FAIRCHILD FDH038AN08A1 handbook
Contents
1. 2000 i 1000 188 5 li 4 5 100 gt x LJ rh 2 4 10ms 9 406 EN d 4 z E OPERATION IN THIS AREA MAY BE VA a LIMITED BY rps ow DC 71 E SINGLE PULSE E Ty MAX RATED L Tc 25 C 0 1 1 1 LECL 0 1 1 10 100 Vps DRAIN TO SOURCE VOLTAGE V Figure 5 Forward Bias Safe Operating Area 160 PULSE DURATION 80ms DUTY CYCLE 0 5 MAX Vpp 15V 120 80 T 55 Ip DRAIN CURRENT A 40 3 0 3 5 4 0 4 5 5 0 Ves GATE TO SOURCE VOLTAGE V 5 5 6 0 Figure 7 Transfer Characteristics Vas 6V Ves 10V PULSE DURATION 80us DUTY CYCLE 0 5 MAX DRAIN TO SOURCE ON RESISTANCE mQ gt 0 20 40 60 80 Ip DRAIN CURRENT A Figure 9 Drain to Source On Resistance vs Drain Current las AVALANCHE CURRENT A NOTE Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6 Unclamped Inductive Switching Capability Ip DRAIN CURRENT A NORMALIZED DRAIN TO SOURCE Typical Characteristics To 25 unless otherwise noted 500 100 IfRzO tav LlAg 1 3 RATED BVpss Vpp If R 0 tay L R In las R 1 3 RATED BVpss 1 STARTING T 25 C2. FAIRCHILD 21 SEMICONDUCTOR FDHO38AN08A1 N Channel PowerTrench MOSFET 75V 80A 3 8 Features ps oN 3 5mO Typ Vas 10V Ip 80A Qg tot 125nC Typ Vas 10V Internal Gate Resistor Rg 200 Typ Low Miller Charge Low Qgg Body Diode UIS Capability Single Pulse and Repetitive Pulse Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE TO 247 February 2003 Applications 42V Automotive Load Control Starter Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC DC converters and Off line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems MOSFET Maximum Ratings 25 unless otherwise noted Symbol Parameter Voss Drain to Source Voltage Ratings 75 Gate to Source Voltage 320 Drain Current Continuous Tc 158 Vas 10V 80 Continuous T4 25 Vas 10V with Roja 309C W 22 Pulsed Figure 4 Single Pulse Avalanche Energy Note 1 1 17 Power dissipation 450 Derate above 25 3 0 Ty Tera Operating and Storage Temperature Characteristics Thermal Resistance Junction to Case TO 247 Thermal Rouc 55 to 175 C W Rosa Thermal Resistance Junction to Ambient TO 247 30 C W This product has been designed to meet the extreme test conditi
3. NG T 150 C 0 01 0 1 tay TIME IN AVALANCHE ms 10 100 Tc 25 C PULSE DURATION 8045 DUTY CYCLE 0 5 MAX 0 0 5 1 0 1 5 Vps DRAIN TO SOURCE VOLTAGE V Figure 8 Saturation Characteristics 2 5 PULSE DURATION 80us DUTY CYCLE 0 5 MAX 2 0 o z 5 D 1 5 tc z 1 0 Vas 10V Ip 80A 0 5 80 40 0 40 80 120 160 200 Figure 10 Normalized Drain to Source On Resistance vs Junction Temperature Ty JUNCTION TEMPERATURE 2003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQH Typical Characteristics To 25 unless otherwise noted 1 4 12 T Vas Vps lp 2504A Ip 250 1 2 ug Ng Ea 10 1 o5 a9 z gt az No 08 EZ dd xo AS zo S B 06 Nu 10 zt 4 m zm 0 4 0 2 0 9 80 40 0 40 80 120 160 200 80 40 0 40 80 120 160 200 Ty JUNCTION TEMPERATURE C Ty JUNCTION TEMPERATURE C Figure 11 Normalized Gate Threshold Voltage vs Figure 12 Norma
