ALPHA OMEGA AOL1420 N-Channel Enhancement Mode Field Effect Transistor handbook
Contents
1. Ph WWW 2 CA WALA PAK R 41662 gl XA 26 XYI 0755 83278916 83278919 010 62632888 626368882. 11401 hv S amp SEMICONDUCTOR 3 N Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to Vps V 30V provide excellent Rps oy low gate charge and low 85A Vas 7 10V gate resistance This device is ideally suited for use Rostov lt 3 7 10V as a low side switch in CPU core power conversion Roson lt 5 5mO Ves 4 5V Standard Product AOL1420 is Pb free meets ROHS amp Sony 259 specifications AOL1420L is a Green Product ordering option AOL1420 and AOL1420L are electrically identical Ultra SO 8 Top View Fits SOIC8 footprint Bottom tab connected to drain Continuous Drain Current P9 Repetitive avalanche energy L 0 1mH EAR Power Dissipation 100 Thermal Characteristics Parameter Maximum Junction to Ambient Maximum Junction to Ambient Steady State Alpha amp Omega Semiconductor Ltd AOL1420 Electrical Characteristics 25 unless otherwise noted symbol Parameter Conditions Units STATIC PARAMETERS Drain Source Breakdown Voltage 25 v cl cM ESSEN L7 10 Vos Vas 72500 10 8 A Ves 10V 20 29 37 Static Drain Source On Resistance 125 44 55 Ves 4 5V 20
3. Forward Transconductance Vos 5V lx 20A 1A Vas 0V DYNAMIC PARAMETERS 3200 3840 Cos Output Capacitance Vas 0V Vos 15V fz1mHz f 590 pr oF Gaeresistane Vev vov m 1054 07 SWITCHING PARAMETERS Qa Gate Drain Charge tr Body Diode Reverse Recovery Time 20 dl dt 100A us Body Diode Reverse Recovery Charge 20A dl dt 100A us Jre A The value of R qJA is measured with the device in a still air environment with T A 25 C B The power dissipation PD is based on TJ MAX 175 C using junction to case thermal resistance and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used C Repetitive rating pulse width limited by junction temperature 175 D The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient E The static characteristics in Figures 1 to 6 are obtained using 300 ms pulses duty cycle 0 596 max F These curves are based on the junction to case thermal impedence which is measured with the device mounted to a large heatsink assuming a maximum junction temperature of 175 G The maximum current rating is limited by bond wires 0 August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED AOS DO
4. ES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha amp Omega Semiconductor Ltd AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS I A Ves Volts Vos Volts os Figure 2 Transfer Characteristics Fig 1 On Region Characteristics 8 1 6 7 8 814 6 E x z 5 6 12 D 2 4 1 3 2 0 8 0 10 20 30 40 50 60 0 25 50 75 100 15 150 175 1 Temperature C Figure 3 On Resistance vs Drain Current and Figure 4 On Resistance vs Junction Gate Voltage Temperature 8 1 0E 02 1 0E 01 1 0 00 1 0 01 2 4 E g 1 0E 02 x 1 0E 03 2 1 0E 04 0 1 0E 05 2 4 6 8 10 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Ves Volts Vsp Volts Figure 5 On Resistance vs Gate Source Voltage Figure 6 Body Diode Characteristics Alpha amp Omega Semiconductor Ltd AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 4000 8 8 3000 o z 8 E 2000 o 1000 0 Q nC Vps Volts Figure 7 Gate Charge Characteristics Figure 8 Capacitance Characteristics 1000 175 25 100 10 5 N Nani ANNAN pij i man 0 0001 0 001 0 01 0 1 1 10 100 Vps Volts Pulse Width s
5. Figure 9 Maximum Forward Biased Safe Figure 10 Single Pulse Power Rating Junction to Operating Area Note F Ambient Note F DST fT n descending order 2 D 0 5 0 3 0 1 0 05 0 02 0 01 single pulse Rosa 1 5 CW Sc 5 BB 28 9 0 00001 0 0001 0 001 0 01 0 1 1 10 100 Pulse Width s Figure 11 Normalized Maximum Transient Thermal Impedance Note F Alpha amp Omega Semiconductor Ltd AOL1420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 120 5 Tase G III 100 100 5 LA ii E P MIN WMH i lt 60 60 M I 8 40 BV N 5 40 SLES lt 20 20 0 0 0 00001 0 0001 0 001 0 01 Time in avalanche t s Tease C Figure 12 Single Pulse Avalanche capability Figure 13 Power De rating Note B 100 100 2 g 5 5 5 40 amp 40 5 20 20 ul ll 5 0 0 25 50 75 100 125 150 175 0 01 0 1 1 10 1000 Tease Pulse Width s Figure 14 Current De rating Note B Figure 15 Single Pulse Power Rating Junction to Ambient Note H Thermal Resistance Zsa Normalized Transient 0 00001 0 0001 0 001 0 01 0 1 1 10 100 1000 Pulse Width s Figure 16 Normalized Maximum Transient Thermal Impedance Note H Alpha amp Omega Semiconductor Ltd WWW ZFA CN
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ALPHA OMEGA AOL1420 N Channel Enhancement Mode Field Effect Transistor handbook