NEC 2SJ180 handbook
Contents
1. ae Mi MOS FIELD EFFECT TRANSISTOR 295180 P CHANNEL MOS FET FOR HIGH SPEED SWITCHING SR REPETI OU MIC BAS IPC TT AIC SOAM oe PE EY KALI SONT MBA PARCI Pv LEM I QAI CAM INR nA COLS REA TC OE ATE OL CIL EET Un EE DAI C USED ND PETI S AC AT WP ST A Mn MMSE ERATE T T OE AIT y T TY AP PR HO TIT ITI CAPIT UR QU MISMA UD EHE LE SUPT EG Pa MUS EEC ROTTER VA CUPIT IDE WU TL UT SPP rA HL PT A UNTO DES FER IERI AMANO The 2SJ180 P channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source As the MOS FET has low on state resistance and excellent switching characteristics it is suitable for driving actuators such as motors relays and solenoids OUTLINE DIMENSIONS Unit mm 7 0 1 2 FEATURES Directly driven by Cs having a 5 V power supply Has low on state resistance 1 5 Q Vcs 4 0 V Ip 0 5A Rpsion 1 0 2 MAX Vgs 10 V 1 0 5 A Voltage drive at logic level Vgs 4 V is possible Bidirectional zener diode for protection is incorporated in between the gate and the source Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source a TZ2. 100 5 Drain to Source Voltage V 0 01 DRAIN CURRENT vs DRAIN TO SOURCE VOLTAGE h2 Pulse measurement LU ELLE dem 10 or UEC Yl pe 0 0 5 10 15 20 25 30 3 5 Vps Drain to Source Voltage V ID Drain Current A 5 d AB 10 TRANSFER CHARACTERISTICS VDS 10V Pulse measurement 2 ae a A per E oT HE a HMM NE fane E Q Cd COS ooi FH D HiF 000011 Forward Transfer Admittance S Vas Gate to Source Voltage V FORWARD TRANSFER ADMITTANCE vs DRAIN CURRENT Vps 10V Pulse measurement TU 0 01 0 005 0 01 0 03 0 1 0 3 RDS on Drain to Source On State Resistance Q Ip Drain Current DRAIN TO SOURCE ON STATE RESISTANCE vs DRAIN CURRENT 3 0 2 5 2 0 N on LA 10 T7 cL LE AL it e 0 01 0 03 0 1 0 3 1 Ip Drain Current A VGs 4V Pulse measurement GATE TO SOURCE CUTOFF VOLTAGE vs CHANNEL TEMPERATURE Vps 10V VGS off Gate Cut Off Voltage V Tch Channel Temperature DRAIN TO SOURCE ON STATE RESISTANCE vs GATE TO SOURCE VOLTAGE RpS on Drain to Source On State Resistance Q Vas Gate to Source Voltage V DRAIN TO SOURCE ON
3. STATE RESISTANCE vs DRAIN CURRENT vs 1v A LIII 2 Pulse measurement 1 ER Ta 150 C Hy H pass E L Se med RDS on Drain to Source On State Resistance Q ip Drain Current A DRAIN SOURCE ON STATE RESISTANCE vs CHANNEL TEMPERATURE RDS on Drain to Source On State Resistance 0 150 Tch Channel Temperature SWITCHING CHARACTERISTICS 1000 E E E E E a E td on tr td off tf Switching Time ns Ip Drain Current mA ISp Reverse Drain Current mA SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS DUT RG PG r 1 us Duty Cyclex 1 RL Ciss Coss Crss Capacitance pF 1000 CAPACITANCE vs DRAIN TO SOURCE VOLTAGE SE Rom 4 A 4 ete aril 100 Fe Coss HH Et sr ar BS Ot A L ae ee 4H MHCHHNE zak FE A 5 6 Soe se eee ee eee Se Oe 0 a 1 ERBEN Ft lt TH E E 1 0 1 0 3 10 VDS Drain to Source Voltage V SOURCE TO DRAIN DIODE FORWARD VOLTAGE Vas EL 0 Pulse measurement 100 10 03 04 0 5 0 VsDp Source to Drain Voltage V Gate Volt
4. T gt QUALITY GRADE E Standard 1 Gate Drain D 2 Drain Please refer to Quality grade on NEC Semiconductor Devices Docu 3 Source ment number 1209 published by NEC Corporation to know the specification of quality grade on the devices and its recommended Gate G applications 5 Diode in the figure is the parasitic diode ABSOLUTE MAXIMUM RATINGS 25 C Document No TC 2318 7776 Date Published April 1991 NEC Corporation 1991 Printed in Japan ELECTRICAL CHARACTERISTICS 25 RiseTime te 80 de Turn Off Delay Time Fall Time TYPICAL CHARACTERISTICS 25 C DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA ERNE o 9 N no E 5 L 79 Case Temperature C TOTAL POWER DISSIPATION vs AMBIENT TEMPERATURE 2 E 9 p a S a Ta Ambient Temperature C 2SJ180 CONDITIONS VGS on 4 V Rg 10 2 Vpp 5 V FORWARD BIAS SAFE OPERATING AREA Pt ms Soe DEDE a ON poe ESAE EE m RS aii ae LIE Jii EE a ee EN o 0111 8 EEE ee E EC Ee p T LE AEA dE E 10 30
5. age Wave form Drain Current Wave form 2SJ180 100 250180 RECOMMENDED SOLDERING CONDITIONS Solder this product under the following recommended conditions For soldering methods or soldering conditions other than those recommended in the table please consult our NEC salespeople Insert type Soldering method Soldering conditions Recommended condition code Solder bath temperature 260 C max Wave solderi ina ti are spen Soldering time 10 sec max 252180 MEMO No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation NEC Corporation assumes no responsibility for any errors which may appear in this document NEC corporation does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device No license either express implied or otherwise is granted under any patents copyrights or other intellectual property rights of NEC Corporation or others The devices listed in this document are not suitable for use in the field where very high reliability is required including but not limited to aerospace equipment submarine cables unclear reactor control systems and life support systems If customers intend to use NEC devices for above applications or th
6. ose inted to use Standard or Special quality grade NEC devices for the applications not intended by NEC please contact our sales people in advance Application examples recommended by NEC Corporation Standard Data processing and office equipment Communication equipment terminal mobile Test and Measurement equipment Audio and Video equipment Other consumer products etc Special Automotive and Transportation equipment Communication equipment trunk line Train and Traffic control devices industrial robots Burning control systems antidisaster systems anticrime systems etc
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NEC 2SJ180 handbook