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EtronTech EM564166 handbook

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1. AC Test Condition e Output load 50pF one TTL gate e Input pulse level 0 4V 2 4V e Timing measurements 0 5 x VDD e tR tF 5ns Preliminary 5 Rev 1 0 May 2001 EM564166 EtronTech un Uf SS AN dm n i a 5 imi EtronTech EM564166 Write Cyclel WE Controlled See Note 4 M o DDD ip 7 Uy 7 Preliminary 7 Rev 1 0 May 2001 EtronTech EM564166 Write Cycle 2 CE Controlled See Note 4 m 00 cem Yz wl a A Preliminary 8 Rev 1 0 May 2001 EtronTech EM564166 Write Cycle3 UB LB Controlled See Note 4 gt W000 SH em O Din See Note 5 VALID DATA IN Note 1 WE remains HIGH for the read cycle 2 If CE goes LOW with or after WE goes LOW the outputs will remain at high impedance 3 If CE goes HIGH coincident with or before WE goes HIGH the outputs will remain at high impedance 4 If OE is HIGH during the write cycle the outputs will remain at high impedance 5 Because UO signals may be in the output state at this time input signals of reverse polarity must not be applied Preliminary 9 Rev 1 0 May 2001 EtronTech EM564166 Data Retention Characteristics Ta 40 C to 85 C Symbol Parameter Min Typ Max Unit Data Retention Supply CE gt VDD 0 2V 10 M DR Voltage VIN gt VoD 0 2V or VIN lt 0 2V VDD 1 0V CE gt Vpp 0 2V Jop Data Retention Current VIN gt Vo
2. AS iH EM 5641664 hv ge EtronTech Features e Single power supply voltage of 2 3V to 3 6V e Power down features using CE e Low power dissipation e Data retention supply voltage 1 0V to 3 6V e Direct TTL compatibility for all input and output e Wide operating temperature range 40 C to 85 C e Standby current VDD 3 6 V IDDs2 Typical Maximum EM564166BC 70 85 1 uA 10 pA EM564166BC 70E 85E 5 uA 80 uA Ordering Information Part Number Speed loss Package Sens 70m wa leese eussanee6c es esns 10 Jas Eusosrospo 70 Tons sos Iess Senger esns sos 6686A Overview EM564166 256K x 16 Low Power SRAM Preliminary Rev 1 0 05 2001 Pin Configuration 48 Ball BGA CSP Top View 1 2 3 4 5 6 M doo CeCe ac c oO DS AMO de OQ a oe E D EE Function Address Inputs Data Inputs Outputs Chip Enable Inputs Output Enable Read Write Control Input Data Byte Control Inputs Ground Power Supply No Connection The EM564166 is a 4 194 304 bit SRAM organized as 262 144 words by 16 bits It is designed with advanced CMOS technology This Device operates from a single 2 3V to 3 6V power supply Advanced circuit technology provides both high speed and low power It is automatically placed in low power mode when chip enable CE is asserted high There are two control inputs CE are used to select the device and for data retention control an
3. d output enable OE provides fast memory access Data byte control pin LB UB provides lower and upper byte access This device is well suited to various microprocessor system applications where high speed low power and battery backup are required And with a guaranteed operating range from 40 C to 85 C the EM564166 can be used in environments exhibiting extreme temperature conditions Etron Technology Inc No 6 Technology Rd V Science Based Industrial Park Hsinchu Taiwan 30077 R O C TEL 886 3 5782345 FAX 886 3 5778671 Etron Technology Inc reserves the right to make changes to its products and specifications without notice EtronTech EM564166 Block Diagram MEMORY