TQS TGA8349-SCC Gain Block Amplifier
Contents
1. MECHANICAL DRAWING 0 3120 0 4101 3 2283 0122 0161 1270 2 2860 0900 2 1117 0831 1 6306 0641 1 4822 5 0583 1 0331 0406 U A os E 0 5373 5 A LH 0215 gl 0 2395 a o IE gl 0 2386 0094 UU Y TDG Y Y NI 0093 o IL 0 1681 2 9438 3 4290 0066 1158 1350 0 1295 3 2606 0050 1283 Units Millimeters inches Thickness 0 1016 0 004 reference only Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance 0 0508 0 002 Bond pad 1 RF Input 0 152 x 0 203 0 006 x 0 008 Bond pad 2 Vera 0 102 x 0 152 0 004 x 0 006 Bond pad 3 Vp 0 076 x 0 152 0 003 x 0 006 Bond pad 4 V 0 419 x 0 152 0 016 x 0 006 Bond pad 5 RF Output 0 254 x 0 330 0 010 x 0 013 Bond pad 6 V7 0 152 x 0 152 0 006 x 0 006 Bond pad 7 Vaux 0 127 x 0 152 0 005 x 0 006 7 TriQuint Semiconductor Inc e Texas Facilities e 972 995 8465 e www triquint com 72. E 12 O A sp a o a a a0 n 8 T E D 4 O 14 Frequency GHZ 8 Vt 8V S Vera 1 5 V It 80 mA 6 Ta 25 C ao Ss L 5 o 4 LL o mn 3 3 Z 2 1 O 14 Frequency GHz 20 Vt 8V Vera 1 5 V I 80 mA o 16 Ta 25 C E co E 12 o o rai 8 J Q 2 gt O 4 o Frequency GHz TriQuint Semiconductor Inc e Texas Facilities e 972 995 8465 e www triquint com TYPICAL RETURN LOSS ABSOLUTE MAXIMUM RATINGS TGA8349 SCC o v 8V Vera 1 5 V 1 80 mA 10 T 25 C Return Loss dB os put 50 Output O 2 4 6 8 10 12 14 Positive supply voltage V ccccseeeeeccceccceeseeceeecceseeseeceeeeesaaeeseeeeeseessaeseeeceeessseeaeeeeeeessesaaeeeeeeesssaaaeeeeeeees 13 V Positive supply voltage range with respect to negative supply voltage Vt V7 isa OVto 13V Positive supply voltage range with respect to gain control voltage Vota V iii OVto 13V Negative supply voltage range Voj sescccececucacecatesececucacecusncecuecescueveccadadscacadactneseseseasesesoaearananseateveye 5Vto0V Gain control voltage range Vert ii e e ei 5Vto4V Positive supply current It cccccccnnnnnnnnnannnnnnnonononnnnnnnnnnonnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnonnnnnnaninnnns 144 ma Power dissipation Pp at or below 25 C base plate temperatur e erra 2 6 W Input continuous waye Power Ply cisccsscscsccanencacasscceasacgcasaccdaceescdaanesancaascaoascansbabanqagnanq
3. 0 08 0 08 0 07 0 09 0 13 0 16 0 15 0 10 0 10 Su Sa ANG MAG 115 3 32 92 3 34 26 3 36 28 3 40 72 3 46 122 3 51 165 3 52 139 3 53 87 3 51 12 3 48 74 3 48 112 3 48 142 3 49 167 3 52 167 3 51 150 3 51 141 3 51 163 3 52 166 3 54 162 3 58 167 3 63 177 3 63 167 3 68 156 3 68 149 3 68 148 3 67 160 3 65 174 3 63 168 3 57 151 3 46 131 3 36 126 3 31 160 3 13 V 8 V Vera 1 5 V It 80 mA T 25 C Sy ANG MAG 173 0 001 155 0 003 130 0 005 106 0 008 80 0 011 54 0 013 28 0 015 2 0 017 24 0 019 50 0 021 76 0 024 101 0 026 127 0 029 154 0 032 180 0 035 154 0 037 127 0 039 100 0 041 73 0 043 46 0 045 18 0 047 11 0 049 39 0 054 69 0 057 99 0 061 129 0 066 160 0 069 168 0 072 135 0 072 101 0 072 67 0 070 30 0 071 10 0 069 ANG 85 MAG 0 12 0 12 0 11 0 09 0 05 0 02 0 03 0 05 0 07 0 07 0 06 0 05 0 03 0 01 0 04 0 07 0 10 0 11 0 10 0 07 0 04 0 07 0 12 0 17 0 18 0 16 0 11 0 09 0 16 0 23 0 25 0 19 0 16 GAIN dB 10 4 10 5 10 5 10 6 10 8 10 9 10 9 10 9 10 9 10 8 10 8 10 8 10 9 10 9 10 9 10 9 10 9 10 9 11 0 11 1 11 2 11 2 11 3 113 11 3 11 3 11 3 11 2 11 0 10 8 10 5 10 4 9 9 Reference planes for S parameter data include bond wires as specified in the Recommended Assembly Diagram TriQuint Semiconductor Inc e Texas Facilities e 972 995 8465 e www triquint com TGA8349 SCC
4. RF CHARACTERISTICS PARAMETER TEST CONDITIONS TYP UNIT Gp Small signal power gain f DC to 14 GHz 11 dB SWR in Input standing wave ratio f DC to 14 GHz 1 2 1 SWR out Output standing wave ratio f DC to 14 GHz 1 3 1 Pigs Output power at 1 dB gain compression f 7 GHz dBm NF Noise figure f 7 GHz 3 dB fo 1 GHz 51 Output third harmonic at Pin 2 dBm fo 3 GHz 47 dBc fo 5 GHz 48 fo 1 GHz 26 Output second harmonic at Pin 2 dBm fo 3 GHz 27 dBc fo 5 GHz 28 V 8V Ver 1 5 V I 80 mA T 25 C unless otherwise noted Unit dBc applies to decibels with r espect to the carrier or fundamental frequency fe DC CHARACTERISTICS PARAMETER TEST CONDITIONS MIN MAX UNIT loss Total zero gate voltage drain current at saturation Ms 0 5 V to 3 5 V 131 395 mA Ves OV Ta 25 C Vos for loss is the drain voltage between 0 5 V and 3 5 V at which drain current is highest at DC autopr obe THERMAL DATA PARAMETER TEST CONDITIONS FET MMIC UNIT R jc Thermal resistance V 8V V psen 6 18 V loren 5 mA channel 79 6 C 311 4 34 6 channel to backside Base 70 C Vosen 5 08 V lore 8 mA channel 82 8 C 314 0 35 0 C W Vos rer 4 36 V lo ser 10 mA channel 83 8 C 315 7 35 2 PARAMETER TEST CONDITIONS R res UNIT R res Thermal resistance of drain Vres 1 70 V lommic 45 mA Base 70 C R jo 89 5 C W 76 8 C W termination resistor 37 7 Vres 2 71 V lomme 72 mA Base 70 C R jc 89 7 C W 87 5 Vres 3 39 V l
