ST ST3237E handbook
Contents
1. SZA ST3237E 15KV ESD PROTECTED 1uA 3 TO 5 5V 250KBPS RS 232 TRANSCEIVER WITH STAND BY a EDS PROTECTION FOR RS 232 I O PINS 15KV HUMAN BODY MODEL 8KV IEC 1000 4 2 CONTACT DISCHARGE a 1uA LOW POWER SHUTDOWN WITH RECEIVERS ACTIVE mw GUARENTEED DATA RATE 250Kbps Normal Operation 1Mbps Very High Speed Operation GUARANTEED SLEW RATE RANGE 6V us Normal Operation 24V us Very High Speed Operation 0 1uF EXTERNAL CAPACITORS FLOW THROUGH PINOUT AVAILABLE IN SO 28 AND SSOP 28 LOW SUPPLY CURRENT 300uA DESCRIPTION The ST3237E is a 3V to 5 5V powered EIA TIA 232 and V 28 V 24 communication interfaces high data rate capability and enhanced electrostatic discharge ESD protection at 8KV using IEC1000 4 2 contact discharge and 15kV using Human Body Model HBM The other pins are protected with standard ESD protection at Table 1 Order Codes 2kV using HBM method The ST3237C is a transceiver 5 drivers 3 receivers for fast modem applications The device has a proprietary low dropout transmitter output stage providing true RS 232 performance from a 3V to 5 5V supply using a dual charge pump The device is guaranteed to run at data rates of 250Kbps in the normal operation mode and 1Mbps in the very high speed operation mode while maintaining RS 232 output levels Type ee Package Comments ST3237ECD 0 to 70 C SO 28 Tube 27parts per tube 12tube per box ST3237EBD 402. 4 5 to 5 5 0 047 0 33 0 33 0 33 0 1 3 0 to 5 5 0 22 0 1 0 1 0 1 0 1 6 15 17 ST3237E TYPICAL PERFORMANCE CHARACTERISTICS unless otherwise specified Tj 25 C Figure 3 LOW Level Receiver Output Current CS07910 lon mA 2 5 5 0 Vec 5V Vec 3 3V 75 Vec 3 6V 0 0 Vec 4 5V 12 5 Vec 5V 1 Vec VoH V All Pin with Standard ESD Protection Figure 4 HIGH Level Receiver Output Current cS07920 lo mA Vec 5 5V 17 5 Vec 5V 15 0 Wood BV 12 5 10 0 Vec 3 6V Vec 3 3V 7 5 De 5 0 2 5 0 0 2 3 4 5 Vo V O 15 KV Advanced ESD Protection Transmitters Output 0512680 15 kV Advanced ESD Protection Receivers Inputs c512710 ak AA pK E CS12670 Note The High ESD protected pins are the I O RS232 line transmitter out and receiver in The other pins guarantee 2KV HBM ESD pro tection versus ground by means of diodes APPLICATION NOTE This application note describes the procedure for determining the susceptibility and the test method to verify ST ESD advanced protection on RS 232 or RS485 I O device Static electricity is defined as an electrical charge caused by an imbalance of electrons on the surface of a material This imbalance of electrons produces an electric field that can be m
3. 2 18 4 0 716 0 724 Ko 2 9 3 1 0 114 0 122 Po 3 9 4 1 0 153 fF 0 161 P 11 9 12 1 0 468 0 476 N Y Y A i O wu T ee Po Bo zz O DO Ko Ao P i Note Drawing not in scale ky 12 15 ST3237E Tape amp Reel SSOP28 MECHANICAL DATA N C Y Y A i i LT Po Bo vo LODO OA i J a Ko AO _P Note Drawing not in scale 1577 13 15 ST3237E Table 13 Revision History Date Revision Description of Changes 21 Mar 2005 5 TSSOP has been removed 14 15 ST3237E Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All ot
4. Typical values are referred to Ta 25 C Symbol Parameter Test Conditions Min Typ Max Unit Vtout Output Voltage Swing All Transmitter outputs are loaded with 5 5 4 V 3KQ to GND Rrout Transmitter Output Resistance Voc OV Vout 2V 300 10M Q lsc Output Short Circuit Current 60 mA lrou Output Leakage Current Vec OV or 3 3V to 5 5V Vout 12V 25 uA Transmitters Disable Table 9 Receiver Electrical Characteristics Cy C4 0 1uF tested at 3 3V 10 Voc 3V to 5 5V Ta 40 to 85 C unless otherwise specified Typical values are referred to Ta 25 C Symbol Parameter Test Conditions Min Typ Max Unit lo Output Leakage Current Receiver Disabled EN Vec 0 05 10 uA Vor Output Voltage Low lout 1mA 0 4 V Voy Output Voltage High lout 1mA Vec 0 Vec 0 1 V 6 Vrn Receiver Input Voltage 25 25 V Operating Range Vai RS 232 Input Threshold Ty 25 C Vgc 3 3V 0 6 rea V Low Ta 25 C Vog 5V os 15 Vain RS 232 Input Threshold Ty 25 C Voc 3 3V 1 5 2 4 V High Ta 25 C Vog 5V 12 24 Vr Hys Input Hysteresis 0 3 V Rain Input Resistance Ta 25 C 3 5 7 KQ 4 15 ky Table 10 Timing Characteristics ST3237E C4 C4 0 1uF tested at 3 3V 10 Voc 3V to 5 5V Ta 40 to 85 C unless otherwise specified Typical values
