NEC 2SJ208 handbook
Contents
1. VGs 16 V Vps 0 Gate Cut off Voltage VGSloff uA _ Forward Transfer Admittance 04 i6 S Vps 3V Ip 1 0A Drain to Source On State Resistance Boston 16 30 Vas 2 5 V Ip 30mA Drain to Source On State Resistance RDS on 2 Vas 4 0 V Ip 1 0 A i Vps 3 V Vas 0 f 1 MHz E tf Sa ee Feedback Capacitance ES I Turn On Delay Time ton 175 Turn Off Delay Time td off Fall Time ft Gate RL DUT Voltage Wave form VDD RG PG Drain Current Wave form VGS on 3 V Rg 10 2 Vpp 10 Ip 0 1 A RE 20 2 r 1 us Duty Cycle lt 1 TYPICAL CHARACTERISTICS T 25 C DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs SAFE OPERATING AREA AMBIENT TEMPERATURE ss z i 2 42 2 a c a 2 Q O H a 0 30 60 90 120 150 180 Case Temperature C Ta Ambient Temperature C 25J208 NEC DRAIN CURRENT vs DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS Pulse measurement measurement y Q y uann Q Vas Gate to Source Voltage V Vps Drain to Source Voltage V DRAIN TO SOURCE ON STATE RESISTANCE vs GATE TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs DRAIN CURRENT Jl 5 Y 2 5 VGsS G2. products etc Special Automotive and Transportation equipment Traffic control systems Antidisaster systems Anticrime systems etc M4 92 6
3. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ208 P CHANNEL MOS FET FOR SWITCHING The 2SJ208 P channel vertical type MOS FET is a switching device which can be driven by 2 5 V power supply As the MOS FET is driven by low voltage and does not require con sideration of driving current it is suitable for appliances including VCR PACKAGE DIMENSIONS Unit mm cameras and headphone stereos which need power saving FEATURES Directly driven by ICs having a 3 V power supply Not necessary to consider driving current because of its high in put impedance 0 411098 e Possible to reduce the number of parts by omitting the bias resistor Drain D Has low on state resistance 2 Drain Rps on 3 0 Q MAX OV as 25V Ip 30 mA 3 Gate u ee Rps on 1 0 MAX Vgg 4 0 V Ip 1 0 A Gate G QUALITY GRADE Standard Source S Please refer to Quality grade on NEC Semiconductor Devices Document number IEI 1209 published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications Diode in the figure is the parasitic diode Document No TC 2330A 0 D No TC 7744B Date Published November 1994 M Printed in Japan NEC Corporation 1991 NEC 2SJ208 ELECTRICAL CHARACTERISTICS T 25 PARAMETER SYMBOL Drain Cuf off Current loss 0 4 TEST CONDITIONS Gate Leakage Current IGSS 75 0
4. ate to Source Voltage V SWITCHING CHARACTERISTICS Ip Drain Current A su 8 37 340 4 5 20U4B SIS9AY 2 2 S UQ ureug UO SAy 10 1 0 Ip Drain Current Ip Drain Current A 0 1 N 836 DRAIN TO SOURCE ON STATE RESISTANCE vs DRAIN CURRENT 0 01 5 20U2 SISOY 5 eounos 0 UO SAy NEC 2SJ208 RECOMMENDED SOLDERING CONDITIONS Mounting of this product by soldering should be done under the following conditions Please consult our representatives about soldering methods and conditions other than these SURFACE MOUNT TYPE For details of the recommended soldering conditions see the information document Device Mounting Manual for Surface Mounting 1 1 1207 ii Symbol for Soldering Method Soldering Conditions Recommended Package peak temp 230 C Infrared Reflow Soldering time within 30 sec above 210 C IR30 00 Soldering times 1 Days limitation none Package peak temp 215 C Soldering time within 40 sec above 200 C Soldering times 1 Days limitation none Vapor Phase Soldering Soldering bath temp below 260 C Soldering time within 10 sec Soldering times 1 Days limitation none Wave Soldering WS60 00 Stored days under
5. storage conditions at 25 C and below 65 R H after the dry pack has been opened Note 1 Combination of soldering methods should be avoided REFERENCE 1E1 1213 MEI 1202 MF 1134 VP15 00 25J203 NEC 2SJ208 MEMO No part of this document may be copied or reproduced in any form or by any means without the prior written es consent of NEC Corporation NEC Corporation assumes no responsibility for any errors which may appear in this document NEC Corporation does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device No license either express implied or otherwise is granted under any patents copyrights or other intellectual property rights of NEC Corporation or others The devices listed in this document are not suitable for use in aerospace equipment submarine cables nuclear reactor control systems and life support systems If customers intend to use NEC devices for above applications or they intend to use Standard quality grade NEC devices for applications not intended by NEC please contact our sales people in advance Application examples recommended by NEC Corporation Standard Computer Office equipment Communication equipment Test and Measurement equipment Machine tools Industrial robots Audio and Visual equipment Other consumer
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NEC 2SJ208 handbook