BC556 BC559 General Purpose Transistors Si-Epitaxial PlanarTransistors handbook
Contents
1. amp 19BC 556 BC556 8C59 R General Purpose TANSSI PNP Si Epitaxial PlanarTransistors PNP Power dissipation Verlustleistung 500 mW Plastic case TO 92 Kunststoffgeh use 10D3 Weight approx Gewicht ca 0 18 g Plastic material has UL classification 94V 0 123 Geh usematerial UL94V 0 klassifiziert Standard Pinning Standard packaging taped in ammo pack 1 C 2 B 3 E Standard Lieferform gegurtet in Ammo Pack Maximum ratings T 25 C Grenzwerte T 25 C Collector Emitter voltage B open Collector Base voltage E open Emitter Base voltage C open Power dissipation Verlustleistung Collector current Kollektorstrom DC Junction temp Sperrschichttemperatur Storage temperature Lagerungstemperatur Characteristics T 25 C Kennwerte T 25 C 110 220 200 460 420 800 DC current gain Kollektor Basis Stromverh ltnis V 5V le 52 mA Small signal current gain Stromverst rkung Bun type 3a0 type GoD Input impedance Eingangsimpedanz i 1 6 4 5kQ 3 2 8 5 KQ 6 15 KQ Output admittance Ausg Leitwert h 18 lt 30 uS 30 lt 60 US 60 lt 110 uS Reverse voltage transfer ratio x 4 4 4 Spannungsr ckwirkung typ 1 5 10 typ 2 10 typ 3 10 Ic 100 mA 5 mA 1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case G ltig wenn die Anschlu dr hte in 2 mm Abstand von Geh use auf Umgebungstemperatur gehalten werde2. von Geh use auf Umgebungstemperatur gehalten werden 01 11 2003 O
3. n 8 01 11 2003 Transistors R Characteristics T 25 C Base saturation voltage Basis S ttigungsspannung Ic 100 mA Ip 5 mA V BEsat Base Emitter voltage Basis Emitter Spannung V 5V lc 2 mA Ver Collector Emitter cutoff current Kollektorreststrom Vr 00V BC 556 Tcro Vog 40 V BC 557 Icro V amp 25V BC 558 Tcro V 25V BC 559 Icro Gain Bandwidth Product Transitfrequenz V 5V le 10 mA f 100 MHz fr Collector Base Capacitance Kollektor Basis Kapazit t Ve 10 V i 0 f 1 MHz Copo Emitter Base Capacitance Emitter Basis Kapazit t Vg 0 5 V f 1 MHz Cigi Noise figure Rauschzahl V 5 V Ie 200 pA BC 556 i Ro 2KkQ f 1 kHz BC 558 Af 200 Hz BC 559 F Thermal resistance junction to ambient air W rmewiderstand Sperrschicht umgebende Luft Recommended complementary PNP transistors Empfohlene komplement re PNP Transistoren Available current gain groups per type Lieferbare Stromverst rkungsgruppen pro Typ 1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case z 580 mV 150 MHz Rina BC 556A BC 557A BC 558A Kennwerte T 25 C a gz Ko ge gz 5 660 mV Max 1 ti 700 mV 6 pF 10 dB 4 dB 200 K W BC 546 BC 549 BC 556B BC 557B BC 558B BC 559B BC 557C BC 558C BC 559C G ltig wenn die Anschlu dr hte in 2 mm Abstand
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BC556 BC559 General Purpose Transistors Si Epitaxial PlanarTransistors handbook