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United Monolithic Semiconductors CHA3093c 20-40GHz Medium Power Amplifier

1. n a E d 0 E A 2 E a a 3 o D 46 44 42 40 8 6 4 2 0 2 Pin dBm On wafer Pin Poutat 25GHz 28 440 T ke E E 0 E a M 3 i D 6 u 220 4 r 200 16 140 42 100 B 6 4 2 0 2 Pin dBm Ref DSCHA30932158 07 June 02 4 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amplifier CHA3093c On wafer Pin Pout at 30 GHz 28 440 26 420 a 400 2 99 380 2 x a 360 le vA o 18 340 gt 16 aT 320 4 E p E m 14 300 lt E bed 12 rae 280 2 10 zE ee pOUl 260 S E 8 7 r Gain 240 L 6 gy 220 4 l i 200 460 14 42 10 8 6 4 2 0 2 Pin dBm On wafer Pin Poutat40GHz 28 440 26 420 24 400 a v 22 380 20 F 360 o 18 JF 30 lt 216 oe 320 E E S ee a 14 oe 300 Z al Pa iy 1 280 E 7 Pout o 10 77 260 Eg B Gan 240 lt r E 6 a eld 220 4 det r 200 16 14 A42 100 B 6 4 2 0 2 Pin dBm Ref DSCHA30
2. 29 00 19 66 44 67 59 88 138 12 22 19 4316 13 95 168 88 30 00 17 80 56 40 58 46 132 33 2180 1681 15 15 167 61 31 00 17 46 61 68 56 48 154 53 21 36 6 65 15 78 157 73 32 00 15 16 70 64 52 06 105 41 21 50 31 90 15 57 137 58 33 00 15 09 83 96 56 43 6348 20 88 56 82 20 24 133 08 34 00 1457 8919 59 91 8924 2082 81 12 1936 132 46 35 00 13 80 92 45 54 72 94 43 20 70 10479 18 36 101 23 36 00 13 55 97 98 54 97 59 43 20 47 12910 20 65 80 50 37 00 12 80 102 27 54 75 93 32 20 11 154 27 17 69 61 37 38 00 12 55 108 34 54 06 58 24 19 72 17711 18 18 37 45 39 00 12 64 110 41 53 05 50 25 19 84 159 83 15 31 2491 40 00 1253 108 87 50 99 30 11 19 49 133 90 13 49 575 50 00 5 96 119 91 5810 f 116 39 660 158 83 375 85 06 Ref DSCHA30932158 07 June 02 3 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amplifier CHA3093c Typical On wafer Power CW Measurements Bias Conditions Vd1 2 3 4 3 5 Volt Vg1 2 3 4 for Id 330 mA On wafer Pin Pout at 20 GHz
3. 20 40 GHz e TH TH e POS Output power at 348 gain compression 20 2 dBm ESD Protection Electrostatic discharge sensitive device Observe handling precautions Ref DSCHA30932158 07 June 02 1 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amplifier CHA3093c Electrical Characteristics for Broadband Operation Tamb 25 C Vd1 2 3 4 3 5V Id 330mA eee ta ee e ferns TIGHT Ce feaman TP se en S e e EEO T maa Pulsed output power at 14B gain compression 1 output power at 1dB gain compression Pulsed output power at 14B gain compression 1 18 2 am EH She io a 3 orderinterceptpoint order intercept point Eee T E S R EHH HH ee E H H C NF Noisefigwre Noisefigure w l Mesme e Te Detected vlade at 38GHz Pout Bere 0 45 a eee 1 These values are representative for pulsed on wafer measurements that are made without bonding wires at the RF ports 2 Inthe case of a jig or a module CW mode operation the typical output power may be around 2aB less 2 Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad Absolute Maximum Ratings 1 apa panner Tass um Vds Drain bias voltage_small signal 2 T a ee Drain bias current_small signal a0 Gate
