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GSI TECHNOLOGY GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM

1. Top view A14 1 28 Vip M2 2 27 WE A7 3 26 A13 A6 4 25 A8 bs e 28 Ato 27 CE A5 5 24 A9 A9 3 26 Das AB 4 A3 7 2 OE WE 6 28 pin 23 DQ5 n 300 mil 2 Vpp 7 22 DQ4 2 8 ap E 8 8x 134 TSOP 21 Vss M 9 SOJ 20 CE A12 9 20 DQ3 AT 10 19 Daz A0 10 9 DQ8 A6 11 18 Dat A5 12 DQ1 11 18 DQ7 M 13 i i DQ2 12 17 Das E 15 A2 DQ3 13 16 DQ5 Vsg 14 15 DQ4 Rev 1 11 11 2004 1 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra OLOGY GS70328SJ TS Block Diagram A0 e e Row Memory Array Decoder e Address Input e Buffer e e Column A14 e Decoder CE eee WE DS Control e 1 0 Buffer eee DQ1 DQe Truth Table CE OE WE DQ1 to DQs Vp Current H X X Not Selected ISB1 ISB2 L L H Read L X L Write IDD L H H High Z X H or L Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD 0 5 to 4 6 V 0 5 to Vpp 0 5 Input Volt V V oes lt 4 6 V max 0 5 to Vpp 0 5 tput Volt V V Suput Voltage e lt 4 6 V max Allowable power dissipation PD 0 7 W Storage temperature TsTG 55 to 150 ec Note Permanent device damage may occur if Absolute Maximum Ratings are exceeded
2. y 0004 0 10 0 10 0 10 Notes 1 Dimension D amp E do not include interlead flash 2 Dimension B1 does not include dambar protrusion intrusion 3 Controlling dimension inches a Rev 1 11 11 2004 8 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra OLOGY GS70328SJ TS 28 Pin TSOP I 8 mm x 13 4 mm Dimension in inch Dimension in mm K E gt 28 BRRRRRRRRRRRRR Symbol min nom max min nom max A 0 047 1 20 A1 0 002 0 006 0 05 0 15 A2 0 035 0 040 0 041 0 90 1 00 1 05 B 0 007 0 008 0 011 0 17 0 20 0 27 D 0465 11 8 Hp 528 13 4 C 0 004 0 006 0 008 0 10 0 15 0 21 E 0315 8 00 e 0022 0 55 L 0 020 0 024 0 028 0 50 0 60 0 70 L1 0 024 0 032 0 040 0 60 0 80 1 00 y 0003 0 08 e 09 Ls 5 0 50 Notes Detail A 1 Dimension D amp E do not include interlead flash 2 Dimension B1 does not include dambar protrusion intrusion 3 Controlling dimension inches 4 Profile tolerance zones for D and E do not in
3. Mra OLOGY GS70328SJ TS Read Cycle 2 WE Vin tRC Address taa gt toe 9 gt OLZ Data Out KOO DATA VALID High impedance Write Cycle 7 8 10 12 15 Parameter Symbol Unit Min Max Min Max Min Max Min Max Min Max Write cycle time tWC 7 8 10 12 15 ns Address valid to end of write tAW 5 5 5 7 10 13 ns Chip enable to end of write tCw 5 5 5 7 10 13 ns Data set up time tDW 3 5 4 5 7 10 ns Data hold time tDH 0 0 0 0 0 ns Write pulse width tWP 5 5 5 7 10 13 ns Address set up time tAS 0 0 0 0 0 ns Write recovery time WE tWR 0 0 0 0 0 ns Write recovery time CE tWR1 0 0 0 0 0 ns Output Low Z from end of write wWLZ 2 2 2 3 3 ns Write to output in High Z tWHZ 3 35 4 5 5 ns These parameters are sampled and are not 100 tested KA T nu M 9 2 8000000000 1750000 00 Rev 1 11 11 2004 6 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mrcanowe GS70328SJ TS Write Cycle 1 WE control e tme Addres
4. Functional operation shall be restricted to Recommended Operating Conditions Exposure to higher than recommended voltages for extended periods of time could affect device reliability a Rev 1 11 11 2004 2 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra NOLOGY GS70328SJ TS Recommended Operating Conditions Parameter Symbol Minimum Typical Maximum Unit Supply Voltage for 7 8 10 12 Vpp 3 0 3 3 3 6 V Input High Voltage Vin 2 0 Vpp 0 3 V Input Low Voltage VIL 0 3 0 8 V Ambient Temperature Commercial Range Te j E n C Ambient Temperature Industrial Range Ti Ri NH 99 c Notes 1 Input overshoot voltage should