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SIEMENS TLE 4202 B Data Sheet

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1. P T0220 7 1 Plastic Transistor Single Outline 10 4 6 92 10 2 52 1 x 45 759 1 27 91 J Y A ai o i A ti V 3 E S i od e N co I SEU uds B Y 2 3 Il 2 6 eS VV 1 27 04 1 Sta gg 4 5 304 510 6 M a 7X 8 4 20 4 1 0 75 45 at dam bar max 1 8 from body 1 0 75 945 im Dichtstegbereich max 1 8 vom K rper GPT05108 Sorts of Packing Package outlines for tubes trays etc are contained in our Data Book Package Information Semiconductor Group 14 Dimensions in mm 1998 02 01
2. 1 2 V Ig 2A S1 2 2 Short circuit Isc 35 V Va 0V current To 25 C to 110 C Semiconductor Group 8 1998 02 01 SIEMENS TLE 4202 B TDB 7805 iii T O Vs T 100 uF ili 100 nF Jt uF la 220 nF Du T uF la 220 nF Du AES00614 Figure3 Test Circuit 1 Semiconductor Group 9 1998 02 01 TLE 4202 B SIEMENS hu AES00615 Waas Vy Vass Vsatu Vous Isc Ia Figure 4 Test Circuit 2 Semiconductor Group 10 1998 02 01 SIEMENS TLE 4202 B AES00616 Figure 5 Test Circuit 3 Semiconductor Group 11 1998 02 01 SIEMENS TLE 4202 B I T o13V T 100 uF T nF V o V 220 nF 10 a 220nF 4g Vo o Vaz AES00617 Figure 6 Application Circuit V VI 5_ 0 t V Vav 0 9 0 5 0 1 ton lor Lo AETOOBII Figure 7 Diagrams Semiconductor Group 12 1998 02 01 SIEMENS TLE 4202 B Saturation Voltage versus Output Current AED01340 Vsar 14 Semiconductor Group 13 Saturation Voltage versus Temperature VSAT AED01341 1 4 80 120 C 160 J 1998 02 01 SIEMENS TLE 4202 B Package Outlines
3. 351Q 67000 A 82251 hy F SIEMENS 2 A DC Motor Driver TLE 4202 B Bipolar IC Overview Features Drives motors up to 2 A e Integrated free wheeling diodes 2 5 A Short circuit proof to ground Overtemperature protection Low saturation voltages through bootstrap Wide temperature range Suitable for applications in automotive engineering P TO220 7 1 Type Ordering Code Package TLE 4202 B Q67000 A8225 P TO220 7 1 Description The two power comparators can switch magnets motors or other loads either by being separated from each other or by being combined to a full bridge circuit The IC is designed for application in motor vehicles It can be applied at package temperatures between 40 C and 130 C The IC contains two amplifiers featuring a typical open loop voltage gain of 80 dB at 500 Hz The input stages are DND differential amplifiers thus resulting in a common mode input voltage range from 0 V to approx the value of Vs and in a maximum input differential voltage of Vs To obtain low saturation voltages at the sink circuit the drive circuit of the sink transistor is connected to the supply voltage An SOA protective circuit protects the IC against ground short circuits At chip temperatures above approx 160 C the source transistors are turned off Semiconductor Group 1 1998 02 01 SIEMENS TLE 4202 B AEP00612 Figure1 Pin Configuration top view Semi
