NEC 2SJ328 2SJ328-Z handbook
Contents
1. P CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 254328 25 328 7 SWITCHING P CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 25 328 is P channel MOS Field Effect Transistor designed for solenoid motor and lamp driver FEATURES Low Oncstate Resistance Rbst on 48 MQ TYP Ves 10 V 10 A Rosion 85 MQ TYP Ves 4 V Ip 8 A Low Ciss Ciss 2 150 pF TYP Built in G S Gate Protection Diodes QUALITY GRADE Standard Please referto Ouality grade on NEC Semiconductor Devices Document number IEI 1209 published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications ABSOLUTE MAXIMUM RATINGS Ta 25 C Drain to Source Voltage Vpss 60 V Gate to Source Voltage VGSS AC 20 V Gate to Source Voltage Vessipc 20 10 V Drain Current DC ID DC T20 A Drain Current pulse D pulse 80 A Total Power Dissipation Tc 25 C Pr 75 W Total Power Dissipation Ta 25 C Pr2 1 5 W Channel Temperature Teh 150 C MAX Storage Temperature Tstg 55 to 150 C PW 10 us Duty Cycle S 1 Document No TC 2463 O D No TC 7968 Date Published November 1993 M Printed in Japan PACKAGE DIMENSIONS in millimeters 2954328 Gate Drain Source Fin Drain Gate C Gate protection diode Source S NEC Corporation 1993 NEC 25 328 2SJ328 Z ELECTRICAL CHARACTERISTICS Ta 25 C2. CHANNEL TEMPERATURE Gate to Source Cutoff Voltage Roston Drain to Source On State Resistance 0 50 0 50 100 150 50 0 50 100 150 Ten Channel Temperature C Ten Channel Temperature C NEC Iso Diode Forward Current 1 0 0 4 0 8 1 2 10 000 taton tr tao tt Switching Time ns SOURCE TO DRAIN DIODE FORWARD VOLTAGE Vso Source to Drain Voltage V SWITCHING CHARACTERISTICS Yos V ee E VGSto 10 V be ET ERR ro LCT 0 1 10 100 tr Reverse Recovery Time ns lo Drain Current A REVERSE RECOVERY TIME vs REVERSE DRAIN CURRENT 0 E d EE _ LL ELLHT Ld dil EE SEHE EL HELL LEES i CEI 100 Ir Diode Forward Current Ciss Coss Crss Capacitance pF Ves Gate to Source Voltage V d 259328 254328 Z CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 000 MERNI TAT Vos Drain to Source Voltage V DYNAMIC INPUT OUTPUT CHARACTERISTICS 12 0 20 40 60 100 120 Qs Gate Charge nC Vos Drain to Source Voltage V NEC 2SJ328 2SJ328 Z Reference TEA 1034 TEA 1035 TEI 1202 MEI 1202 IEI 1207 No part of this document may be copied or reproduced in any form or by any means without the prior written
3. Drain to Source On state Resistance 2 0 V Vos 10 V lp 1 mA Vos 10 V bb 10A Vos 60 V Ves 0 Ves 16 V Vos 0 Drain to Source On state Resistance 0 Gate to Source Cutoff Voltage Ww Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Ciss Coss 2 150 1 100 Input Capacitance Vos 10V Ves 0 f 1 MHz Output Capacitance O d a 1 Reverse Transfer Capacitance eks Turn On Delay Time VGston 10 30 V lo 10 A Res 10 Q Ri 3 0 Q 2 o 1 ct o Rise Time Turn Off Delay Time 240 230 Tdtoff rh Fall Time 2 Total Gate Charge Ves 10 V lo 20 A 48 V le 20 A Ves 0 lc 20 A Ves 0 di dt 50 A us Gate to Source Charge 3 Gate to Drain Charge lt 2 3 Diode Forward Voltage 120 260 Reverse Recovery Time a o 2 Reverse Recovery Charge Test Circuit 1 Switching Time TUT RL R PG 10 Q I 1 5 Duty Cycle S 1 Test Circuit 2 Gate Charge T U T CHARACTERISTIC SYMBOL MIN MAX UNIT TEST CONDITIONS NEC 259328 25J9328 Z ELECTRICAL CHARACTERISTICS Ta 25 C dT Percentage of Ra
4. consent of NEC Corporation NEC Corporation assumes no responsibility for any errors which may appear in this document NEC Corporation does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device No license either express implied or otherwise is granted under any patents copyrights or other intellectual property rights of NEC Corporation or others The devices listed in this document are not suitable for use in aerospace equipment submarine cables nuclear reactor control systems and life support systems If customers intend to use NEC devices for above applications or they intend to use Standard quality grade NEC devices for applications not intended by NEC please contact our sales people in advance Application examples recommended by NEC Corporation Standard Computer Office equipment Communication equipment Test and Measurement equipment Machine tools Industrial robots Audio and Visual equipment Other consumer products etc Special Automotive and Transportation equipment Traffic control systems Antidisaster systems Anticrime Systems etc M4 92 6
5. 10 100 Case Temperature C Vos Drain to Source Voltage V TOTAL POWER DISSIPATION vs DRAIN CURRENT vs CASE TEMPERATURE DRAIN TO SOURCE CURRENT Rud 4 TT 20 Vy gt lt E 60 t 2 d d 2 l 2 20 NEC 25328 2SJ328 2Z FORWARD TRANSFER ADMITTANCE vs TRANSFER CHARACTERISTICS DRAIN CURRENT e EP peu E ET EEEER SN a AS ea LEUR E af E ops s E LZ 2 DER SERE s 15 Cat NT 5 TERS S A ES m E a Id ee i ER E HAE 2 ttt RR ERI f E zi 0 2 4 6 10 1 10 100 Ves Gate to Source Voltage V Drain Current DRAIN TO SOURCE ON STATE RESISTANCE DRAIN TO SOURCE ON STATE RESISTANCE vs DRAIN CURRENT LAU l4 af Ves 4 V JL vs GATE TO SOURCE VOLTAGE 0 15 0 16 0 12 0 05 0 04 Roston Drain to Source On State Resistance Roston Drain to Source On State Resistance Q 0 10 100 Ves Gate to Source Voltage V lo Drain Current A GATE TO SOURCE CUTOFF VOLTAGE vs DRAIN TO SOURCE ON STATE RESISTANCE vs CHANNEL TEMPERATURE
6. ted Power 96 Total Power Dissipation W rin t Transient Thermal Resistance C W DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Ip Drain Current A RP 4 25 C Single Pulse 20 40 60 80 100 120 140 160 0 2 4 6 8 Tc Case Temperature C Vos Drain to Source Voltage V TRANSIENT THERMAL RESISTANCE vs PULSE WIDTH _ ie ao SSF Se a eS aes Cana SS ee ES eS ee ee ee eS TT SS AL I Ilic ppp EH ee Fe a oo ee See itt Eg a a EL LLL e See ae ES a A SS Ae eS Se a a eS a SS 49 GNE UU NO SUO SRE PONT SEES MENS DENS EDD RO NS SE RT Os EE EO AD A GE OE CON Oe Dei Cp GE 190 a ESA DA SD Pa E D a al Pt eee ao oo ee ee oT LLLI er LH _ qd Labb aA GRRE AA GS 28 A SN CR 21 ACERS GCE lad cere SE aE a GE minded err ett i m ee F NIE Ni Ed EIL RUE PW Pulse Width s ee m 10m 100m 1 100 FORWARD BIAS SAFE OPERATING AREA 20 40 60 80 100 120 140 160
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