SANYO 2SJ275 handbook
Contents
1. 4 e 0 20 40 60 80 1 120 140 160 Ambient Temperature T C ase Temperature T C W No products described or contained herein are intended for use in surgical implants life support systems aerospace equipment nuclear power control systems vehicles disaster crime prevention equipment and the like the failure of which may directly or indirectly cause injury death or property loss W Anyone purchasing any products described or contained herein for an above mentioned use shall D Accept full responsibility and indemnify and defend SANYO ELECTRIC CO LTD its affiliates subsidiaries and distributors and all their officers and employees jointly and severally against any and all claims and litigation and all damages cost and expenses associated with such use Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO LTD its affiliates subsidiaries and distributors or any of their officers and employees jointly or severally W Information including circuit diagrams and circuit parameters herein is for example only it is not guarant eed for volume production SANYO believes information herein is accurate and reliable but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties No 4240 3 32. 283275 P Channel MOS Silicon FET Very High Speed Switching Applications Features Low ON resistance Very high speed switching Low voltage drive Surface mount type device making the following possible Reduction in the number of manufacturing processes for 25J275 applied equipment High density surface mount applications Small size of 25J275 applied equipment Absolute Maximum Ratings at Ta 25 C unit Drain to Source Voltage Vpss 100 V Gate to Source Voltage Vass 15 V Drain Current DC Ip 6 A Drain Current Pulse Ipp PW 10zs duty cycles 1 24 A Allowable Power Dissipation Pp 1 65 W T 25 C 50 W Channel Temperature Tch 150 C Storage Temperature Tstg 55to 150 C Electrical Characteristics at Ta 25 C min typ max unit D S Breakdown Voltage Viprypss Ip 1mA Vgs 0 100 V G S Breakdown Voltage Viprnyess Ig 100A Vps 0 15 V Ea Gate Voltage Ipss Vps 100V Vas 0 100 pA Drain Current Gate to Source Leakage Current Icss Voes 12V Vps 0 10 pA Cutoff Voltage Veso Vps 10V Ip 1mA 1 0 2 0 V Forward Transfer Admittance lY Vps 10V ip 3A 3 5 S pre Drain to Source Rpsion Ip 3A Vgs 10V 0 3 0 4 Q on State Resistance RDSon In 3A Ves 4V 0 4 0 55 Q Continued on next page Package Dimensions 2093 Package Dimensions 2090 unit mm 10 unit mm ar n a o 0 8 4 G D S G Gate D Drain S Source G Gate e D Drain SANYO SMP FD
3. S Source SANYO SMP SANYO Electric Co Ltd Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg 1 10 1 Chome Ueno Taito ku TOKYO 110 JAPAN 1193TH KOTO AX 8376 No 4240 1 3 25 275 Continued from preceding page min typ max unit Input Capacitance Ciss Vps 20V f 1MHz 950 pF Output Capacitance Coss Vps 20V f 1MHz 200 pF Reverse Transfer Capacitance Cree Vps 20V f 1MHz 40 pF Turn ON Delay Time tacon see specified Test Circuit 15 ns Rise Time tr 30 ns Turn OFF Delay Time tao 80 ns Fall Time tf 70 ns Diode Forward Voltage Vsp Is 6A Vas 0 1 0 1 5 V Switching Time Test Circuit Vpp 50Y Vin 5 ov sov U Ip 3A AL 16 70 Pw 10us 7 y D C lt 1x OUT P G 289275 Drain Current Ip A Drain Current Ip A Drain to Source Voltage Vps V Yes Ip Ae Forward Transfer Admittance Yg S Static Drain to Source Gate to Source Voltage Vas V No 4240 2 3 285275 Ciss Coss Crss Vos a a o lo ee EM ie ee ee G coo S u N RO ON p o l 58o Bs E S3 a o 10 E p o 2 ag Sg ee 10 5 80 40 0 40 80 120 160 0 h 8 12 16 20 24 28 32 Case Temperature T C Drain to Source Voltage Vps V SW Time lt t0 l a 3 Operation in this area is D z 8 1 0 Q 3Hlimited by RDS on Switching Time SW Time ns Allowable Power Dissipation Pp W
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SANYO 2SJ275 handbook