FAIRCHILD Semiconductor LED55B/LED55C/LED56 GaAs INFRARED EMITTING DIODE
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1. 100 50 20 t _ PULSED 10 Pw 80 usec FORWARD E 5 CURRENT z 5 O 2 T CONTINUOUS ZS deele FORWARD S 10 CURRENT a N 0 5 SI Es x 02 NORMALIZED TO 2 Ip 100 mA Lei o ef Ta 25 C 0 05 0 02 0 01 001 D09 005 01 02 05 0 1 0 2 0 5 1 0 2 5 10 If FORWARD CURRENT A Figure 3 Forward Voltage vs Forward Current Figure 2 Power Output vs Temperature ag 1 4 6 0 4 0 1 2 5 2 0 a 5 10 CG 10 2 Z 08 a E 06 08 2 8 0 4 Q LI N oe S 02 S S S ul NORMALIZED TO Ee ge E lp 100 mA 08 d Ta 25 C 06 0 2 04 02 50 25 0 25 50 75 100 125 150 D Ta AMBIENT TEMPERATURE C J S 3 KR 5 p 8 9 w Vp FORWARD VOLTAGE V Figure 4 Forward Voltage vs Forward Current Figure 5 Typical Radiation Pattern 100 100 80 60 _ 40 80 Ka E Zz 2 E Ta 100 S 60 2 KE ei 10 gt Qa O g g z 6 S 40 Ka 4 E te 20 2 1 0 9 1 0 50 A0 30 20 10 0 10 20 30 40 50 Vp FORWARD VOLTAGE V 8 ANGULAR DISPLACEMENT FROM OPTICAL AXIS DEGREES DS300312 6 05 01 3 OF 4 www fairchildsemi com eae eer FAIRCHILD GaAs INFRARED EMITTING DIODE EE SEMICONDUCTOR LED55B LED55C LED56 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNC2. FAIRCHILD GaAs INFRARED EMITTING DIODE Ed SEMICONDUCTOR LED55B LED55C PACKAGE DIMENSIONS 0 209 5 31 0 184 4 67 0 030 0 76 0 255 6 48 Now 1 00 25 4 MIN ANODE I CASE 0 100 2 54 0 050 1 27 2 0 040 1 02 K 3 ANODE 0 040 1 02 0 020 0 51 2X Connected To Case NOTES CATHODE 1 Dimensions for all drawings are in inches mm 2 Tolerance of 010 25 on all non nominal dimensions unless otherwise specified DESCRIPTION The LED55B LED55C LED56 are 940 nm LEDs in a narrow angle TO 46 package FEATURES e Good optical to mechanical alignment e Mechanically and wavelength matched to the TO 18 series phototransistor e Hermetically sealed package e High irradiance level 2001 Fairchild Semiconductor Corporation DS300312 6 05 01 10F4 LED56 www fairchildsemi com eae eer FAIRCHILD GaAs INFRARED EMITTING DIODE EE SEMICONDUCTOR LED55B LED55C LED56 Parameter Operating Temperature 65 to 125 Storage Temperature 65 to 150 Soldering Temperature Iron 3 4 5 and 6 g 240 for 5 sec Soldering Temperature Flow 3 4 and 6 E 260 for 10 sec Continuous Forward Current 100 Forward Current pw 1s 200Hz 10 Reverse Voltage Power Dissipation Ta 25 C 1 Power Dissipation Tc 25 C NOTE 1 Derate power dissipation linearly 1 70 mW C above 25 C ambient 2 D
3. TION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE IN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component in any component of a life support systems which a are intended for surgical device or system whose failure to perform can be implant into the body or b support or sustain life reasonably expected to cause the failure of the life and c whose failure to perform when properly support device or system or to affect its safety or used in accordance with instructions for use provided effectiveness in labeling can be reasonably expected to result in a significant injury of the user H www fairchildsemi com 4 OF 4 6 05 01 DS300312
4. erate power dissipation linearly 13 0 mW C above 25 C case 3 RMA flux is recommended 4 Methanol or isopropyl alcohols are recommended as cleaning agents 5 Soldering iron tip 1 16 1 6mm minimum from housing 6 As long as leads are not under any stress or spring tension 7 Total power output Po is the total power radiated by the device into a solid angle of 2 m steradians ELECTRICAL OPTICAL CHARACTERISTICS Ta 25 C All measurements made under pulse conditions PARAMETER TESTCONDITIONS _symBoL_ ww TYP MAX 940 Peak Emission Wavelength Ir 100 mA Emission Angle at 1 2 Power lr 100 mA Forward Voltage lr 100 mA Reverse Leakage Current Va H3V Total Power LED55B0 lz 100 mA Total Power LED55C 7 lz 100 mA Total Power LED56 7 lr 100 mA Rise Time 0 90 of output Fall Time 100 10 of output ee ee www fairchildsemi com 20F 4 6 05 01 DS300312 EE FAIRCHILD GaAs INFRARED EMITTING DIODE BESS SEMICONDUCTOR LED55B LED55C LED56 Figure 1 Power Output vs Input Current
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FAIRCHILD Semiconductor LED55B/LED55C/LED56 GaAs INFRARED EMITTING DIODE