CELL ARRAY 2 048X128X16 4 194 304 ROW ADDRESS DECODER DATA INPUT BUFFER SENSE AMP DATA INPUT BUFFER DATA OUTPUT COLUMN ADDRESS DECODER WE O UB O LB4 O OE O CE O POWER DOWN CIRCUIT Preliminary 2 Rev 1 0 May 2001 EtronTech EM564166 Operating Mode Mode CE OE WE LB UB DQ0 DQ7 DQ8 DQ15 L L DOUT DOUT Read L L H HI LU High Z DOUT L H DOUT High Z L L DIN DIN Write L X LJ HL High Z DIN L H DIN High Z L H H xX X Output Deselect High Z High Z L x xX H H H x x x x Standby High Z High Z X XXX X Note X don t care H logic high L logic low Absolute Maximum Ratings Supply vol
4. n 02V or VIN lt 0 2V 0 5 35 uA tepm Chip Deselect to Data Retention Mode Time 0 ns tmpm Recovery Time tRC ns CE Controlled Data Retention Mode Data Retention Mode Note 1 CE gt Vpp 0 2V or UB LB gt Vpp 0 2V Preliminary 10 Rev 1 0 May 2001 EtronTech EM564166 Package Diagrams 48 Ball 6mm x 8mm BGA Units in mm IOP VIEW BOTTOM VIEW PIN 1 CORNER S Gm PIN 1 CORNER 030 0 05 48X 1 2 3 4 5 6 6 5 4 3 2 1 QOODOO OOOlOOO 8 0 0 10 duds NAR MGR I om mico Oo 0 gt 0 52 0 02 0 25 0 05 Preliminary 11 Rev 1 0 May 2001
5. s not 100 tested Preliminary 4 Rev 1 0 May 2001 EtronTech EM564166 AC Characteristics and Operating Conditions Ta 40 C to 85 C Vpp 2 3V to 3 6V Read Cycle EM564166 Symbol Parameter 85 70 Unit Min Max Min Max tRC Read cycle time 85 70 tAA Address access time 8 70 tco1 Chip Enable CE Access Time 85 70 toE Output enable access time 45 35 BA Data Byte Control Access Time 45 35 iz Chip Enable Low to Output in Low Z 10 10 toLZ Output enable Low to Output in Low Z 3 3 hi iBLZ Data Byte Control Low to Output in Low Z 5 5 tHZ Chip Enable High to Output in High Z 35 25 toHZ Output Enable High to Output in High Z 35 25 iBHZ Data Byte Control High to Output in High Z 35 25 toH Output Data Hold Time 10 10 Write Cycle EM564166 Symbol Parameter 85 70 Unit Min Max Min Max twc Write cycle time 85 70 twp Write pulse width 55 55 tcw Chip Enable to end of write 70 60 tgw Data Byte Control to end of Write 70 60 tas Address setup time 0 07 twR Write Recovery time 0 0 i tWHZ WE Low to Output in High Z 35 30 tow WE High to Output in Low Z 5 5 s tDS Data Setup Time 35 30 tDH Data Hold Time 0 0
6. tage Vpp 0 3 to 4 6V Input voltages VIN 0 3 to 4 6V Input and output voltages Vue 05 to VDD Soldering Temperature 10s TSOLDER DC Recommended Operating Conditions Ta 40 C to 85 C Symbol Parameter Min Typ Max Unit VDD Power Supply Voltage 2 3 3 6 VIH Input High Voltage 2 2 Vpp 0 8 V ViL Input Low Voltage 0 309 2 0 6 V VDR Data Retention Supply Voltage 1 0 3 6 V Note 1 Overshoot VDD 2 0V in case of pulse width lt 20ns 2 Undershoot 2 0V in case of pulse width lt 20ns Preliminary 3 Rev 1 0 May 2001 EtronTech EM564166 DC Characteristics Ta 40 C to 85 C Vpp 2 3V to 3 6V Test Conditions Min Typ Max Unit lin OV to Vpp 1 1 pA Input low current E Output low GET Vip Sind Cycle time yop 227V 10 15 Operating current Jour 0mA mA Other Input Vjy VIL Vpp 23V B 7 12 Cycle time 1us 5 Ibps1 CE VIH 0 5 mA Vpp 3 6V 1 10 CE gt Vpp 0 2V Standby current Ippse 70 85 Vpp 27V 08 5 pA Vpp 2 3 V 0 5 3 70E 85E Vpp 3 6 V 5 80 Notes Typical value are measured at Ta 25 C Capacitance Ta 25 C f 1 MHz Symbol win Typ max Unit Test Conatons on ofo vno Cour 10 pF Vour 6MD Notes This parameter is periodically sampled and i

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