TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 handbook
Contents
1. Common source Common source Ta 25 C Ta 25 C Pulse test Pulse test z z Q g g o D 5 5 oO oO E K g Q Q Drain source voltage Vps V Drain source voltage Vps V Common source Common source Vps 10 V 2 Ta 25 C Pulse test Pulse test T 7p T Q gt Q o D z s 9 gt 3 8 5 S 3 a S Q Gate source voltage Ves V Gate source voltage Ves V Yal ID Rps ON ID 100 a 50 30 a gt Ta 55 C S S s g 25 2 a S 10 LE z 2 100 G 5 iz g E 3 9 2 D Y E E 5 5 a Common source Common source C 0s Vps 10 V Ta 25 C Pulse test Pulse test 0 3 3 0 1 0 3 0 5 1 g 5 10 30 50 0 1 0 3 05 1 3 5 10 30 50 Drain current Ip A Drain current Ip A 4 2002 04 05 TOSHIBA Drain source ON resistance RDS ON MQ pF Capacitance C w Pp Drain power dissipation Rps ON Ta 25 Common source Pulse test 20 ID 11 A 5 5 A 2 5A 15 VGS 4 5 V 10 ID 11 A 5 5 A 2 5 A 5 10 0 80 40 0 40 80 120 160 Ambient temperature Ta C Capacitance Vps 500002. 25 4 x 25 4 x 0 8 S E 25 4 x 25 4 x 0 8 L_ unit mm unit mm a b Note 3 Vpp 24 V Teh 25 C initial L 0 2 mH RG 25 Q I R 11 A Note 4 Repetitive rating pulse width limited by maximum channel temperature Note 5 o on lower right of the marking indicates Pin 1 X shows lot number year of manufacture last decimal digit of the year of manufacture month of manufacture January to December are denoted by letters A to L respectively 2 2002 04 05 TOSHIBA TPCS8104 Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition Ip 10 mA Vas 0V ST Drain source breakdown voltage V BR DSx_ pb 10 mA Ves 20 V Gate threshold voltage Vps 10 V Ip 1 mA Ves 4 V Ip 5 5 A Ves 10 V Ip 5 5 A Drain source ON resistance RDS ON Input capacitance Ciss Reverse transfer capacitance Output capacitance Turn ON time Switching time Turn OFF time Duty lt 1 tw 10 us Total gate charge gate source plus gate drain Vpp 24 V Ves 10 V Gate source charge 1 Ip 11A Gate drain miller charge aa Source Drain Ratings and Characteristics Ta 25 C Characteristics Symbol Test Condition N gt gt wo 3 2002 04 05 TOSHIBA TPCS8104
3. 30000 10000 5000 Ciss 3000 1000 500 Coss Common source Crss 300 ves 0V f 1 MHz Ta 25 C 100 0 1 0 3 1 3 10 30 100 Drain source voltage Vps V Pp Ta 1 Device mounted on a glass epoxy board a Note 2a 2 Device mounted on a glass epoxy board b Note 2b Ambient temperature Ta C A IDR Drain reverse current Vv Gate threshold voltage Vth Vv Drain source voltage Vps TPCS8104 Common source Ta 25 C Pulse test 0 0 2 0 4 0 6 0 8 1 Drain source voltage Vps V Common source Vps 10 V ID 1 mA Pulse test Ambient temperature Ta C Dynamic Input Output Characteristics Yn oO gt o D 2 Common source A 2 ID 11 A G Ta 25 C 8 d Pulse test oO Total gate charge Qg nC 2002 04 05 TOSHIBA TPCS8104 lth tw 1000 1 Device mounted on a glass epoxy S board a Note 2a 2 Device mounted on a glass epoxy 2 c board b Note 2b a t 10s 1 o 100 Q E bd no D Q D 10 e ao wn g no 8 o E e z Sing
4. 4578 TPC S8104 Ny FA TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U MOS IV Lithium lon Battery Applications Notebook PC Applications Portable Equipment Applications Unit mm s Small footprint due to small and thin package e Low drain source ON resistance RDS ON 8 1 mQ typ e High forward transfer admittance Yfs 23 S typ e Low leakage current Ipgs 10 pA max Vps 30 V e Enhancement mode Vth 0 8 to 2 0 V Vps 10 V ID 1 mA Maximum Ratings Ta 25 C Characteristics Symbol Drain current JEDEC Drain power dissipation t 10 s Note 2a JEITA Single pulse avalanche energy Weight 0 035 g typ Note 3 Avalanche current current Storage temperature range 55 to 150 Note For Note 1 Note 2 Note 3 and Note 4 please refer to the next page This transistor is an electrostatic sensitive device Please handle with caution 1 2002 04 05 TOSHIBA Thermal Characteristics Characteristics Symbol TPCS8104 Thermal resistance channel to ambient R t 10s Note 2a th ch a Thermal resistance channel to ambient R t 10s Note 2b th ch a Marking Note 5 Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b FR 4 FR 4
5. k etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change without notice 7 2002 04 05
6. le pulse 0 1 0 001 0 01 0 1 1 10 100 000 Pulse width tw s Safe Operating Area 100 ID max pulse 1 ms 10 ms 10 Q S 1 5 S amp g Q 0 1 Single pulse Ta 25 C Curves must be derated linearly with increase in temperature VDSS max 0 01 0 01 0 1 1 10 00 Drain source voltage Vps V 6 2002 04 05 TOSHIBA TPCS8104 RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handboo
Download Pdf Manuals
Related Search
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U MOS IV) TPCS8104 handbook