MICROCHIP TC429 6A Single High-Speed CMOS Power MOSFET DriverManual
Contents
1. 886 2 2717 7175 Fax 886 2 2545 0139 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1 3 Ballerup DK 2750 Denmark Tel 45 4420 9895 Fax 45 4420 9910 France Microchip Technology SARL Parc d Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A ler Etage 91300 Massy France Tel 33 1 69 53 63 20 Fax 33 1 69 30 90 79 Germany Microchip Technology GmbH Gustav Heinemann Ring 125 D 81739 Munich Germany Tel 49 89 627 144 0 Fax 49 89 627 144 44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V Le Colleoni 1 20041 Agrate Brianza Milan Italy Tel 39 039 65791 1 Fax 39 039 6899883 United Kingdom Arizona Microchip Technology Ltd 505 Eskdale Road Winnersh Triangle Wokingham Berkshire England RG41 5TU Tel 44 118 921 5869 Fax 44 118 921 5820 03 01 02 DS21416B page 14 2002 Microchip Technology Inc2. and may be superseded by updates It is your responsibility to ensure that your application meets with your specifications No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information or infringement of patents or other intellectual property rights arising from such use or otherwise Use of Microchip s products as critical com ponents in life support systems is not authorized except with express written approval by Microchip No licenses are con veyed implicitly or otherwise under any intellectual property rights DNV MSC The Netherlands DNV Certification inc Accredited by the RvA 7 DNY ISO 9001 QS 9000 REGISTERED FIRM Trademarks The Microchip name and logo the Microchip logo FilterLab KEELOQ microlD MPLAB PIC PiCmicro PICMASTER PICSTART PRO MATE SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Tech nology Incorporated in the U S A and other countries dsPIC ECONOMONITOR FanSense FlexROM fuzzyLAB In Circuit Serial Programming ICSP ICEPIC microPort Migratable Memory MPASM MPLIB MPLINK MPSIM MXDEV PICC PICDEM PICDEM net rfPIC Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U S A Serialized Quick Turn Programming SQTP is a service mark of Microchip Technology Incorporated in the U S A All other
3. 4 ada 2500pF V Logic e Ground A 6A SORA PC Trace Resistance 0 05W Power O v Ground 3 3 Input Stage The input voltage level changes the no load or quiescent supply current The N channel MOSFET input stage transistor drives a 3mA current source load With a logic 1 input the maximum quiescent supply current is 5mA Logic 0 input level signals reduce quiescent current to 500uA maximum The TC429 input is designed to provide 300mV of hysteresis providing clean transitions and minimizing output stage current spiking when changing states Input voltage levels are approximately 1 5V making the device TTL compatible over the 7V to 18V operating supply range Input current is less than 101A over this range The TC429 can be directly driven by TL494 SG1526 1527 SG1524 SE5560 or similar switch mode power supply integrated circuits By off loading the power driving duties to the TC429 the power supply controller can operate at lower dissipation improving performance and reliability FIGURE 3 4 PEAK OUTPUT CURRENT TEST CIRCUIT 18V o E 11F 11 D 18V TEK Current DE N ja Probe 6302 Re ov o2 NS 87 e o ov 4 0 11F 0 11 F 2500pF NZ TC429 JZ 3 4 Power Dissipation CMOS circuits usually permit the user to ignore power dissipation Logic families such as the 4000 and 74C have outputs that can only supply a few milliamperes