4. Power Amplifier CHA3093c Chip Assembly and Mechanical Data to Vd1 Vd2 Vd3 DC Drain supply feed T 10nF Ds pa lo Yel DC Gate supply feed to Vg2 Vg3 Vg4 DO Gate supply feed Note Supply feed should be capacitively bypassed 25um diameter gold wire is recommended 1720 35 1370 1930 290 E Du 7 3 E i Lit R a gt 150 330 630 930 1330 Bonding pad positions Chip thickness 100um all dimensions are in micrometers Number Size x y um Center position x y um Refered to bottom left origin 1 34 98 773 689 2 48 68 68 34 3 98 34 800 43 E S 4 4 34 98 1237 73 Pickup Pillow Ref DSCHA30932158 07 June 02 9 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 united _ _ monolithic semiconductors CHA3093c Ordering Information Chip form S CHA3093c99F 00 Information furnished is believed to be accurate and reliable However United Monolithic Semiconductors S A S assumes no responsability for the consequences of use of such information nor for any infringement of patents or other
5. i8 C HA 3098C TH W united _ _ monolithic semiconductors CHA3093c 20 40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband four vai vsi stage monolithic medium power amplifier It is 7 Wr SR designed for a wide range of applications from 7 s m5 T ba military to commercial communication Vd gt A 7 gt systems The backside of the chip is both RF NY P 7 P a 7 and DC grounded This helps simplify the G S Z assembly process 7 Ka OUT AB I T Build In Test monitors a DC voltage EN eal c2 m nal 77 that is representative of the microwave output la al Zev si power Vgl Vg2 Vg3 Vg4 Vdet The circuit is manufactured with a PM HEMT l process 0 15um gate length via holes through Typical on wafer measurements the substrate air bridges and electron beam S gate lithography It is available in chip form Main Features Gain amp RLoss dB E Broadband performances 20 40GHz E 20dBm output power R 22dB gain R Very good broadband input matching 15 20 25 30 35 40 45 50 R On chip output power level DC detector Rais R Low DC power consumption 330mA 3 5V ee eee Pose ee E Chip size 0 83 X 1 72 X 0 10 mm nput Rloss solid line amp output Rloss dash line Main Characteristics Tamb 25 C Parameter Typ Fop Operating frequency range
6. rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S A S Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied United Monolithic Semiconductors S A S products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S A S Ref DSCHA30932158 07 June 02 10 10 United Monolithic Semiconductors S A S united hic ane Route D partementale 128 B P 46 91401 Orsay Cedex France eee es Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09
7. to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amplifier OUTPUT POWER TEMPERATURE MEASUREMENTS IN TEST JIG 20 F 30GHz 30 28 26 24 22 f 5 20 u 248 16 11 Pout 30GHz 40 C 3 12 t Pout 30GH2 20 C 6 p Pout 30GHz 85 C 6 4 Gain 30GHz 40 C 4 Gain 30GHz 20 C 2 Gain 30GHz 85 C 0 5 143 1 9 4 5 3 f 1 3 Input power dBm OUTPUT POWER TEMPERATURE MEASUREMENTS IN TEST JIG 40 F 40GHz 30 28 28 26 26 24 24 22 L 22 218 18 S in 16 16 2 814 K Pout 40GHz 40 14 0 at Pout 40GHz 20 fT 12 5 0 Pout 40GHz 85 C N 6 Gain 40GHz 40 C 6 4 Gain 40GHz 20 C 4 2 Gain 40GHz 85 C py 2 0 T T 0 15 143 1 9 7 4 3 1 1 3 5 Input power dBm Ref DSCHA30932158 07 June 02 7 10 30 28 26 24 22 ON amp Oa CHA3093c Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amp