4. No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev 12
5. PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design
6. Reverse Transfer Capacitance 340 2 pF QgtoT Total Gate Charge at 10V Ves OV to 10V 125 160 nC Qg TH Threshold Gate Charge Vas OV to2V _ Vpp 40V 17 22 nC Qgs Gate to Source Gate Charge Ip 80A a 57 nC Gate Charge Threshold to Plateau lg 1 0mA 42 nC Gate to Drain Miller Charge 30 nC Switching Characteristics Vas 10V ton Turn On Time 345 ns ta on Turn On Delay Time 88 ns t Rise Time Vpp 40V Ip 80A 141 ns ta OFF Turn Off Delay Time Ves 10V Rgs 2 40 232 ns ty Fall Time 126 ns torr Turn Off Time 530 ns Drain Source Diode Characteristics e Isp 80A 1 25 V V Source to Drain Diode Voltage sD U idi s Isp 40A 10 v tr Reverse Recovery Time Isp 75A dlgp dt 100A us 50 ns QRR Reverse Recovered Charge Isp 75A dlgp dt 100A us 65 nC Notes 1 Starting Ty 25 C L 0 65mH ls 60A 92003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQH Typical Characteristics To 25 unless otherwise noted Tc CASE TEMPERATURE Ambient Temperature Figure 1 Normalized Power Dissipation vs 12 280 CURRENT LIMITED rn 240 BY PACKAGE 5 2 E 0 8 z 2 O 0 6 a amp 2 2 o4 amp a a 02 o 40 n Ves 10V 0 0 1 0 25 50 75 100 125 150 175 25 50 7
7. 1 0 30 N 10 TOX 1 L 1u W 1u MODEL MweakMOD NMOS 2 73 KP 0 02 IS 1e 30 N 10 TOX 1 L 1u W 1u RG 200 RS 01 MODEL RbreakMOD RES 1 1 05 3 2 9 0 7 MODEL RdrainMOD RES 1 1 8 2 2 2 2 4 MODEL RSLCMOD RES 1 2 0 3 TC2 1 0e 5 MODEL RsourceMOD RES TC1 5 0e 3 2 1 0 6 MODEL RvthresMOD RES TC1 4 2e 3 TC2 1 8e 5 MODEL RvtempMOD RES TC1 4 5e 3 TC2 2 0e 6 MODEL S1AMOD VSWITCH MODEL S1BMOD VSWITCH MODEL S2AMOD VSWITCH MODEL S2BMOD VSWITCH RON 1e 5 ROFF 0 1 VON 4 VOFF 1 5 RON 1e 5 ROFF 0 1 VON 1 5 VOFF 4 RON 1e 5 ROFF 0 1 VON 0 5 VOFF 0 5 RON 1e 5 ROFF 0 1 VON 0 5 VOFF 0 5 ENDS Note For further discussion of the PSPICE model consult A New PSPICE Sub Circuit for the Power MOSFET Featuring Global Temperature Options IEEE Power Electronics Specialist Conference Records 1991 written by William J Hepp and C FrankWheatley 2003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQJ SABER Electrical Model REV January 2003 template FDH038ANO08A1 n2 n1 n3 electrical n2 n1 n3 var i iscl dp model dbodymod isl 2 4e 11 nl 1 02 rs 1 65e 3 trs1 3 2e 3 trs2 2 0e 7 cjo 6 0e 9 m 5 6e 1 tt 2 38e 8 xti 3 9 dp model dbreakmod rs 1 5e 1 trs1 1 0e 3 trs2 8 9e 6 dp model dplcapmod cjo 1 5e 9 isl 10e 30 nl 10 m 0 47 m model mmedmod type _n vto 3 2 kp 1 5 is 1e 30 tox 1 m model mstrongmod type _n vto 3 95 kp 2