4. inches mm 8 Pin CERDIP Narrow 110 2 79 090 2 29 PIN 1 055 1 40 MAX s a 020 0 51 MIN 400 10 16 __ 320 8 13 370 9 40 7 290 7 37 7 040 1 02 200 5 08 020 0 51 160 4 06 015 0 38 SEWN 200 5 08 150 3 81 _ 3 125 3 18 MIN 008 0 20 400 10 16 SoU Ane ler 320 8 13 77 065 1 65 020 0 51 045 1 14 016 0 41 Dimensions inches mm DS21416B page 10 2002 Microchip Technology Inc TC429 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom mended workarounds To determine if an errata sheet exists for a particular device please contact one of the following 1 Your local Microchip sales office 2 The Microchip Corporate Literature Center U S FAX 480 792 7277 3 The Microchip Worldwide Site www microchip com Please specify which device revision of silicon and Data Sheet include Literature you are using New Customer Notification System Register on our web site www microchip com cn to receive the most current information on our products 2002 Microchip Technology Inc DS21416B page 11 TC429 NOTES DS21416B page 12 2002 Microchip Technology Inc TC429 Information contained in this publication regarding device applications and the like is intended through suggestion only
5. trademarks mentioned herein are property of their respective companies 2002 Microchip Technology Incorporated Printed in the U S A All Rights Reserved LI Printed on recycled paper Microchip received QS 9000 quality system certification for its worldwide headquarters design and wafer fabrication facilities in Chandler and Tempe Arizona in July 1999 and Mountain View California in March 2002 The Company s quality system processes and procedures are QS 9000 compliant for its PICmicro 8 bit MCUs KEELOQ code hopping devices Serial EEPROMs microperipherals non volatile memory and analog products In addition Microchip s quality system for the design and manufacture of development systems is ISO 9001 certified 2002 Microchip Technology Inc DS21416B page 13 MICROCHIP WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd Chandler AZ 85224 6199 Tel 480 792 7200 Fax 480 792 7277 Technical Support 480 792 7627 Web Address http www microchip com Rocky Mountain 2355 West Chandler Blvd Chandler AZ 85224 6199 Tel 480 792 7966 Fax 480 792 7456 Atlanta 500 Sugar Mill Road Suite 200B Atlanta GA 30350 Tel 770 640 0034 Fax 770 640 0307 Boston 2 Lan Drive Suite 120 Westford MA 01886 Tel 978 692 3848 Fax 978 692 3821 Chicago 333 Pierce Road Suite 180 Itasca IL 60143 Tel 630 285 0071 Fax 630 285 0075 Dallas 4570 Westgrove Drive Sui
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7. FREQUENCY kHz SUPPLY VOLTAGE V TEMPERATURE C BEN DS21416B page 8 2002 Microchip Technology lnc TC429 TYPICAL CHARACTERISTICS CONTINUED Voltage Transfer Characteristics High Output Voltage vs Current Low Output Voltage vs Current 400 400 cu Ta 25 C HYSTERESIS o OUTPUT VOLTAGE mV 8 o OUTPUT VOLTAGE mV 8 o Ww a Vpp 5V 10V 15V o OUTPUT VOLTAGE V a a 0 0 250 500 75 1 1 25 1 50 1 75 2 0 20 40 60 80 100 0 20 40 60 80 100 INPUT VOLTAGE V CURRENT SOURCED mA CURRENT SUNK mA Thermal Derating Curves 1600 1400 8 Pin DIP e D S S t gt 8 Pin CERDIP 600 MAX POWER mW eo 8 7 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE C 2002 Microchip Technology Inc DS21416B page 9 TC429 5 0 PACKAGING INFORMATION 5 1 Package Marking Information Package marking data not available at this time 5 2 Package Dimensions 8 Pin Plastic DIP PIN 1 260 6 60 240 6 10 045 1 14 fa sl a eae 400 10 16 200 5 08 140 3 56 348 a 84 150 3 81 115 2 92 310 7 87 290 7 37 020 0 51 a men sun 1 mi p Le Ban E an 110 2 79 022 0 56 090 2 29 015 0 38 Dimensions