8. 932158 07 June 02 5 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amplifier CHA3093c Typical IN TEST JIG Power Measurements in temperature Note Jig losses included 1 dB Bias Conditions Vd1 2 3 4 3 5 Volt Vg1 2 3 4 for Id 330 mA OUTPUT POWER TEMPERATURE MEASUREMENTS IN TEST JIG 30 7 28 F 20GHz 26 24 7 wl N N an Output power dBm a ES ON E oo z Pout 20GHz 40 C Pout 20GHz 20 C Pout 20GHz 85 C Gain 20GHZ 40 C Gain 20GHz 20 C Gain 20GHz 85 C 15 13 11 9 7 4 3 Input power dBm 1 1 OUTPUT POWER TEMPERATURE MEASUREMENTS IN TEST JIG F 25GHz 30 30 28 28 26 26 24 24 22 i 22 i 20 l 20 z 18 a 3 16 162 214 145 Pout 25GHz 40 C 2 12 a 2 5410 Pout 25GHz 20 C 10 0 8 Pout 25 GHz 850 H 8 6 Gain GHz 40C 7 6 4 Gain BGH voc TT 4 Gain 25GHz 85 C S 0 0 45 43 A 9 7 6 3 A 1 3 5 Input power dBm Ref DSCHA30932158 07 June 02 6 10 7 30 28 26 Specifications subject
9. bias voltage Drain Gatevotage He Maximum continuous input power 2 4 20GHZz 1 40GHZz Maximum peak input power overdrive 3 Operating temperature range 40 to 85 Storage temperature range 55 to 125 1 Operation of this device above anyone of these parameters may cause permanent damage 2 Duration lt 1s Ref DSCHA30932158 07 June 02 2 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium Power Amplifier CHA3093c Typical Scattering Parameters On wafer Sij measurements Bias Conditions Vd1 2 3 4 3 5 Volt Vgi Vg2 3 4 for Id total 330 mA GHz e B re B re 200 977 16610 7963 8541 4450 1125 0 06 600 1097 144 60 63 16 f 150 36 3241 1570 026 4870 20 00 18 27 9966 54 79 30 38 23 06 25 87 11 02 127 42 21 00 20 55 75 06 69 47 61 55 23 87 67 24 8 60 138 79 22 00 aa doaa L Srat p anas o oaaao T 1 48 31 ia a ee 2500 2133 29 56 5405 67 67 2293 156 651 10 87 166 58 26 00 21 32 8 76 6257 37 46 2305 125 30 11 82 179 69 27 00 22 06 29 59 63 41 139 56 22 56 96 27 13 75 17991 28 00 22 21 31 27 56 43 165 63 2193 7069 1372 176 79
10. lifier CHA3093c Typical Bias Tuning The circuit schematic is given below Vdl Vd234 1y E our Vgl Vg2 Vg34 Vdet For medium power operation the four drain biases are connected altogether In a same way all the gate biases are connected together at the same power supply tuned to drive a small signal operating current of 300mA A separate access to the gate voltages of the two first stages Vg1 2 is provided in order to be able to tune the first stages for the application as a lower noise amplifier or a multiplier An additional pad is provided for monitoring the output power using the Build In Test This access when connected to an external resistor of 10 kOhm typical value provides a DC voltage which follows the output power level N E AT EEPE T P TEET E T ey AS E ET T E E E EEE A 42 i Vdet 20 GHz 14 id Vdet 25GHz eee eee ee eee ee aero l Vdet 30GHz aba eg C oO Vdet 40GHz V detected V 10kOHM gt O oO O G oO oO oO N A A O N 4 4 4 4 4 4 o e L No A D KN NN NELL NO N N Pout dBm On wafer power measurements versus output power Ref DSCHA30932158 07 June 02 8 10 Specifications subject to change without notice United Monolithic Semiconductors S A S Route D partementale 128 B P 46 91401 Orsay Cedex France Tel 33 0 1 69 33 03 08 Fax 33 0 1 69 33 03 09 20 40GHz Medium

United Monolithic Semiconductors CHA3093c 20-40GHz Medium Power Amplifier

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