TOSHIBA 1SV229 Manual
Contents
1. E 1SV 2298 1715 TOSHIBA 15229 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV229 VCO FOR UHF BAND RADIO Unit in mm e Ultra Low Series Resistance 0 20 e Useful for Small Size Set CATHODE MARK MAXIMUM RATINGS Ta 25 C CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Junction Temperature a Storage Temperature Range 55 125 C Weight 0 0042 ELECTRICAL CHARACTERISTICS Ta 25 C Reverse Voltage __ __ __ 15 TCV Revere Comet fg Capacitance Ciov_ VR 10V f 1MHz _ 55 6 65 pF maa Meal P20 Series Resistance sts ___ _ 02 04 9 Marking To TOSHIBA is continually working to improve the quality and the reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibilit of the buyer when utilizing TOSHIBA products to observe standards of safety and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications Also please keep in mind the precautions and conditions set forth in the TOSHIBA Semicon2. ductor Reliability Handbook The information contained herein is presented only as a guide for the ay eal of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others The information contained herein is subject to change without notice 1997 05 08 1 2 TOSHIBA 1SV229 IR VR HHHH es ee eee ee _______ CAPACITANCE Cy pF REVERSE CURRENT Ip A REVERSE VOLTAGE VR oe A DD DE EAA rs VR f 470MHz 1 ae PN ON SERIES RESISTANCE rg 0 SERIES RESISTANCE rg 0 1 3 5 10 20 100 300 500 1000 2000 REVERSE VOLTAGE FREQUENCY f MHz Ta 25 C 6 1 NO C 25 C 100 CAPACITANCE CHANGE RATIO AMBIENT TEMPERATURE 1997 05 08 2 2
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