8. 35 is 1 0e 30 tox 1 m model mweakmod type _n vto 2 73 kp 0 02 is 1 0e 30 1 5 0 1 Sw vcsp model s1amod ron 1e 5 roff 0 1 von 4 voff 1 5 Sw vcsp model sibmod ron 1e 5 roff 0 1 von 1 5 voff 4 Sw vcsp model s2amod ron 1e 5 roff 0 1 von 0 5 voff 0 5 Sw vcsp model s2bmod ron 1e 5 roff 0 1 von 0 5 voff 0 5 LDRAIN c ca n12 n8 1 0e 9 DPLCAP DRAIN c cb n15 n14 3 1e 9 we 10 n6 n8 8 22e 9 RLDRAIN dp dbody n7 n5 model dbodymod 51 dp dbreak n5 n11 model dbreakmod RSLC2 dp dplcap n10 n5 model dplcapmod Y 50 DBREAK spe ebreak n11 n7 n17 n18 84 9 y spe eds n14 n8 n5 n8 1 ESG 11 Spe egs n13 n8 n6 n8 1 EVTHRES DBODY spe esg n6 n10 n6 n8 1 MWEAK AN spe evthres n6 n21 n19 n8 1 LGATE EVTEMP Cm GATE RGATE 6 spe eviemp n20 n6 n18 22 1 216 18 wie 9 20 i it n8 n17 1 RLGATE 14 5 A CIN LSOURCE 7 SOURCE ligate n1 n9 4 81e 9 8 n2 n5 1 0e 9 RSOURCE I source n3 n7 4 63e 9 RLSOURCE EBREAK 12 RBREAK res rlgate n1 n9 48 1 1 44 17 18 res rldrain n2 n5 10 res rlsource n3 n7 46 3 SIBo eS2B 19 m mmed n16 n6 n8 n8 model mmedmod 1 w 1u 14 O m mstrong n16 n8 n8 model mstrongmod I 1u w u gas EDS m mweak n16 n21 n8 n8 model mweakmod l 1u w 1 res rbreak n17 n18 1 tc1 1 05e 3 tc2 9 0e 7 RVTHRES x
9. 5 100 125 150 175 Tc CASE TEMPERATURE C Figure 2 Maximum Continuous Drain Current vs Case Temperature 2 Ro ya 30 C W 1 DUTY CYCLE DESCENDING ORDER F 0 5 0 2 B 0 1 L uz 0 05 Sa 0 02 5 0 01 9 d 3g NE NOTES DUTY FACTOR D 11 0 SINGLE PULSE PEAK T Ppy X Zojc X Rouc 0 01 105 10 103 102 107 109 10 t RECTANGULAR PULSE DURATION s Figure 3 Normalized Maximum Transient Thermal Impedance um 25 TITT ka TRANSCONDUCTANCE FOR TEAMS 1 MAY LIMIT CURRENT ABOVE 25 DERATE PEAK TRILL IN THIS REGION CURRENT AS FOLLOWS _ 1000 oe 5 4 42 ks 175 7c 2 L Vas 10V le 150 Bis 5 4 x lt q 100 50 10 104 103 10 107 10 10 t PULSE WIDTH s Figure 4 Peak Current Capability 2003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQJ
10. RAIN 02 Dbody 7 5 DbodyMOD RLDRAIN Dbreak 5 11 DbreakMOD RSLC1 51 Dplcap 10 5 DplcapMOD RSLC2 2 Ebreak 11 7 17 18 84 9 ESLG Eds 14858 1 50 Egs 138681 2 50610681 RDRAN EBREAK 2 DBODY Evthres 6 21 198 1 x EVTHRES Evtemp 20 6 18 22 1 I MWEAK LGATE EVTEMP a GATE RGATE _ It 8 17 1 10 wee 14 I MSTRO Lgate 1 9 4 81 9 REGATE LSOURCE Ldrain 2 5 1 0e 9 CIN 8 SOURCE Lsource 3 7 4 63e 9 7 o 3 lop RLSOURCE RLgate 1 9 48 1 RLdrain 2 5 10 1270 RBREAK RLsource 