8. MICROCHIP TC429 6A Single High Speed CMOS Power MOSFET Driver Features High Peak Output Current 6A Wide Operating Range 7V to 18V High Impedance CMOS Logic Input Logic Input Threshold Independent of Supply Voltage Low Supply Current With Logic 1 Input 5mA Max With Logic 0 Input 0 5mA Max Output Voltage Swing Within 25mV of Ground Or VpD Short Delay Time 75nsec Max High Capacitive Load Drive Capability trise FaLL 35nsec Max With CLoap 2500pF Applications Switch Mode Power Supplies e CCD Drivers e Pulse Transformer Drive Class D Switching Amplifiers Device Selection Table Part Number Package Temp Range TC429CPA 8 Pin PDIP 0 C to 70 C TC429EPA 8 Pin PDIP 40 C to 85 C TC429MJA 8 Pin CERDIP 55 C to 125 C Package Type 8 Pin PDIP CERDIP YL Vpp 1 je 8 VDD INPUT 2 gt m 7 OUTPUT NC 3 6 OUTPUT GND 4 TC429 5 GND NC No internal connection NOTE Duplicate pins must both be connected for proper operation General Description The TC429 is a high speed single CMOS level translator and driver Designed specifically to drive highly capacitive power MOSFET gates the TC429 features 2 50 output impedance and 6A peak output current drive A 2500pF capacitive load will be driven 18V in 25nsec The rapid switching times with large c
9. a 25 C 3 CL 2500pF FIGURE 3 5 PEAK OUTPUT CURRENT CAPABILITY TIME 5us DIV 3 5 POWER ON OSCILLATION Note It is extremely important that all MOSFET Driver applications be evaluated for the possibility of having High Power Oscillations occurring during the power on cycle Power on oscillations are due to trace size and layout as well as component placement A quick fix for most applications which exhibit power on oscillation problems is to place approximately 10kQ in series with the input of the MOSFET driver 2002 Microchip Technology Inc DS21416B page 7 TC429 4 0 TYPICAL CHARACTERISTICS Note The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provid
10. apacitive loads minimize MOSFET transition power loss A TTL CMOS input logic level is translated into an output voltage swing that equals the supply and will swing to within 25mV of ground or Vpp Input voltage swing may equal the supply Logic input current is under 10uA making direct interface to CMOS bipolar switch mode power supply controllers easy Input speed up capacitors are not required The CMOS design minimizes quiescent power supply current With a logic 1 input power supply current is 5mA maximum and decreases to 0 5mA for logic 0 inputs For dual devices see the TC426 TC427 TC428 TC4426 TC4427 TC4428 and TC4426A TC4427A TC4428A data sheets For noninverting applications or applications requiring latch up protection see the TC4420 TC4429 data sheet Typical Application 8 Von 6 7 eH 7 P gt o gt o O Output KH ae a7 a Input F9 TC429 a i 45 GND O Effective Input C 38pF 2002 Microchip Technology Inc DS21416B page 1 TC429 1 0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied Exposure to Absolute Maximum Rat
11. d supply voltage The package power dissipation is Po fC Vs Where f Switching frequency C Capacitive load Vs Supply voltage Quiescent power dissipation depends on input signal duty cycle A logic low input results in a low power dissipation mode with only 0 5mA total current drain Logic high signals raise the current to 5mA maximum The quiescent power dissipation is Po Vs D Iq 1 D IL Where I Quiescent current with input high 5mA max lL Quiescent current with input low 0 5mA max D Duty cycle Transition power dissipation arises because the output stage N and P channel MOS transistors are ON simultaneously for a very short period when the output changes The transition package power dissipation is approximately Pr fVs 3 3 x 10 9 A Sec An example shows the relative magnitude for each item C 2500pF Vg 15V D 50 f 200kHz Pp Package power dissipation Pc Pr Pq 113mW 10mW 41mW 164mW Maximum operating temperature Tj 84 Pp 125 C Where Ty Maximum allowable junction temperature 150 C Oja Junction to ambient thermal resistance 150 C W CERDIP Note Ambient operating temperature should not exceed 85 C for IJA devices or 125 C for MJA devices TABLE 3 1 MAXIMUM OPERATING FREQUENCIES Vs fmax 18V 500kHz 15V 700kHz 10V 1 3MHz 5V gt 2MHz CONDITIONS 1 CERDIP Package Oya 150 C W 2 T