be less than Vpp 2 V and not exceed 20 ns 2 Input undershoot voltage should be greater than 2 V and not exceed 20 ns Capacitance Parameter Symbol Test Condition Maximum Unit Input Capacitance Cin Vin 0V 5 pF Output Capacitance Cour Vout 0V 7 pF Notes 1 Tested at Ta 25 C f 1 MHz 2 These parameters are sampled and are not 100 tested DC I O Pin Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current liL Vin 0 to Vpp 1uA 1uA Output High Z Output Leakage Current ILo Vout 0 to Vpp 1uA 1uA Output High Voltage VoH loH 4 mA 24V Output Low Vol
5. clude mold protrusion Allowable mold protrusion on E is 0 15 mm per side and on D is 0 25 mm per side 0 O 0 00 0 7777777 orru Rev 1 11 11 2004 9 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra dL QU GS70328SJ TS Ordering Information Part Number Package Access Time Temp Range Status GS70328SJ 7 300 mil SOJ 7 ns Commercial GS70328SJ 8 300 mil SOJ 8ns Commercial GS703288J 10 300 mil SOJ 10 ns Commercial GS70328SJ 12 300 mil SOJ 12 ns Commercial GS703288J 15 300 mil SOJ 15 ns Commercial GS70328SJ 71 300 mil SOJ 7ns Industrial GS70328SJ 81 300 mil SOJ 8ns Industrial GS70328SJ 101 300 mil SOJ 10 ns Industrial GS70328SJ 12I 300 mil SOJ 12 ns Industrial GS703288J 15l 300 mil SOJ 15 ns Industrial GS70328TS 7 TSOP I 8 x 13 4 mm 7 ns Commercial GS70328TS 8 TSOP I 8 x 13 4 mm 8ns Commercial GS70328TS 10 TSOP I 8 x 13 4 mm 10 ns Commercial GS70328TS 12 TSOP I 8 x 13 4 mm 12ns Commercial GS70328TS 15 TSOP 8 x 13 4 mm 15 ns Commercial GS70328TS 7I TSOP 8 x 13 4 mm 7 ns Industrial GS70328TS 8l TSOP I 8 x 13 4 mm 8 ns Industrial GS70328TS 101 TSOP I 8 x 13 4 mm 10 ns Industrial GS70328TS 12I TSOP I 8 x 13 4 mm 12 ns Industrial GS70328TS 151 TSOP 8 x 13 4 mm 15 ns Industrial Customers requiring deli
6. ge without notice For latest documentation see http www gsitechnology com
7. pene i D LOGY GS70328SJ TS SOJ TSOP 32K x 8 7 8 10 12 15 ns Commercial Temp DD Industrial Temp 256Kb Asynchronous SRAM Corner Vpp and Vss Features Fast access time 7 8 10 12 15 ns E 75 65 50 50 50 mA at max cycle rate Pin Descriptions Single 3 3 V 0 3 V power supply All inputs and outputs are TTL compatible Symbol Description Fully static operation Ao A14 Address input Industrial Temperature Option 40 to 85 C DQi DQs Data input output Package line up SJ 300 mil 28 pin SOJ package CE Chip enable input TS 8 mm x 13 4 mm 28 pin TSOP Type I package WE Write enable input em OE Output enable input Description m Vpp 43 3 V power supply The GS70328 is a high speed CMOS static RAM organized as 32 763 words by 8 bits Static design eliminates the need for Vss Ground external clocks or timing strobes The GS70328 operates on a NC No connect single 3 3 V power supply and all inputs and outputs are TTL compatible The GS70328 is available in 300 mil 28 pin SOJ and 8 x 13 4 mm 28 pin TSOP Type I packages Pin Configuration
8. s Pa taw tWR tew SN M tas twe gt WE Ao tow toH Data In b ees twz je gt twiz Data Out SOOO HIGH IMPEDANCE 5 Write Cycle 2 CE control MC twe Address XK taw Pi twrt OE tas tew gt CE A tw gt twp gt m W Z7 p tow tDH Data In DATA VALID L Data Out HIGH IMPEDANCE D Rev 1 11 11 2004 7 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra OLOGY GS70328SJ TS 28 Pin SOJ 300 mil Dimension in inch Dimension in mm Symbol min nom max min nom max A 0448 3 76 DENS aad 3D A1 0025 0 64 T A2 0 095 0 100 0 105 241 254 267 u I o B 0 015 0 020 0 38 0 51 CUN ERES y Y B1 0 026 0 028 0 032 0 66 0 71 0 81 E e C 0 008 0 010 0 012 0 20 0 25 0 30 0 705 0 71 0 715 17 91 18 03 18 16 D 2 E 0 295 0 300 0 305 7 49 7 62 7 75 LS qu 5 See Lla x yle Ks HE 0 330 0 335 0 340 838 851 864 DetalA GE 0 255 0 265 0 275 6 48 6 73 6 985 li 0 082 2 08
