MOTOROLA MMBF2201NT1 handbook
Contents
1. On Resistance versus Drain Current Voltage 1 0 45 Vas 0V _ w F 1 mHz amp 35 T o S 39 5 S faai 2 25 oO z 20 Cigs 5 0 01 E 15 7 N OSS D 10 5 Crss 0 001 0 0 01 02 03 04 05 06 07 08 09 10 0 2 4 6 8 10 12 14 16 18 20 Vgp SOURCE DRAIN FORWARD VOLTAGE VOLTS Vps DRAIN SOURCE VOLTAGE VOLTS Figure 5 Source Drain Forward Voltage Figure 6 Capacitance Variation 1 0 0 9 wD 0 8 25 g 55 z 07 150 Z 06 oc T 05 O Z 04 s a 0 3 a 02 0 1 0 0 05 10 15 20 25 30 35 40 45 VGs GATE SOURCE VOLTAGE VOLTS Figure 7 Transfer Characteristics Motorola Small Signal Transistors FETs and Diodes Device Data 3 MMBF2201NT1 INFORMATION FOR USING THE SC 70 SOT 323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package With the correct pad geometry the packages will self align when subjected to a solder reflow process 0 025 m 65 0 075 i 0 035 0 9 0 028 0 inches mm SC 70 SOT 323 SC 70 SOT 323 POWER DISSIPATION The power dissipation of the SC 70 SOT 323 is a function of the drain pad size This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation Power dissipati2. 30 0 40 0 047 0 055 1 20 1 40 0 000 0 004 0 00 0 10 0 004 0 010 0 10 0 25 0 017 REF 0 425 REF 0 026 BSC 0 650 BSC 0 028 REF 0 700 REF 0 031 0 039 0 80 1 00 0 079 0 087 2 00 2 20 0 012 0 016 0 30 0 40 pzd lt D Zj fA jeooo w gt 0 05 0 002 A STYLE 7 PIN 1 DRAIN 2 GATE 3 COLLECTOR CASE 419 02 SC 70 SOT 323 ISSUE E Motorola Small Signal Transistors FETs and Diodes Device Data 5 MMBF2201NT1 Motorola reserves the right to make changes without further notice to any products herein Motorola makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does Motorola assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation consequential or incidental damages Typical parameters can and do vary in different applications All operating parameters including Typicals must be validated for each customer application by customer s technical experts Motorola does not convey any license under its patent rights nor the rights of others Motorola products are not designed intended or authorized for use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other
3. Order this document AMOTORONAL D EMA SEMICONDUCTOR TECHNICAL DATA by MMBF2201NT1 D GREEN JL INE MMBF2201NT1 Motorola Preferred Device Low rDS on Small Signal MOSFETs TMOS Single N Channel oe AEE Field Effect Transistors LY ENE ANG MENT MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energy con rDS on 1 0 OHM serving traits nn in These miniature surface mount MOSFETs utilize Motorola s High TMOS Cell Density HDTMOS process Low rDS on assures minimal power loss and conserves energy making this device ideal for use 3 DRAIN in small power management circuitry Typical applications are N dc dc converters power management in portable and battery powered products such as computers printers PCMCIA cards CASE 419 02 Style 7 cellular and cordless telephones SC 70 SOT 323 e Low rpS on Provides Higher Efficiency and Extends Battery Life 4 e Miniature SC 70 SOT 323 Surface Mount Package Saves GATE Board Space 2 SOURCE MAXIMUM RATINGS Ty 25 C unless otherwise noted Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Continuous T 25 C Continuous Ta 70 C Pulsed Drain Current tp lt 10 us Total Power Dissipation Ta 25 C 1 Derate above 25 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient DEVICE MARKING N1 1 Mounted on G10 FR4 glass epox
4. T E A E 1 Pulse Test Pulse Width lt 300 us Duty Cycle lt 2 2 Switching characteristics are independent of operating junction temperature TYPICAL CHARACTERISTICS 1 0 1 6 0 9 1 4 i VGS 4V_ ean Y 0 8 2 s i 07 roy Veg 45V a O t m 06 wt ce Vas 3 5V Z Daim 5 05 H 08 Ves 10V 4 Z 04 a ae T 06 Ip 300 mA 4 A 0 3 Ves 3 V _ fe a D 0 4 02 k2 0 1 Ves 2 5V 0 2 0 0 0 1 2 3 4 5 6 7 8 9 10 60 40 20 0 20 40 60 80 100 120 140 160 Vps DRAIN SOURCE VOLTAGE VOLTS TEMPERATURE C Figure 1 Typical Drain Characteristics Figure 2 On Resistance versus Temperature 2 Motorola Small Signal Transistors FETs and Diodes Device Data MMBF2201NT1 TYPICAL CHARACTERISTICS 10 1 2 T 8 D 30m 10 2 S 5 Ww ws 08 9 6 Z lt A D 0 6 D 2 Ves 10V ira 4 a a A 2 x o9 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 GATE SOURCE VOLTAGE VOLTS Ip DRAIN CURRENT AMPS Figure 3 On Resistance versus Gate Source Figure 4