5. are referred to Ta 25 C Symbol Parameter Test Conditions Min Typ Max Unit Dr _ Maximum Data Rate RL 3KQ C 1000pF 250 Kbps one transmitter switching VHSCI GND R_ 3KQ C 250pF 1000 Kbps one transmitter switching VHSCI Vcc Vec 3 to 4 5V R 3KQ_ C 1000pF 1000 Kbps one transmitter switching VHSCI Vec Voc 4 5 to 5 5V tpH_R Propagation Delay Input to Rix to Rout C 150pF 0 15 us tema Output tpu r Propagation Delay Input to Ry 3kQ C 1000pF tpr Output VHSCI Vec 400 ns VHSCI GND 1000 ns tr_skew Transmitter Skew lteaL trial VHSCI GND 300 ns IteHL trLHl VHSCI Voc 50 ns tR_ SKEW Receiver Skew IteHL trLul 100 ns toger Receiver Output Enable Normal Operation 50 ns Time topp Receiver Output Disable Normal Operation 120 ns Time Spt Transition Slew Rate Ty 25 C RL 3to 7KQ Voc 3 3V measured from 3V to 3V or 3V to 3V C 150pF to 1000pF 6 30 V us VHSCI GND 24 150 V us CL 150pF to 1000pF VHSCI Vec 4 30 V us C 150pF to 2500pF VHSCI GND Transmitter Skew is measured at the transmitter zero cross points ky 5 15 ST3237E Figure 2 Application Circuits LOGIC INPUTS LOGIC OUTPUTS Table 11 Capacitance Value uF RS232 OUTPUTS gt gt gt gt gt e RS232 INPUTS AAAA CSON711 Vec C1 C2 C3 C4 Cbypass 3 0 to 3 6 0 22 0 22 0 22 0 22 0 1 3 1 to 3 6 0 1 0 1 0 1 0 1 0 1
6. easured and that can influence other objects at a distance Electrostatic discharge is defined as the transfer of charge between bodies at different electrical potentials Electrostatic discharge ESD can change the electrical characteristics of a ky semiconductor device degrading or destroying it Any input or output port I O allows access communication with other pieces of equipment by external connectors These connectors are directly linked by the I O pins of RS 232 or RS485 interface ST provides the E series by advanced high ESD protection structure The protection functionality is tested in two different conditions The first model is used to simulate the HUMAN BODY MODEL HBM event A similar discharge can occur from a charged conductive object such as a metallic tool or fixture The model used to characterize this event is known as the Machine Model A Human Body Model circuit and waveform is presented in Figures below 7115 ST3237E Figure 6 Human Body Model Circuit Rcharge 20to50MO R Discharge KO High Device Under Voltage C 100nF Test Figure 7 Human Body Model Current Waveform CS12690 The second model is IEC 1000 4 2 and is used to simulate the reaction of the device on equipment when subjected to electrostatic discharges which may occur from personnel to objects near vital Figure 8 IEC 1000 4 2 Circuit igh Voltage Source 8 15 c512730 instrumentatio
7. eceiver Output Voltage 22 T3in Third Transmitter Input Voltage 23 T2in Second Transmitter Input Voltage 24 Tin First Transmitter Input Voltage 25 C4 Negative Terminal of Voltage Doubler Charge Pump Capacitor 26 Voc Supply Voltage 27 V 5 5V Generated by the Charge Pump 28 Cy Positive Terminal of Voltage Doubler Charge Pump Capacitor 2 15 4 ST3237E Figure 1 Pin Configuration CS00720 Table 3 Absolute Maximum Ratings Symbol Parameter Value Unit Voc Supply Voltage 0 3 to 6 V V Doubled Voltage Terminal 0 3 to 7 V V Inverted Voltage Terminal 0 3 to 7 V V V 13 V Tin Transmitter Input Voltage Range 0 3 to 6 V SHDN EN 0 3 to 6 V VHSCI Very High Speed Control Input 0 3 to Vcc 0 3 V Rin Receiver Input Voltage Range 25 V TouT Transmitter Output Voltage Range 13 2 V Rout Roura Receiver Output Voltage Range 0 3 to Vcc 0 3 V tsuort Short Circuit Duration on Tour one at a time Continuous Tstg Storage Temperature Range 65 to 150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur Functional operation under these condition is not implied V and V can have a maximum magnitude of 7V but their absolute addition can not exceed 13 V Table 4 Shutdown And Enable Control Truth Table SHDN EN T OUT R OUT R OUTB 0 0 High Z Active Active 0 1 High Z High Z Active 1 0 Acti