12. ed for informational purposes only The performance characteristics listed herein are not tested or guaranteed In some graphs or tables the data presented may be outside the specified operating range e g outside specified power supply range and therefore outside the warranted range Rise Fall Times vs Supply Voltage Rise Fall Times vs Temperature Rise Fall Times vs Capacitive Load 60 60 100 TA 25 C Vpp 15V 50 50 DP tF g F 7 40 40 3 tr c c c z F 30 F 30 F 20 20 10 10 1 5 10 15 20 50 25 0 25 50 75 100 125 150 100 1K 10K SUPPLY VOLTAGE V TEMPERATURE C CAPACITIVE LOAD pF Supply Current vs Capacitive Load Delay Times vs Temperature Delay Times vs Supply Voltage 70 90 Ta 25 C 60 Vpp 15V F 80 za 50 5 2 Z 2 0 H LI 40 u 3 z gt gt 30 400kHz gt 60 lt lt x a Ww a 20 200kH a S D 5 50 10 20kHz 40 10 100 1K 10K 50 25 0 25 50 75 100 125 150 5 10 15 20 CAPACITIVE LOAD pF TEMPERATURE C SUPPLY VOLTAGE V Supply Current vs Frequency Supply Current vs Supply Voltage Supply Current vs Temperature 50 4 Ta 25 C Ta 25 C Vpp 18 C CL 2500pF 10V RL lt RL lt ll 240 Z INPUT LOGIC 1 Z INPUT LOGIC 1 E E z 15V b 5 i 30 wi wi al a a g 5 5 3 Vpp 18V o 0 3 gt 20 gt gt 4 l a a a a a a 5 10 o 77 5V 0 2 1 10 100 1K 0 4 8 12 16 20 75 50 25 0 25 50 75 100 125 150
13. ing conditions for Supply Voltage Input Voltage Any Terminal Power Dissipation Ta lt 70 C Vpp 0 3V to GND 0 3V PDIPS cect ich ck ee ele eur 730mW CERDIP issus nn plav ii ess 800mW Derating Factor PDP nenn 5 6mW C Above 36 C CERDIP 2 2 saisine drain 6 4mW C Operating Temperature Range C VersiomM WAA 0 C to 70 C E Version inise inorri 40 C to 85 C M Version wwwmmmmmamamamwa 55 C to 125 C Storage Temperature Range 65 C to 150 C TC429 ELECTRICAL SPECIFICATIONS extended periods may affect device reliability Electrical Characteristics Ta 25 C with 7V lt Vpp lt 18V unless otherwise noted Symbol Parameter Min Typ Max Units Test Conditions Input Vin Logic 1 High Input Voltage 2 4 1 8 V VIL Logic 0 Low Input Voltage 1 3 0 8 V lin Input Current 10 10 uA OV lt Vin lt Vpop Output VoH High Output Voltage Vpp 0 025 V VoL Low Output Voltage 0 025 V Ro Output Resistance 1 8 2 5 Q Vin 0 8V lout gt 10mA Vpp 18V 1 5 2 5 Q Vin 2 4V lout 10mA Vpp 18V lpk Peak Output Current S 6 A Vpp 18V Figure 3 4 Switching Time Note 1 TR Rise Time 23 35 nsec Figure 3 1 C 2500pF te Fall Time 25 35 nsec Figure 3 1 C 2500pF toi Delay Time 53 75 nsec Figure 3 1 tp2 Delay Time am 60 75 nsec Figure 3 1 Power Supply l
14. istor pull up The TC429 input structure includes about 300mV of hysteresis to ensure clean transitions and freedom from oscillation but attention to layout is still recommended FIGURE 3 2 SWITCHING SPEED Figure 3 3 shows the feedback effect in detail As the TC429 input begins to go positive the output goes negative and several amperes of current flow in the ground lead As little as 0 05Q of PC trace resistance INPUT can produce hundreds of millivolts at the TC429 ground pins If the driving logic is referenced to power ground the effective logic input level is reduced and oscillations may result AV ey 90 VOLTAGE 5V DIV To ensure optimum device performance separate ground traces should be provided for the logic and power connections Connecting logic ground directly to the TC429 GND pins ensures full logic drive to the input and fast output switching Both GND pins should be connected to power ground TIME 100ns DIV CL 2500pF Vs 18V _ OUTPUT 1 1 1 5V 100ns VOLTAGE 5V DIV TIME 100ns DIV A 2002 Microchip Technology Inc DS21416B page 5 TC429 FIGURE 3 3 SWITCHING TIME DEGRADATION DUE TO NEGATIVE FEEDBACK 18V 0 TC429 DL g v 5 1 TEK Current Fr A Sy Probe 6302 ov o DO e o OV 0 11F 5 0 1NF K