3 7 46 3 g 17 18 Mmed 16 6 8 8 MnedMOD S1B o S2B RVTEMP Mstro 16 6 8 8 MstroMOD CA 13 CB 4 19 Mweak 16 21 8 8 MweakMOD VBAT EGS EDS Rbreak 17 18 RbreakMOD 1 o Rdrain 50 16 RdrainMOD 2 0 4 22 Rgate 9 20 20 5 RSLC1 5 51 RSLCMOD 1 0 6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 2 6e 3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 6 12 13 8 S1AMOD S1b 13 12 138 S1BMOD 52 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE V 5 51 ABS V 5 51 PWR V 5 51 16 6 300 10 MODEL DbodyMOD D IS 2 4E 11 N 1 02 RS 1 65e 3 TRS1 3 2e 3 TRS2 2 0e 7 CJO 6 0e 9 M 5 6e 1 TT 2 38e 8 XTI 3 9 MODEL DbreakMOD D RS 1 5e 1 TRS1 1 0e 3 TRS2 8 9e 6 MODEL DplcapMOD D CJO 1 5e 9 15 1 0 30 N 10 M 0 47 MODEL MmedMOD NMOS VTO 3 2 KP 1 5 IS 1 0e 30 N 10 TOX 1 L 1u W 1u RG 20 MODEL MstroMOD NMOS VTO 3 95 KP 235 15
11. ermal model FDHO38ANO08A1T RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERMS5 RTHERM6 th JUNCTION CTHERM1 CTHERM2 CTHERM3 CTHERM4 5 6 62003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQJ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FACT ImpliedDisconnect PACMAN SPM ActiveArray FACT Quiet Series ISOPLANAR POP Stealth Bottomless FAST LittleFET Power247 SuperSOT 3 CoolFET FASTr MicroFET PowerTrench SuperSOT 6 CROSSVOLT FRFET MicroPak QFET SuperSOT 8 DOME GlobalOptoisolator MICROWIRE Qs SyncFET EcoSPARK GTO MSX Optoelectronics TinyLogic 2 57 MSXPro Quiet Series TruTranslation EnSigna 2 OCX RapidConfigure UHC Across the board Around the world OCXPro RapidConnect UltraFET The Power Franchise OPTOLOGIC SILENT SWITCHER VCX Programmable Active Droop OPTOPLANAR SMART START DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
12. lized Drain to Source Junction Temperature Breakdown Voltage vs Junction Temperature 20000 S 10 Ciss Cas Cap 10000 amp A E 5 L Cps Cap o ul gt 6 o z o 5 amp 1000 Crss 9 4 4 o E WAVEFORMS IN 2 DESCENDING ORDER 1 2 lp 80A Vas OV f 1MHz gt Ip 40A 100 0 0 1 1 10 75 0 25 50 75 100 125 Vps DRAIN TO SOURCE VOLTAGE V Qs GATE CHARGE nC Figure 13 Capacitance vs Drain to Source Figure 14 Gate Charge Waveforms for Constant Voltage Gate Currents 2003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQJ Test Circuits and Waveforms VARY tp TO OBTAIN REQUIRED PEAK las Ves ov lg REF Ves Figure 19 Switching Time Test Circuit BVpss ip Vps las T a 7 7 el ee tav lt Figure 16 Unclamped Energy Waveforms Vpp e Qgrror gt lg REF 0 Figure 18 Gate Charge Waveforms ton lt gt torr ta orF Ves 50 lt PULSE WIDTH Figure 20 Switching Time Waveforms 2003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQJ PSPICE Electrical Model SUBCKT FDH038AN08A12 13 rev January 2003 CA 12 8 1 0e 9 Cb 15 14 3 1e 9 LDRAIN Cin 6 8 8 22e 9 DPLCAP 5 WNE D