9. tage VoL ILo 4 mA 0 4 V U IX n M 0000 000 07 7777777 u u NN Rev 1 11 11 2004 3 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com GS70328SJ TS Mrcanowe Power Supply Currents 0 to 70 C 40 to 85 C Parameter Symbol Test Conditions 7ns 8ns 10ns 12ns 15ns 7ns 8ns 10ns 12ns 15 ns CE lt VIL Operating All other inputs Supply IDD gt VIH or lt VIL 75 mA 65 mA 50 mA 50 mA 50 mA 80 mA 70 mA 55 mA 55 mA 55 mA Current Min cycle time IOUT 0 mA CE gt VIH Standby All other inputs Current ISB1 gt VIH or lt VIL 35 mA 30 mA 25 mA 25 mA 25 mA 40 mA 35 mA 30 mA 30 mA 30 mA Min cycle time CE gt Vpp 02 V Standby All other inputs Current nee 2 Vpp 0 2 V or Mus zi lt 0 2V AC Test Conditions Output Load 1 Parameter Conditions DQ oL Input high level Vin 24V JJ L 1 Input low level V 04 V E aed Input rise time tr 1V ns VT 1 4V i Input fall time tf 1 V ns Input reference level 14V Output Load 2 Output reference level 14V 3 3 V Output load Fig 1 amp 2 DQ n Notes lt 1 Include scope and jig capacitance 5pF SQ 2 Test conditions as specified with output loading as shown in Fig 1 unless otherwise noted 3 Ou
10. tput load 2 for tiz tuz toz and touz 1999 GSI Technology Rev 1 11 11 2004 4 11 Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra OLOGY GS70328SJ TS AC Characteristics Read Cycle 7 8 10 12 15 Parameter Symbol Unit Min Max Min Max Min Max Min Max Min Max Read cycle time tre 7 8 10 12 15 ns Address access time taa 7 8 10 12 15 ns Chip enable access time CE tac 7 8 10 12 15 ns Output enable to output valid OE toE 35 4 5 6 7 ns Output hold from address change toH 2 2 2 3 3 ns Chip enable to output in low Z CE uz 2 2 2 3 3 ns Output enable to output in low Z OE toz 0 0 0 0 0 ns Chip disable to output in High Z CE thz 35 4 5 6 7 ns Output disable to output in High Z OE touz 3 35 4 5 6 ns These parameters are sampled and are not 100 tested Read Cycle 1 CE OE Vj WE Vj tRC Address taa p toy gt Data Out Previous Data OXXX Data valid ll aaa Rev 1 11 11 2004 5 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com
11. very in Tape and Reel should add the character T to the end of the part number For example GS70328TP 8T XX M 0 8 CC777occ A NN Rev 1 11 11 2004 10 11 1999 GSI Technology Specifications cited are subject to change without notice For latest documentation see http www gsitechnology com Mra OLOGY GS70328SJ TS R evision History Old T f Chan D ney pris ole U eae icai Page Revisions Reason 1 03 8 1999 Gohil Added 12ns speed bin information to 70328 datasheet 1 04 11 1999 omen GS70328Rev1 04 12 1999KRev Format Content e GSI Logo 1 05 2 2000L Nominal value for H the TSOP I 28 pi k h Rev 1 05 2 2000L Rev1 06 6 2000 Content omina value tor Hy On he TSOP pin package changed to 13 4 Updated format to conform to Tech Pubs standards PVO REVNO poral content Corrected errors in both case diagrams Added 12 ns reference to Parameter column in Nea eSOFE Un Comen Recommended Operating Conditions table on page 3 70328 r1 08 70328 r1 09 Content Added 15 ns references to entire document 70328 r1 09 70328 r1 10 Content Removed 6 ns speed bin from entire document 70328 r1 10 70328 r1 11 Format Updated format Nssm M 8000000000000 eee Rev 1 11 11 2004 11 1 1999 GSI Technology Specifications cited are subject to chan

GSI TECHNOLOGY GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM

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