15. of current and even shorting outputs to ground will not force enough current to destroy the device The TC429 however can source or sink several amperes and drive large capacitive loads at high frequency The package power dissipation limit can easily be exceeded Therefore some attention should be given to power dissipation when driving low impedance loads and or operating at high frequency The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations Table 3 1 lists the maximum operating frequency for several power supply voltages when driving a 2500pF load More accurate power dissipation figures can be obtained by summing the three power sources Input signal duty cycle power supply voltage and capacitive load influence package power dissipation Given power dissipation and package thermal resis tance the maximum ambient operation temperature is easily calculated The 8 pin CERDIP junction to ambient thermal resistance is 150 C W At 25 C the package is rated at 800mW maximum dissipation Maximum allowable chip temperature is 150 C DS21416B page 6 2002 Microchip Technology Inc TC429 Three components make up total package power dissipation e Capacitive load dissipation Pc Quiescent power Pq Transition power Pr The capacitive load caused dissipation is a direct func tion of frequency capacitive load an
16. ol input TTL CMOS compatible logic input 3 NC No connection 4 GND Ground 5 GND Ground 6 OUTPUT CMOS totem pole output common to Pin 7 7 OUTPUT CMOS totem pole output common to Pin 6 8 VpD Supply input 7V to 18V DS21416B page 4 2002 Microchip Technology lnc TC429 3 0 APPLICATIONS INFORMATION FIGURE 3 1 INVERTING DRIVER SWITCHING TIME 3 1 Supply Bypassing TEST CIRCUIT Charging and discharging large capacitive loads Vpp 18V quickly requires large currents For example charging a 2500pF load to 18V in 25nsec requires a 1 8A current from the device s power supply To ensure low supply impedance over a wide frequency range a parallel capacitor combination is recom mended for supply bypassing Low inductance ceramic disk capacitors with short lead lengths lt 0 5 in should Input O 2 o O Output be used A 1uF film capacitor in parallel with one or two Fa 0 1uF ceramic disk capacitors normally provides Z CL 2500pF adeguate bypassing TC429 an 4 5 3 2 Grounding es de D tRISE tFALL lt 10nsec The high current capability of the TC429 demands careful PC board layout for best performance Since the TC429 is an inverting driver any ground lead impedance will appear as negative feedback which can degrade switching speed The feedback is especially noticeable with slow rise time inputs such as those produced by an open collector output with res
17. s Power Supply Current 3 5 5 mA Vi 3V 0 3 0 5 Vin OV Note 1 Switching times ensured by design DS21416B page 2 2002 Microchip Technology Inc TC429 TC429 ELECTRICAL SPECIFICATIONS CONTINUED Electrical Characteristics Over operating temperature range with 7V lt Vpp lt 18V unless otherwise noted Symbol Parameter Min Typ Max Units Test Conditions Input Vin Logic 1 High Input Voltage 2 4 V Vit Logic 0 Low Input Voltage M 0 8 V lin Input Current 10 10 uA OV lt Vin lt Vpp Output VoH High Output Voltage Vpp 0 025 V VoL Low Output Voltage 0 025 V Ro Output Resistance 9 Q Vin 0 8V lout 10MA Vpp 18V 5 Q Vin 2 4V lout 10mMA Vpp 18V Switching Time Note 1 tR Rise Time 70 nsec Figure 3 1 C 2500pF te Fall Time 70 nsec Figure 3 1 C 2500pF tp1 Delay Time 100 nsec Figure 3 1 tp2 Delay Time S 120 nsec _ Figure 3 1 Power Supply ls Power Supply Current 12 mA Vin 3V 1 Vin OV Note 1 Switching times ensured by design 2002 Microchip Technology Inc DS21416B page 3 TC429 2 0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2 1 TABLE 2 1 PIN FUNCTION TABLE Pin No 8 Pin PDIP Symbol Description CERDIP 1 Vpp Supply input 7V to 18V 2 INPUT Contr
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