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HITACHI 2SC1213A(K) Manual

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1. Gain Bandwidth Product fy MHz Collector to Base Voltage Vcg V Emitter to Base Voltage Vgg V Base to Emitter Saturation Voltage vs Collector Current 11 777M o t0 1 0 Pulse 0 9 0 8 0 7 23 0 0 6 2 Deo 0 5 kal 0 4 0102 0510 2 5 10 20 50 100200 500 Collector Current Ic mA Gain Bandwidth Product vs Collector Current 280 Ver 3 VA 240 200 160 120 40 2 5 10 20 50 100 200 500 Collector Current lc mA HITACHI 2SC1213A K Switching Time t ns 1 000 500 200 100 50 20 10 Switching Time vs Collector Current lor tstg Voc 10 3 V Io 10 lay 10 lg LI l 5 10 20 50 100 200 Collector Current Ic mA 500 HITACHI Unit mm 4 8 0 3 3 8 0 3 Ful N e H e 16 Y J A gt w LO a 0 60 Max NU N a ake e 0 5 U i
2. Tvpical Output Characteristics 2 Tvpical Transfer Characteristics 100 30 Veg 3 V 80 v L ZO z 60 E p 5 5 3 R o o i LIEN s 40 5 G 5 5 l 3 2 1 0 6 20 6 0 3 0 10 20 30 40 50 0 02 04 06 08 10 12 Collector to Emitter Voltage Vcg V Base to Emitter Voltage Vge V DC Current Transfer Ratio vs Collector Current Collector Cutoff Current vs 140 UFFF Collector to Base Voltage LU 100 1008 d 120 T o g 30 100 N 6 75 oc Q 10 Ti o 9 3 80 z 3 50 S g 60 3 1 Mas 25 63 P o 8 03 3 2 Q 9 8 0 1 a 0 03 0 0 10 20 30 40 50 2 5 10 20 50 100 200 500 Collector to Base Voltage Vcg V Collector Current Ic mA HITACHI 2SC1213A K 0 32 LU o gt 028 gt S 0 24 E Z 0 20 Q S 0 16 23 0 12 5 0 08 LLI 2 0 04 5 o KO Oo Collector Output Capacitance Co pF Emitter input Capacitance Ci pF 0 0 1 0 3 1 0 3 10 30 0 0 1 0 3 1 0 3 10 30 100 300 1 000 70 TO 60 50 40 30 20 10 Collector to Emitter Saturation Voltage vs Collector Current Tm lc 10 lg Base to Emitter Saturation Voltage VgE sat V Collector Current Ic mA Input And Output Capacitance vs Voltage f 1 MHz Cop le 0
3. l 10 MA Turn on time ton 0 25 uS Vec 10 3 V lo 1015 10 lg 10 MA Turn off time ton 0 85 us Storage time la 0 4 uS Vog 2 5V lo lg lg 20 mA Notes 1 The 28C1213A K is grouped by h as follows 2 Pulse test B C D 60 to 120 100to 200 160 to 320 HITACHI 2SC1213A K Switching Time Test Circuit Switching Time Test Circuit ton tot Test ecu tstg Test Circuit CRT D U T CRT 1k Q P G P G tt s5 ns b t t 15 ns 10 3 V PW 2 5 us PW25us R duty ratio lt 2 duty ratio 10 SG Gr Response Waveform 13V 90 Input 0 Output gt 30 0 gu a ton lor 500 Maximum Collector Dissipation Curve 500 T 400 o gt 400 5 5 300 5 300 5 8 gt 200 200 E 8 100 a 100 9 o 2 S 0 50 100 150 0 1 2 3 4 5 Ambient Temperature Ta C Collector to Emitter Voltage Vcg V HITACHI 2SC1213A K
4. 18 2SC 1213A KEM E 2SC1213A K Silicon NPN Epitaxial HITACHI Application e Low frequency amplifier e Medium speed switching Outline TO 92 1 1 Emitter 2 Collector 3 Base oe Hitacht semiconductor 2SC1213A K Absolute Maximum Ratings Ta 25 C Item Symbol Ratings Unit Collector to base voltage Veso 50 V Collector to emitter voltage Vcgo 50 V Emitter to base voltage Vero 4 V Collector current la 500 mA Collector power dissipation Pc 400 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical Characteristics Ta 25 C Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V moso 50 V 1 10 uA 1 20 voltage Collector to emitter breakdown Vgaceo 50 V lo 1 0 mA Ri voltage Emitter to base breakdown Vento 4 V I 10 uA l 0 voltage Collector cutoff current logo 0 5 HA Vo 20V 20 DC current transfer ratio he 60 320 V 3 V l 10 mA fi 10 V 3 V lg 500 mA Base to emitter voltage Vac 0 64 V Vo 3 V lo 10 mA Collector to emitter saturation Vera 0 12 0 6 V I 150 mA 15 mA voltage Base to emitter satruation V ersat 0 83 1 2 V I 150 mA 15 mA voltage Collector output capacitance Cob 7 0 pF Ves 10 V 0 f 1 MHz Gain bandwidth product f 120 MHz Vog 3 V