8. her names are the property of their respective owners 2005 STMicroelectronics All Rights Reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America www st com 1577 15 15 WWW ALLDATASHEET COM Copyright Each Manufacturing Company All Datasheets cannot be modified without permission This datasheet has been download from www AllDataSheet com 100 Free DataSheet Search Site Free Download No Register Fast Search System www AllDataSheet com
9. n Direct Contact and indirect Air Gap applications of discharges to the equipment under test EUT are possible Test characteristics are shown in circuit waveform and table below RDischarge 330 Y Device Under Test 512700 Figure 9 IEC 1000 4 2 Current Waveform l at 60 ns 10 7 tp O 7ns to Ins 30ns La 60ns Table 12 Characteristics Of The ESD Generator ST3237E Level Indicated First Peak Current of Rise Time With Discharge Current at 30 ns Current at 60 ns Voltage Discharge 10 Switch 1 30 30 1 2KV 75A 0 7 to Ins 4A 2A 2 4 KV 15A 0 7 to Ins 8A 4A 3 6 KV 22 5A 0 7 to Ins 12A 6A 4 8 KV 30A 0 7 to Ins 16A 8A ky 9 15 ST3237E SO 28 MECHANICAL DATA mm inch MIN TYP MAX MIN TYP MAX 0016023 10 15 ky ST3237E SSOP28 MECHANICAL DATA A E 0 209 0 65 BSC 0 0256 BSC L 0 55 0 75 0 95 0 022 0 030 0 037 D El PIN 1 IDENTIFICATION 1 11 15 ST3 237E Tape amp Reel SO 28 MECHANICAL DATA mm inch DIM MIN TYP MAX MIN TYP MAX A 330 12 992 C 12 8 13 2 0 504 0 519 D 20 2 0 795 Ao 10 8 11 0 0 425 0 433 Bo 18
10. to 85 C SO 28 Tube 27parts per tube 12tube per box ST3237ECDR 0 to 70 C SO 28 Tape amp Reel 1000 parts per reel ST3237EBDR 40 to 85 C SO 28 Tape amp Reel 1000 parts per reel ST3237ECPR 0 to 70 C SSOP 28 Tape amp Reel 1350 parts per reel ST3237EBPR 40 to 85 C SSOP 28 Tape amp Reel 1350 parts per reel March 2005 Rev 5 1 15 ST3237E Table 2 Pin Description PIN N SYMBOL NAME AND FUNCTION 1 Co Positive Terminal of Inverting Charge Pump Capacitor 2 GND Ground 3 Co Negative Terminal of Inverting Charge Pump Capacitor 4 V 5 5V Generated by the Charge Pump 5 Tlout First Transmitter Output Voltage 6 T2ouT Second Transmitter Output Voltage 7 T3ouT Third Transmitter Output Voltage 8 Rtin First Receiver Input Voltage 9 R2in Second Receiver Input Voltage 10 T4ouT Fourth Transmitter Output Voltage 11 R3 n Third Receiver Input Voltage 12 T5out Fifth Transmitter Output Voltage 13 EN Receiver Enable Active Low 14 SHDN Shutdown Control Active Low 15 VHSCI Very High Speed Control Input Connected to GND for normal operation connected to VCC for 1Mbps transmission rates 16 Riouts Non Inverting Complementary Receiver Output Always Active 17 T5in Fifth Transmitter Input Voltage 18 R3ouT Third Receiver Output Voltage 19 T4in Fourth Transmitter Input Voltage 20 R2our Second Receiver Output Voltage 21 Rlour First R
11. ve Active Active 1 1 Active High Z Active Table 5 ESD Performance Transmitter Outputs Receiver Inputs Symbol Parameter Test Conditions Min Typ Max Unit ESD ESD Protection Voltage Human Body Model 15 kV ESD ESD Protection Voltage IEC 1000 4 2 Contact Discharge 8 kV ky 3 15 ST3237E Table 6 Electrical Characteristics C4 C4 O 1uF Vcc 3V to 5 5V Ta 40 to 85 C unless otherwise specified Typical values are referred to Ta 25 C Symbol Parameter Test Conditions Min Typ Max Unit IsuppiY Vcc Power Supply Current SHDN Voc No Load 0 3 1 mA Ishon Shutdown Supply Current SHDN GNDVT n GND or Voc 1 5 uA Table 7 Logic Input Electrical Characteristics C4 C4 O 1uF Vcc 3V to 5 5V Ta 40 to 85 C unless otherwise specified Typical values are referred to Ta 25 C Symbol Parameter Test Conditions Min Typ Max Unit Vin Input Logic Threshold Low T IN VHSCI EN SHDN 0 8 V Note 1 Vi Input Logic Threshold High T IN VHSCI EN SHDN Vec 3 3V 2 V Voc 5V 2 4 liL Input Leakage Current T IN VHSCI EN SHDN 1 0 uA Vuys Transmitter Input 0 25 V Hysteresis Note 1 Transmitter input hysteresis is typically 250mV Table 8 Transmitter Electrical Characteristics C4 C4 0 1uF tested at 3 3V 10 Voc 3V to 5 5V Ta 40 to 85 C unless otherwise specified
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ST ST3237E handbook