HITACHI 2SJ176 handbook
Contents
1. Drain Source Breakdawn Voltage Gate Source Voltage Gate Source Leak Current n Zero Gate Voltage Drain Current 12 Gate Source Cutoff Voltage e Static Drain on State Resistance Forward Transfer Admittance mieie a Capacitance ao a o e e a Output Capacitance 10 0 r se ransfer Capacitance Turn on Delay Time m iE Rise Time t l 4 o Ri 3 750 Delay Time Fall Time 1 Body Drain Diode Forward Voltage Vor 15 Vas 0 Body rain Diode Tp I5A l 230 ns 50 Reverse Recovery Time amr Pulse Test See characteristic curves 25J173 l 4 i L urrent Normalized ransiem herma Impedance 2221 MAXIMUM SAFE OPERATION AREA Drain to Sourcer Yolage Fps W NORMALIZED TRANSIENT THERMAL IMPEDANCE VS PULSE WIDTH T 4 AN 221111111 eE i ii a Hi ii E i i 250 1 82. 253176 SILICON P CHANNEL MOS FET HIGH SPEED POWER SWITCHING 9 FEATURES Low High Speed Switching Low Drive Current 4 VY Gate Drive Device Can be driven from 5 V source Suitable for Motor Drive DC DC Converter Power Switch and Solenoid Drive ABSOLUTE MAXIMUM RATINGS 25 AEE Gale Drain Source 220 Dimensions POWER 5 TEMPERATURE Symbol Rating m E I aaa Maa uH M Drain Source Voltage Voss 60 Gate Souri Voltage Fess 20 Drain Current 1 15 Drain Current Body Drain Diode ooo p dogr Z Reverse Drain Current E Chanine Dissipati n 5 Channel Tumae 150 o T F anaE Temperature o Targ erm l 150 _ _ ___ 20 5 510 65 duty 190 Value at 2576 Case Temperature 10 ELECTRICAL CHARACTERISTICS 25 Symbol Tesi Condition min typ i max Unit 0 Fe 16 0 50 Decimi s iiia 10 Is 8A Fgm 4V 10
3. 100r lm 10m 10m 1 10 Widih FPW 5 gt 25 176
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HITACHI 2SJ176 handbook