5. 2 2 54 Hitachi Code TO 92 1 JEDEC Conforms EIAJ Conforms Weight reference value 0 25 g Cautions 1 Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent copyright trademark or other intellectual property rights for information contained in this document Hitachi bears no responsibility for problems that may arise with third party s rights including intellectual property rights in connection with use of the information contained in this document 2 Products and product specifications may be subject to change without notice Confirm that you have received the latest product standards or specifications before final design purchase or use 3 Hitachi makes every attempt to ensure that its products are of high quality and reliability However contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury such as aerospace aeronautics nuclear power combustion control transportation traffic safety equipment or medical equipment for life support 4 Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating operating supply voltage range heat radiation characteristics installation conditions and other characteristics Hitachi bears no responsibility for f
6. ailure or damage when used beyond the guaranteed ranges Even within the guaranteed ranges consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail safes so that the equipment incorporating Hitachi product does not cause bodily injury fire or other consequential damage due to operation of the Hitachi product 5 This product is not designed to be radiation resistant No one is permitted to reproduce or duplicate in any form the whole or part of this document without written approval from Hitachi 7 Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products HITACHI Hitachi Ltd Semiconductor 8 Integrated Circuits Nippon Bldg 2 6 2 Ohte machi Chiyoda ku Tokyo 100 0004 Japan Tel Tokyo 03 3270 2111 Fax 03 3270 5109 URL NorthAmerica http semiconductor hitachi com Europe http www hitachi eu com hel ecg Asia Singapore http www has hitachi com sg grp3 sicd index htm Asia Taiwan http www hitachi com tw E Product SICD Frame htm Asia HongKong http www hitachi com hk eng bo grp3 index htm Japan http www hitachi co jp Sicd indx htm For further information write to Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte Ltd Hitachi Asia Hong Kong Ltd America Inc Electronic components Group 16 Collyer Quay 20 00 Group Ill Electronic Components 179 East Tasm
7. an Drive Dornacher Stra e 3 Hitachi Tower 7 F North Tower World Finance Centre San Jose CA 95134 D 85622 Feldkirchen Munich Singapore 049318 Harbour City Canton Road Tsim Sha Tsui Tel 1 408 433 1990 Germany Tel 535 2100 Kowloon Hong Kong Fax lt 1 gt 408 433 0223 Tel 49 89 9 9180 0 Fax 535 1533 Tel 852 2 735 9218 Fax 49 89 9 29 30 00 Fax 852 2 730 0281 Hitachi Europe Ltd Hitachi Asia Ltd Telex 40815 HITEC HX Electronic Components Group Taipei Branch Office Whitebrook Park 3F Hung Kuo Building No 167 Lower Cookham Road Tun Hwa North Road Taipei 105 Maidenhead Tel 886 2 2718 3666 Berkshire SL6 8YA United Kingdom Fax 886 2 2718 8180 Tel 44 1628 585000 Fax 44 1628 778322 Copyright Hitachi Ltd 1999 All rights reserved Printed in Japan HITACHI

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