5. 258 TGA83444 3 RS AO NANO SEMICONDUCTOR INC U I TGA8349 SCC Gain Block Amplifier 83 4 DC to 14 GHz Frequency Range 1 2 1 Input SWR 1 3 1 Output SWR 11 dB Small Signal Gain 16 dBm Output Power at 1 dB Gain Compression at Midband 3 1 dB Noise Figure at Midband 3 4290 x 2 2860 x 0 101 mm 0 135 x 0 090 x 0 004 in PHOTO ENLARGEMENT DESCRIPTION The TriQuint TGA8349 SCC is a GaAs monolithic low noise distributed amplifier designed for use as a multi octave general purpose gain block Nine 122 um gate width FETs provide 11 dB nominal gain and 3 1 dB noise figure from DC to 14 GHz Typical power output is 16 dBm at 1 dB gain compression Typical input SWR is 1 2 1 and output SWR is 1 3 1 Ground is provided to the circuitry through vias to the backside metallization The DC to 14 GHz frequency range dual gate AGC control and gain flatness characteristics make the TGA8349 SCC suitable for many system applications including fiber optic The TGA8349 SCC is supplied in chip form and is engineered for high volume automated assembly All metal surfaces are gold plated to be compatible with ther mocompression and thermosonic wire bonding processes TriQuint Semiconductor Inc e Texas Facilities e 972 995 8465 e www triquint com TYPICAL SMALL SIGNAL POWER GAIN TYPICAL NOISE FIGURE TYPICAL OUTPUT POWER Pas TGA8349 SCC 20 Vt 8V Vera 1 5 V I 80 mA _ 16 Ta 25 C m E
6. agansecunananabananasans 23 dBm Operating channel temperature Toy cceccsseccssccesccnsccneccaecceecceeceseceseeeeees seecseeeseeeseesaeeseeseteoeteoenes 150 C Mounting temperature 30 Sec Ty csi 320 C Storage temperature range Terg simi rica nia 65 to 150 C Ratings over channel temperature range Teu unless otherwise noted Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device These are stress ratings only and functional operation of the device at these or any oth er conditions beyond those indicated under RF Characteristics is not implied Exposure to absolute maximum rated conditions for extended periods may affect device reliability For operation above 25 C base plate temperature derate linearly at the rate of 5 5 mW 5C Operating channel temperature directly affects the device MTTF For maximum life it is recommended that channel temperature be maintained at the lowest possible level TriQuint Semiconductor Inc 3 e Texas Facilities e 972 995 8465 e www triquint com 3 TYPICAL S PARAMETERS TGA8349 SCC Frequency GHz 0 1 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 5 6 0 6 5 7 0 7 5 8 0 8 5 9 0 9 5 10 0 10 5 11 0 11 5 12 0 125 13 0 135 14 0 14 5 15 0 15 5 16 0 MAG 0 02 0 02 0 02 0 03 0 02 0 02 0 01 0 01 0 01 0 01 0 02 0 03 0 04 0 06 0 05 0 05 0 04 0 02 0 03 0 05 0 07 0 08 0 09 0 09
7. o mmic 90 mA Base 70 C R j 90 2 C W 97 5 MMIC mounted with 38 m AuSn solder to carrier Ip mmicy 9 X Ipet TriQuint Semiconductor Inc e Texas Facilities e 972 995 8465 e www triquint com TGA8349 SCC EQUIVALENT SCHEMATIC R R Vo 2 80 Sana Do O RF Output R 122um 9 places 3 60 60 L Vera O F SF SF SF SF SK SRE RE 1 9KQ 1 9KQ RF Input O o V R S j Vaux TaN resistors R and R have a tolerance of 16 GaAs resistors Ro Ra Rs and Rg have a tolerance of 30 RECOMMENDED ASSEMBLY DIAGRAM Bias conductor CTRL 1000pF aN RF Output RF Input 1000pF 1000pF RF connections Thermocompression bond using two 1 mil diameter 20 to 30 mil length gold bond wires at RF Input and at RF Output for optimum RF performance Close placement of this capacitor is critical for performance TriQuint Semiconductor Inc e Texas Facilities e 972 995 8465 e www triquint com TGA8349 SCC
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TQS TGA8349 SCC Gain Block Amplifier