13. ons and environment demanded by the automotive industry Fora copy of the requirements see AEC Q101 at http www aecouncil com Reliability data can be found at http www fairchildsemi com products discrete reliability index html All Fairchild Semiconductor products are manufactured assembled and tested under ISO9000 and 059000 quality systems certification 2003 Fairchild Semiconductor Corporation FDHO38ANO8A1 Rev LI V80NV8 0HQJ Package Marking and Ordering Information Device Marking Width Quantity FDH038ANO08A1 FDH038ANO08A1 TO 247 30 units Electrical Characteristics 1 25 unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics Bypss Drain to Source Breakdown Voltage Ip 250 Vas OV 75 V Zero Gate Voltage Drain Current Vpg 60V DSS E Vess 00 tere 250 less Gate to Source Leakage Current Ves 220V 100 nA On Characteristics Vas rH Gate to Source Threshold Voltage Ves lp 250A 2 4 V lp 80A Vas 10V 0 0035 0 0038 DS ON Drain to Source On Resistance 40 6V S ee p 80A 0 0074 0 008 Ty 175 C i Dynamic Characteristics Ciss Input Capacitance a 8665 pF Coss Output Capacitance os 4 Yas 0V 1320 pF Cnss
14. res rdrain n50 n16 2 0e 4 tc1 1 8e 2 tc2 2 2e 4 res rgate n9 n20 20 res rsic1 n5 n51 1e 6 tc1 2 0e 3 tc2 1 0e 5 res rsic2 n5 n50 1 0e3 res rsource n8 n7 2 6e 3 tc1 5 0e 3 tc2 1 0e 6 res rvthres n22 n8 1 tc1 4 2e 3 tc2 1 8e 5 res rvtemp n18 n19 1 tc12 4 5e 3 tc2 2 0e 6 sw vcsp s a n6 n12 n13 n8 model stamod sw vcsp sib n13 n12 n13 n8 model s1bmod Sw vcsp s2a n6 n15 n14 n13 model s2amod Sw vcsp s2b n13 n15 n14 n13 model s2bmod v vbat n22 n19 dc 1 equations i n51 2n50 iscl iscl v n51 n50 v n5 n51 1e 9 abs v n5 n51 abs v n5 n51 1e6 300 10 2003 Fairchild Semiconductor Corporation FDH038ANO08A1 Rev LI V80NV8 0HQJ REV 23 January 2003 FDHO38AN08A1T CTHERM TH 6 5 5e 3 CTHERMe 6 5 6 0e 3 5 4 7 4e 3 CTHERM4 4 3 7 65e 3 CTHERMS 3 2 5 85e 2 CTHERM6 2 TL 6 0e 1 RTHERM1 TH 6 9 0e 3 RTHERM2 6 5 2 08e 2 RTHERMS 5 4 2 28e 2 RTHERMA 4 3 7 0e 2 RTHERMS 3 2 7 5e 2 RTHERM6 2 TL 8 5e 2 template thermal model th tl thermal c th tl ctherm ctherm1 th 6 5 5e 3 ctherm ctherm2 6 5 6 0e 3 ctherm ctherm3 5 4 7 4e 3 ctherm ctherm4 4 3 7 65e 3 ctherm ctherm5 3 2 5 85e 2 ctherm ctherm6 2 tl 6 0e 1 rtherm rtherm1 th 6 9 0e 3 rtherm rtherm2 6 5 2 08e 2 rtherm rtherm3 5 4 2 28 2 rtherm rtherm4 4 3 7 0e 2 rtherm rtherm5 3 2 7 5e 2 rtherm rtherm6 2 tl 8 5e 2 SPICE Thermal Model SABER Thermal Model SABER th
Download Pdf Manuals
Related Search
FAIRCHILD FDH038AN08A1 handbook