SEMITOP SK 10 BGD 065 ET Data Sheet
Contents
1. SK 10 BGD 065 ET Absolute Maximum Ratings T 25 C unless otherwise specified Symbol Conditions Values Units IGBT Inverter Vege 600 lc T 25 80 C 17 11 IcRM lerm 2 X lgnog tp 1 ms Vees T 25 80 C SEMITOP 3 A ens 1 phase bridge rectifier Reclifior 3 phase bridge inverter RRM F S t 10ms sin 180 T 25 C SK 10 BGD 065 ET R to 40 ms sin 180 7 25 C Target Data Terminals 10s 40 125 Features AC 1 min 1s 2500 3000 e Compact design e One screw mounting Characteristics T 25 C unless otherwise specified o ame eise Symbol Conditions min typ max Units IGBT Inverter direct copper bonded alumium Versa lc 6A T 25 125 C 2 2 3 oxide ceramic DCB V Vor Vae lc 0 5 mA 4 e Ultrafast NPT technology IGBT vina T E 25 C 125 C 1 2 1 1 e CAL Technology FWD n T 25 C 125 C 133 183 e Integrated NTC temperature Voge 25 Vg 0 V f 1 MHz 0 5 sensor Veg 25 Vee OV f 1 MHz 0 1 Vcg 25 Vee 0 V f 1 MHz 0 1 Typical Applications e Inverter under following conditions Voc 300 V Veg 15 V lc 6A T 125 C Reon R inductive load Diode Inverter Ve Vec l 6A Tj 7 25 125 C ViTo T 25 C 125 C ry T 25 C 125 C Fits per diode under following conditions l 6A Vk 300 V Voge OV T 125 C digg 170 A us lp 15A T 2 25 C T 150 C2. T 150 C per diode Temperatur sensor R 5 96 T 25 100 C 5000 493 ts 11 04 2007 DIL by SEMIKRON SK 10 BGD 065 ET UL RecognizedFile Dimensions in mm no E 63532 90 Yoo o RENTAL Bi 17 6 23 2929 262 Q8 Ct TOERE DW ERE E aaa E ee a MAN S pe NT Case T61 This is an electrostatic discharge sensitive device ESDS international standard IEC 60747 1 Chapter IX This technical information specifies semiconductor devices but promises no characteristics No warranty or guarantee expressed or implied is made regarding delivery performance or suitability 11 04 2007 DIL by SEMIKRON
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SEMITOP SK 10 BGD 065 ET Data Sheet