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SanRex QCA75AA100 DATA SHEET

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1. 5 100 pv f TRANSISTOR MODULE QCA75AA100 ELI EI QCA75AA100 is a dual Darlington power transistor module which has series connected high speed high power Darlington transistors Each transistor has a reverse paralleled fast recovery diode The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction e c 75A VcEx 1000V ow saturation voltage for higher efficiency e High DC current gain hFE e Isolated mounting base Applications Motor Control VVVF AC DC Servo UPS ES Switching Power Supply Ultrasonic Application Ez Ratings Item UL E76102 M B2 E1C2 Ei B1 Unit mm Conditions Ratings 25 75 100 Collector Base Voltage 1000 Collector Emitter Voltage 1000 Emitter Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature 40 50 Storage Temperature 40 25 Isolation Voltage A C 1minute 2500 lt 1 IS gt gt gt lt lt lt Mounting Mounting M6 Recommended Value 2 5 3 9 25 40 4 7 48 Z 3 Torque Terminal M5 Recommended Value 1 5 2 5 15 25 2 7 28 Mass lillElectrical Characteristics Symbol Item Typical Va
2. 10 2 Collector Current Ic A Collector Current Ic A Forward Bias Safe Operating Area 8 4 C 17 2 ELLE LER EET TI 1 150 2 E zs ET t X gt gt O O g o o 9 O O TE 5 10 2 5 10 2 5 10 0 250 500 750 1000 1250 Collector Emitter Voltage Voce V Collector Emitter Voltage Voe V T E Current Derating Factor Forward Voltage of Free Wheeling Diode o o 10 o 3 2 9 o Tj 25C LL 0 Maximum D o 2 E E g 5 2 10 O 5 Switching Time ton tf ts us 50 100 150 Case Temperature C Collector Current Vs Switching Time ts Vcc 600V 1 182 1 5 ton Tj225C Typical 25 50 75 Collector Current Ic A SANSHA ELECTRIC Transient Thermal Impedance 6j c C W 1 0 2 5 Emitter Collector Voltage Veco V Maximum Transient Thermal Impedance Characteristics 10 2 5 Time t sec 12 TRANSISTOR MODULE QCA75AA120 ELI EI QCA75AA120 is a dual Darlington power transistor module which has series connected high speed high power Darlington transistors Each transistor has a reverse paralleled fast recovery diode The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction 75 VcEx 1200V ow
3. saturation voltage for higher efficiency e High DC current gain hFE e Isolated mounting base Applications Motor Control VVVF AC DC Servo UPS Switching Power Supply Ultrasonic Application E2 Ratings Item UL E76102 M B2 E1C2 E1 B1 Unit mm Conditions Tj 25 C Ratings QCA75AA120 Collector Base Voltage 1200 Collector Emitter Voltage 1200 Emitter Base Voltage Collector Current 10 15 Reverse Collector Current Base Current Total power dissipation Junction Temperature 40 150 Storage Temperature 40 H125 Isolation Voltage A C 1minute lt 1 IS gt gt gt lt lt lt 2500 Mounting Mounting M6 Recommended Value 2 5 3 9 25 40 4 7 48 2 3 Torque Terminal M5 Recommended Value 1 5 2 5 15 25 2 7 28 Mass lillElectrical Characteristics Symbol Item Typical Value Conditions 250 Ratings Min Max IcBo Collector Cut off Current VcB 1200V 1 0 Emitter Cut off Current VEB 10V 300 VcEX sus Collector Emitter Sustaning Voltage Ic 15A IB2 3A DC Current Gain Ic 75A Vce 5V VCE sat Collector Emitter Saturation Voltage Ic 75A 18 1 5 VBE sat Base Emitter Saturation Voltage 75 1
4. B 1 5A ton On Time Switching Time Storage Time Fall Time Vcc 600V 75A 1 1 5 Ig2 1 5A Collector Emitter Reverse Voltage c 75A Thermal Impedance junction to case Transistor part Diode part SanRex QCA75AA120 KZ 5 D C Current Gain Vce 5V VcE 2 8V DC Current Gain hre 10 2 5 10 2 5 10 2 Collector Current Ic A Forward Bias Safe Operating Area Collector Current Ic A Tc 25C Non Repetitive 10 2 5 10 2 Collector Emitter Voltage Voe V Collector Current Derating Factor ps 50 D B 15 0 50 100 Case Temperature 0 Collector Current Vs Switching Time Typical lg 1 5A 1 5A Vcc 600V Tj225C 0 10 20 30 40 50 60 70 80 Collector Current Ic A Switching Time ton tf ts s Collector Emitter Voltage Voe V Base Emitter Voltage Vese V aturation Characteristics 10 10 2 5 10 2 5 10 2 Collector Current Ic A Reverse Bias Safe O
5. lue Conditions 250 Ratings Max IcBo Collector Cut off Current VcB 1000V 1 0 Emitter Cut off Current VEB 7V 200 VCEX SUS Collector Emitter Sustaning Voltage Ic 15A 182 4A hFE DC Current Gain Ilc 75A Vce 2 8V 75 Vce 5V VCE sat Collector Emitter Saturation Voltage Ic 75A 1B 1 5A VBE sat Base Emitter Saturation Voltage Ic 75A IB 1 5A ton On Time Switching Time Storage Time Fall Time Vcc 600V 75A IB1 1 5A Ig2 1 5A Collector Emitter Reverse Voltage c 75A Thermal Impedance junction to case Transistor part Diode part SanRex QCA75AA100 E ZI ZI D C Current Saturation Characteristics p Vce 5v c MT NL 8v 2 Typical 10 TEER E gt gt amp Ou C 5 HC ESOS N O8 v LE M rp SX Nu 8 5 o ALL 1 e 59 5 5 5 s d TL F EG 2 i o m s uE 1 LLL o MH 1 5 Jz A D JL 5 O M 10 2 5 10 2 10 2 5 10 2 5 10 2
6. perating Area 160 N Collector Current Ic A e 0 200 400 600 800 1000 Collector Emitter Voltage Voe V 1200 1400 Forward Voltage of Free Wheeling Diode Tj 25C Tj 150C Typical N Collector Reverse Current Ic A B as 0 0 5 1 0 1 5 2 0 Emitter Collector Voltage Veco V Maximum Transient Thermal Impedance Characteristics 00msec 10sec Transient Thermal Impedance 6j c C W 10 2 5 10 2 5 10 Time t sec SANSHA ELECTRIC

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