FAIRCHILD FDH900/FDLL900 FDH999/FDLL999 handbook
Contents
1. trr Reverse Recovery Time lf 10 mA r 10 mA i RL 100 9 ire 1 0 mA 1 These ratings are limiting values above which the aerviceability of any individual semiconductor device may be impaired NOTES 2 These are steady state limits The factory should be conaulted on applications involving pulsed or low duty cycle operation 3 For product famity characteristic curves refer to Chapter 4 D42. O FOH 200 00 FAIRCHILD SEMICONDUCTOR SAT rey Re OAC STR LURE Y A papaa m m m e p we yT A Schlumberger Company _ 7 o i 3469674 0027337 1 E oeo FDH900 FDLL900 Eaa FDH999 FDLL999 eet ere de tae i eee FAIRCHILD a High Speed Switching Diodes 7 03 09 BV 45V FDA900 35 V FDH999 PACKAGES trr 4 0 ns FDH900 5 0 ns FDH999 FPDH900 DO 35 i FDH999 DO 35 ABSOLUTE MAXIMUM RATINGS Note 1 FDL L900 LL 34 Temperatures 7 FDLL999 LL 34 Storage Temperature Range 65 C to 200 C i e Max Junction Operating Temperature 175 C If you need this device in the Lead Temperature l 260 C SOT package an electical equivalent is available See Power Dissipation Note 2 FDS01200 family npm ipee n e Maximum Total Dissipation at 25 C Ambient 500 mw Linear Derating Factor From 25 C 3 3 mW C j Maximum Voltage and Currents WIV Working Inverse Voltage FDH900 40V FDH999 25 V lo Average Rectified Current i 200 mA IF Continuous Forward Current f 500 mA if Recurrent Peak Forward Current 600 mA if surge Peak Forward Surge Current Pulse Width 1 08 1 0 A Pulse Width 1 0 us 40A ELECTRICAL CHARACTERISTICS 25 C Ambient Temperature untess otherwise noted FOHo00 SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS BV Breakdown Voltage a5 ea IR 5 0 pA iR Reverse Current HA VR 26V nA VR 40V Ve Forward Voltage V iF 10 mA V le 100 mA
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FAIRCHILD FDH900/FDLL900 FDH999/FDLL999 handbook