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MTE NTE5620 TRIAC 800VRM 8A TO220

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1. NTE5620 NTE ELECTRONICS INC 44 FARRAND STREET BLOOMFIELD NJ 07003 973 748 5089 NTE5620 TRIAC 800Vpy 8A TO220 Full Pack The NTE5620 TRIAC is designed primarily for full wave AC control applications such as light dim mers heater controls motor controls and power supplies or wherever full wave silicon gate con trolled solid state devices are needed TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering Features e Blocking Voltage 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small Rugged TO220 Full Pack for Low Thermal Resistance High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings Peak Repetitive Off State Voltage VDRM Ty 40 to 125 C 1 2 Sine Wave 50 to 60Hz Gate Open Note 1 800V On State Current RMS IT RMS Tc 80 C Full Cycle Sine Wave 50 to 60Hz Note 2 0 8A Peak Non Repetitive Surge Current ITSM One Full Cycle 60Hz Tc 125 C Preceded and followed by rated current 100A Peak Gate Power Tc 80 C Pulse Width 2us PGM esses 16W Average Gate Power Tc 80 C t 8 3ms PGAV esi Ao AP aeo n 350mW Peak Gate Current Pulse Width 2us IGM nana aaa aan aaa acc ai ii 4A RMS Isolation Voltage TA 25 C Relative Humidity l
2. ical Rate of Rise of Off State Voltage Rated VDRM Exponential Waveform Tj 125 C Gate Open Critical Rate of Rise of Commutation Voltage Rated VDpRM ITIRMS 6A Commutating di dt 4 3A ms Gate Unenergized Tc 80 C Gate 408 10 36 Max 185 4 7 280 7 11 110 2 79 100 2 54 L 105 2 66
3. t 20 Viso 2212211 1500V Operating Junction Temperature Range Tj lt aaa aaa aaaaiiii 40 to 125 C Storage Temperature Range Tstg pp 40 to 150 C Thermal Resistance Junction Cto Case RihJc pp 2 2 C W Typical Thermal Resistance Case to Sink Rios ke 2 2 C W Thermal Resistance Junction to Ambient RihJA pp 60 C W Note 1 Ratings apply for open gate conditions Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage Note 2 The case temperature reference point for all Tc measurements is a point on the center lead of the package as close as possible to the plastic body Electrical Characteristics Tc 25 C unless otherwise specified Characteristics Peak Blocking Current Either Direction Rated VDRM TJ 4125 C Gate Open Peak On State Voltage Either Direction ITM 11 3A Peak Pulse Width 1 to 2ms Duty Cycle lt 2 Peak Gate Trigger Current Main Terminal Voltage 12Vdc R 100 Ohms MT2 G MT2 G MT2 G MT2 G Peak Gate Trigger Voltage Main Terminal Voltage 12Vdc R 100 Ohms MT2 G MT2 G MT2 G MT2 G Main Terminal Voltage Rated VDRM RL 10kQ Ty 4125 C MT2 G MT2 G MT2 G MT2 G Holding Current Either Direction Main Terminal Voltage 24Vdc Gate Open IT 200mA Crit

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