HAMAMATSU G8422/G8372/G5852 series InGaAs PIN photodiode
Contents
1. 2x10 8 x 10 G5852 23 3 x 10 S BAER Ss ISION MAMATSU InGaAs PIN photodiode G8422 G8372 G5852 series E Spectral response PHOTO SENSITIVITY A W WAVELENGTH um KIRDBO226EA E Dark current vs reverse voltage Non cooled type DARK CURRENT 100 uA 10 uA 1 uA 100 nA 10 pA 0 Typ Ta 25 C 01 0 1 1 10 REVERSE VOLTAGE V KIRDB0235EA E Terminal capacitance vs reverse voltage TERMINAL CAPACITANCE Typ Ta 25 C f 1 MHz 10 nF G8372 03 G5852 13 23 1 nF G8372 01 G5852 11 21 100 pF 10 pF G8422 05 G8422 03 G5852 103 203 1 pF 0 01 0 1 1 10 REVERSE VOLTAGE V KIRDBO236EA E Photo sensitivity temperature characteristic TEMPERATURE COEFFICIENT C TE cooled type Typ DARK CURRENT 0 1 uA 100 nA 10 nA Typ O 8 1 12 14 16 18 2 22 24 26 WAVELENGTH um KIR2. 20 40 60 40 Typ Ta 25 C Thermal resistance of heatsink 3 C W ONE STAGE TE COOLED TYPE TWO STAGE TE COOLED TYPE CURRENT A KIRDB0231EA InGaAs PIN photodiode G8422 G8372 G5852 series E Dimensional outline unit mm G8422 03 05 G8372 01 G8372 03 5 4 0 2 9 2 0 2 x lt lt gt w S PHOTOSENSITIVE FA PHOTOSENSITIVE SURFACE SURFACE 0 45 0 45 LEAD LEAD 25 0 2 5 1 0 3 at Do 1 5 MAX ae gt O CASE CASE A oeo 0 KIRDA0150EA KIRDA0151EA G5852 103 11 13 G5852 203 21 23 15 3 0 2 _915 3 0 2 _ 14 0 2 14 0 2 WINDOW a WINDOW a 10 0 2 F 10 0 2 o S Y LA Y O y PHOTOSENSITIVE a RFACE Seale a Z PHOTOSENSITIVE ai SURFACE S s Y gt ap 1 0 45 6 N LEAD 10 2 0 2 DETECTOR ELEMENT ANODE DETECTOR ELEMENT CATHODE 3 TE COOLER o DETECTOR ELEMENT ANODE TE COOLER 5 DETECTOR ELEMENT CATHODE i O THERMISTOR 8 TE COOLER Ls TE COOLER THERMISTOR KIRDAO029EB KIRDA0031EB Ra AM ey ATSU Information furnished by HAMAMATSU is believed to be reliable However no responsibility is assumed for possible inacc
3. AS341G 5852 103 H hy Bs PHOTODIODE InGaAs PIN photodiod G8422 G8372 G5852 series e ik Long wavelength type up to 2 1 um gt Cut off wavelength 2 1 um 3 pin TO 18 package low price TE cooled type TO 8 package low dark current Active area 60 3 to 63 mm E Specifications Absolute maximum ratings Dimensional G8422 03 G8422 05 D TO 18 G8372 01 G8372 03 G5852 103 5 A ne stage Se TE cooled G5852 13 G5852 203 7 wo stage Do TE cooled G5852 23 on a Applications Gas analyzer Water content analyzer NIR Near Infrared photometry Absolute maximum ratings Active Thermistor TE cooler Reverse Operating Storage area power allowable voltage temperature temperature dissipation current VR Topr Tstg A v 40 to 70 55 to 85 C C 03 Electrical and optical characteristics Typ unless otherwise noted Spectral Measurement condition Shunt response resistance NEP Rsh A Ap VR 10 mV W Hz G8422 03 rss sso 100 8 09 1 5 x 10 8422 05 ae a25 a250 80 f 20 03 5 gy 5 10 G8372 01 500 5000 40 600 1 4 x 10 G8372 03 5 WA 50 uA 3 800 0 01 1 5 x10 35852 103 ros 12 ESS s o e 8 5x10 G5852 11 10 0 9to2 07 50 500 40 80 141 8x10 1x 107 G5852 13 4 x 10 G5852 203 3 30 100 8 18 3 x 10 G5852 21 20 0 9 to 2 05 25 250 40 80 2 4J1
4. DB0207EA REVERSE VOLTAGE V KIRDB0228EA E Shunt resistance vs element temperature SHUNT RESISTANCE 10 MQ 1 MQ 100 kQ 10 kQ 1 kQ Typ VR 10 mV G8422 03 G5852 103 203 G8422 05 G8372 G5852 1 21 NEN 3 23 ELEMENT TEMPERATURE C KIRDB0237EA InGaAs PIN photodiode G8422 G8372 G5852 series E Thermistor temperature characteristic RESISTANCE 0 10 10 40 20 0 20 ELEMENT TEMPERATURE C KIRDBO116EA E Current vs voltage characteristics of TE cooler CURRENT A Typ Ta 25 C Thermal resistance of heatsink 3 C W ONE STAGE TE COOLED TYPE TWO STAGE TE COOLED TYPE 0 0 5 1 0 1 5 VOLTAGE V KIRDBO115EA E Cooling characteristics of TE cooler ELEMENT TEMPERATURE C
5. uracies or omissions Specifications are subject to change without notice No patent rights are granted to any of the circuits described herein 2001 Hamamatsu Photonics K K HAMAMATSU PHOTONICS K K Solid State Division 1126 1 Ichino cho Hamamatsu City 435 8558 Japan Telephone 81 053 434 3311 Fax 81 053 434 5184 http www hamamatsu com U S A Hamamatsu Corporation 360 Foothill Road P O Box 6910 Bridgewater N J 08807 0910 U S A Telephone 1 908 231 0960 Fax 1 908 231 1218 Germany Hamamatsu Photonics Deutschland GmbH Arzbergerstr 10 D 82211 Herrsching am Ammersee Germany Telephone 49 08152 3750 Fax 49 08152 2658 France Hamamatsu Photonics France S A R L 8 Rue du Saule Trapu Parc du Moulin de Massy 91882 Massy Cedex France Telephone 33 1 69 53 71 00 Fax 33 1 69 53 71 10 United Kingdom Hamamatsu Photonics UK Limited 2 Howard Court 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW United Kingdom Telephone 44 1707 294888 Fax 44 1707 325777 North Europe Hamamatsu Photonics Norden AB Smidesvagen 12 SE 171 41 Solna Sweden Telephone 46 8 509 031 00 Fax 46 8 509 031 01 Italy Hamamatsu Photonics Italia S R L Strada della Moia 1 E 20020 Arese Milano Italy Telephone 39 02 935 81 733 Fax 89 02 935 81 741 Cat No KIRD1047E02 Sep 2001 DN
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HAMAMATSU G8422/G8372/G5852 series InGaAs PIN photodiode