5. application in which the failure of the Motorola product could create a situation where personal injury or death may occur Should Buyer purchase or use Motorola products for any such unintended or unauthorized application Buyer shall indemnify and hold Motorola and its officers employees subsidiaries affiliates and distributors harmless against all claims costs damages and expenses and reasonable attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized use even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part Motorola and 4 are registered trademarks of Motorola Inc Motorola Inc is an Equal Opportunity Affirmative Action Employer How to reach us USA EUROPE Motorola Literature Distribution JAPAN Nippon Motorola Ltd Tatsumi SPD JLDC Toshikatsu Otsuki P O Box 20912 Phoenix Arizona 85036 1 800 441 2447 6F Seibu Butsuryu Center 3 14 2 Tatsumi Koto Ku Tokyo 135 Japan 03 3521 8315 MFAX RMFAX0 email sps mot com TOUCHTONE 602 244 6609 HONG KONG Motorola Semiconductors H K Ltd 8B Tai Ping Industrial Park INTERNET http Design NET com 51 Ting Kok Road Tai Po N T Hong Kong 852 26629298 AA MOTOROLA Q MMBF2201NT1 D
6. ld always be observed in order to minimize the thermal stress to which the devices are subjected e Always preheat the device e The delta temperature between the preheat and soldering should be 100 C or less e When preheating and soldering the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet When using infrared heating with the reflow soldering method the difference shall be a maximum of 10 C e The soldering temperature and time shall not exceed 260 C for more than 10 seconds e When shifting from preheating to soldering the maximum temperature gradient shall be 5 C or less e After soldering has been completed the device should be allowed to cool naturally for at least three minutes Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress e Mechanical stress or shock should not be applied during cooling Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device 4 Motorola Small Signal Transistors FETs and Diodes Device Data MMBF2201NT1 PACKAGE DIMENSIONS NOTES 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH INCHES MILLIMETERS MIN MAX MIN MAX 0 071 0 087 1 80 2 20 0 045 0 053 1 15 1 35 0 035 0 049 0 90 1 25 0 012 0 016 0
7. on for a surface mount device is determined by TJ max the maximum rated junction temperature of the die RgJA the thermal resistance from the device junction to ambient and the operating temperature Ta Using the values provided on the data sheet for the SC 70 package Pp can be calculated as follows TJ max TA R JA Pp The values for the equation are found in the maximum ratings table on the data sheet Substituting these values into the equation for an ambient temperature Ta of 25 C one can calculate the power dissipation of the device which in this case is 150 milliwatts 150 C 25 C 833 C W 150 milliwatts Pp The 833 C W for the SC 70 SOT 323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts There are other alternatives to achieving higher power dissipation from the SC 70 SOT 323 package Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad Using a board material such as Thermal Clad an aluminum core board the power dissipation can be doubled using the same footprint SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device When the entire device is heated to a high temperature failure to complete soldering within a short time could result in device failure Therefore the following items shou
8. y board using minimum recommended footprint ORDERING INFORMATION Device Tape Width Quantity 8 mm embossed tape MMBF2201NT3 8 mm embossed tape 10 000 GreenLine is a trademark of Motorola Inc HDTMOS is a trademark of Motorola Inc TMOS is a registered trademark of Motorola Inc Thermal Clad is a registered trademark of the Berquist Company Preferred devices are Motorola recommended choices for future use and best overall value REV 1 AA MOTOROLA Motorola Inc 1995 MMBF2201NT1 ELECTRICAL CHARACTERISTICS T4 25 C unless otherwise noted haste Sm e OFF CHARACTERISTICS Drain to Source Breakdown Voltage V BR DSS 20 Vdc VGs 0 Vac Ip 10 uA Zero Gate Voltage Drain Current IDSS uAdc Vps 16 Vdc VGs 0 Vdc 1 0 Vps 16 Vdc Vag 0 Vdc Ty 125 C 10 Gate Body Leakage Current VGs 20 Vdc Vps 0 IGSS 00 nmd ON CHARACTERISTICS 1 Gate Threshold Voltage Vps VGs Ip 250 pAdo Static Drain to Source On Resistance VGs 10 Vdc Ip 300 mAdc Vas 4 5 Vdc Ip 100 mAdc Forward Transconductance Vps 10 Vdc Ip 200 mAdc DYNAMIC CHARACTERISTICS roncar J wssn Oe PT ST oupucamcines oss os a vawierowesiree a es Pe SWITCHING CHARACTERISTICS 2 Pise dime VDD 15 Vdc Ip 300made t 25 Gaecaveseeroes OT A SOURCE DRAIN DIODE CHARACTERISTICS coninmiscues CdS A A T SA e E A E e E
Download Pdf Manuals
Related Search
MOTOROLA MMBF2201NT1 handbook