dependence of Drain to Source Resistance 111111 7 pL LE 100 125 150 T Degrees C Fig 6 Temperature Dependence of Breakdown and Threshold Voltage 0 5 5
3. 0 25 0 25 50 75 100 125 150 T Degrees C IXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10 90 12N90 Fig 7 Gate Charge Characteristic Curve Fig 8 Forward Bias Safe Operating Area ML ts T 10 Limited by Roson 100us d TN S _ 1 I 1ms lt _ 1 10ms 100ms 0 0 1 0 25 50 75 100 125 150 1 10 100 1000 Gate Charge nCoulombs Vps Volts Fig 9 Capacitance Curves Fig 10Source Current vs Source to Drain Voltage LL e o E 2 O 5 a a Q 0 00 02 04 06 08 10 12 14 Vcg Volts Vsp Volts Fig 11 Transient Thermal Impedance Y i D 0 5 o 01 D 0 2 e e D 0 1 D 0 0 G 001 Dz0 0 D 0 01 C Single Pulse 0 001 0 00001 0 0001 0 001 0 01 0 1 1 10 Pulse Width Seconds 2000 IXYS All rights reserved
4. HiPerFET Power MOSFETs N Channel Enhancement Mode High dv dt Low t HDMOS Family Test Conditions T 25 to 150 C J T 25 to 150 C Ros 1 MO Continuous Transient T 25 T 25 pulse width limited by T y T 25 T 25 C l lt law di dt lt 100 A us V5 Voss T 150C R 220 T 25 G 1 6 mm 0 062 in from case for 10 s Mountingtorque Test Conditions IXFH IXFM10N90 IXFH IXFM12N90 IXFH13N90 S Maximum Ratings 900 V 900 V 20 V 30 V 10N90 10 A 12N90 12 A 13N90 13 A 10N90 40 A 12N90 48 A 13N90 13 A 10N90 10 A 12N90 12 A 13N90 13 A 30 mJ 5 V ns 300 W 55 150 150 ze 55 150 4 300 eC 1 13 10 TO 204 18g TO 247 6 g Characteristic Values T 25 unless otherwise specified Vos 0 V 1 V Vus lp 4 mA Vas 20 Voc Vos 0 Vos Voss T 25 Va 0 V T 125 C Vos 10 V 1 0 5 Ip 10N90 12N90 13N90 Pulse test t lt 300 us duty cycle d lt 2 min typ max 900 V 2 0 4 5 V 100 nA 25 1 mA 1 1 Q 09 Q 08 IXYS reserves the right to change limits test conditions and dimensions 2000 IXYS All rights reserved 900V 10 1 19 900V 12 0 90 900V 13 80 t x 250 ns TO 247 AD IXFH TO 204 AA IXFM ss D Gate D Drain S Source Features International standard packages
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IXYS IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 handbook