4. Q2 V 5 V Junction temperature T 150 C Storage temperature Tas 55 125 C Operating Range Supply voltage Vs 3 5 17 V Case temperature during operation To R gt 60 Vs 7 16 V 40 C R gt 90 Vs 16 V 130 C Voltage amplification at negative feedback with external connection V 30 dB Thermal resistance system case Rh sc 4 K W 1 The output voltages are kept within a permissible range by free wheel diodes Outputs Q1 and Q2 short circuit proof to ground R Resistance between output 1 and output 2 Semiconductor Group 5 1998 02 01 SIEMENS TLE 4202 B Characteristics Vs 13 V T 2 25 C Parameter Symbol Limit Values Unit Test Condition Test min typ max Circuit General Data Quiescent current Is 15 25 mA S 1 Open loop gain Gyo 50 80 dB f 500 Hz 1 Vs lt 7 V lt 16 V To 40 C to 110 C Input Characteristics Input current pins I1 12 Ii 1 3 UA V 112 0 2 Input current Io 35 70 uA Va 0 V7 Vs Jo 230 300 UA V2 lt Vs Muss Ni Input resistance R 1 5 MO f 1 Input reference Vio 1 4 1 7 2 V 1 kHz 1 voltage I3 0 V 7 0V Input offset Vio 20 20 mV 3 voltage Semiconductor Group 6 1998 02 01 SIEMENS TLE 4202 B Characteristics con d Vs 13 V T 25 C P
5. arameter Symbol Limit Values Unit Test Condition Test Circuit min typ max Output Characteristics Saturation voltages Source operation Vsato 0 9 11 V la 0 3 A S1 1 2 measured to Vs Vs 1 2 16 IV Ia 1 0A S1 1 2 Vsato 1 5 12 1 V la 2A S1 1 2 Sink operation Vsatu 0 25 10 4 V Ia 0 3A 8122 2 05 10 75 V las 1A 1252 2 Vsatu 1 13 V la 2A S1 2 2 Short circuit Isc 1 25 11 6 A Va 0V 2 current Diode forward voltage to Vs VE 1 1 3 V I lg 1A 2 to ground Ve 0 9 1 2 V I lg 1A 2 Slew rate SR 6 V us 1 falling edge Slew rate SR 6 V us 1 rising edge Switching Times Rise time of Va t 15 us 1 Fall time of Va l 15 US 1 Switch ON delay fon 3 us 1 Switch OFF delay toer x 1 5 us 1 Quiescent current Is 15 30 mA S 1 1 Semiconductor Group 7 1998 02 01 SIEMENS TLE 4202 B Characteristics Vs lt 7Vto 17 V Te 40 to 110 C Parameter Symbol Limit Values Unit Test Condition Test min typ max Circuit Saturation Voltage Source operation Vsato 0 9 11 2 V la 0 3 A S 2 measured to Vs Vs L2 1 8 V Ig 1A S 2 Vsato 15 24 V la 2A S 2 Sink operation Vsatu 0 25 0 60 V Ig 0 3A 81222 Maan 0 5 11 1 V la 1A S1 2 2 Veatu
6. conductor Group 2 1998 02 01 SIEMENS TLE 4202 B Pin Definitions and Functions Pin No Symbol Function 1 1 Input 1 Non inverting input 1 to be connected to pin 2 and pin 3 according to general rules 2 13 Inverting input 3 Inverting inputs of the two comparators internally connected to reference voltage across 50 kQ typ 1 7 V 3 Q1 Output Q1 Push pull output B DC short circuit proof to ground Integrated free wheel diodes to ground and to supply voltage 4 GND Ground 5 Q2 Output Q2 see pin 3 6 Vs Supply voltage Has to be blocked to ground with a ceramic capacitor of at least 100 nF directly at the pins of the ICs 7 12 Input 2 Non inverting input 2 see pin 1 Semiconductor Group 3 1998 02 01 SIEMENS TLE 4202 B Supply Voltage Vs inputi Output Q1 Power Limiter gii e TLE 4202B and P Temperature Protection dii Output Q2 GND AEB00613 Figure 2 Block Diagram Semiconductor Group 4 1998 02 01 SIEMENS TLE 4202 B Absolute Maximum Ratings To 40 to 130 C Parameter Symbol Limit Values Unit min max Supply voltage Vs 40 V Output current of sink transistors Io 25 A Te lt 85 C Output current of source transistors la internally limited Diode peak currents to Vs Ir 2 5 A to ground Ir 2 5 A Voltage at pins 11 12 I3 V 2 7 0 3 Vs V Voltage at pins Q1

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