TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 handbook
Contents
1. 58102 9 58102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U MOS II TPCS8102 Lithium lon Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain source ON resistance RDS ON 16 mQ typ High forward transfer admittance 17 S typ Low leakage current Ipsg 10 pA max Vps 20 V Enhancement mode Vth 0 5 1 2 V Vps 10 V Ip 200 pA Maximum Ratings Ta 25 C Characteristics Symbol Bep 5 Drain current Drain power dissipation t 105 Note 2b Single pulse avalanche energy Note 3 46 8 mJ Avalanche current current ET M avalanche energy Note 2a Note 4 Channel temperature Channel temperature Storage temperature range 55 to 150 Note For Note 1 Note 2 Note 3 and Note 4 please refer to the next page Drain power dissipation t 10 Note 2 1 5 This transistor is an electrostatic sensitive device Please handle with caution Unit mm tt 0 6 0 2 1 DRAIN 5 DRAIN 2 3 SOURCE 6 7 SOURCE 4 GATE 8 DRAIN JEDEC JEITA TOSHIBA 2 3R1B Weight 0 035 g typ Circuit Configuration 2002 05 17 TOSHIBA Thermal Characteristics Characteristics Symbol TPCS8102 Thermal resistance channel to ambient R t 10 s Note 2a th ch a Thermal resistance channel to ambient R t 10 s2. L lt S I m E a 1 1 0 1 0 3 0 5 3 5 10 80 0 1 0 3 05 1 3 5 10 30 DRAIN CURRENT Ip A DRAIN CURRENT Ip A 4 2002 05 17 TOSHIBA DRAIN SOURCE ON RESISTANCE Rps ON mQ CAPACITANCE C pF W DRAIN POWER DISSIPATION Pp 40 RDS ON Ta COMMON SOURCE PULSE TEST 0 40 80 120 160 AMBIENT TEMPERATURE Ta CAPACITANCE VDS 10000 5000 Ciss 3000 Coss 1000 500 Crss 309 Ta 25 C f 1MHz H Ves 0V 100 0 1 0 3 05 3 5 10 30 DRAIN SOURCE VOLTAGE Vps V EAE 4 Pp Ta 1 DEVICE MOUNTED ON A GLASS EPOXY BOARD a NOTE 2a 2 DEVICE MOUNTED ON A GLASS EPOXY BOARD b NOTE 2b 0 40 80 120 160 200 AMBIENT TEMPERATURE C DRAIN REVERSE CURRENT Ipg A V GATE THRESHOLD VOLTAGE Vth V DRAIN SOURCE VOLTAGE Vps TPCS8102 IpR Vps 70 0 2 0 4 0 6 COMMON SOURCE Ta 25 C PULSE TEST 0 8 1 0 12 DRAIN SOURCE VOLTAGE V COMMON SOURCE Vps 10V Ip 200 uA PULSE TEST AMBIENT TEMPERATURE C DYNAMIC INPUT OUTPUT COMMON SOURCE Ip 6A 25 C PULSE TEST TOTAL GATE CHARGE Qg nC GATE SOURCE VOLTAGE Vas V
3. 2002 05 17 TOSHIBA DRAIN CURRENT Ip A 100 TPCS8102 fth tw 500 1 DEVICE MOUNTED ON A GLASS EPOXY 300 BOARD a NOTE 2a 2 4 2 DEVICE MOUNTED ON A GLASS EPOXY i ido BOARD b NOTE 2b x 1 50 i e 30 z 0 2 10 5 FZ ax 3 Nw I xz 1 gt ar 0 5 z 0 3 SINGLE PULSE 0 1 1m 10m 100 m 1 10 100 1000 PULSE WIDTH ty s SAFE OPERATING AREA Ip MAX PULSE 0 1 0 05 0 03 FT 01 0 01 0 08 01 03 1 3 10 30 X SINGLE PULSE Ta 25 C i AVALANCHE ENERGY Eag mJ Curves must be derated linearly with increase in temperature Vpss DRAIN SOURCE VOLTAGE Vps V 100 Teh 25 C Initial 50 75 100 125 150 Vpp 16V L 1 0mH TEST CIRCUIT WAVE FORM Peak IAR 6A RG 25 0 E zm 1 p aT ARS ae Bypss VDD 2002 05 17 TOSHIBA TPCS8102 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually working to impro
4. Note 2b th ch a Marking Note 5 Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b FR 4 FR 4 25 4 x 25 4 x 0 8 25 4 x 25 4 x 0 8 unit mm eS unit mm ui Note 3 Vpp 16 V Tehn 25 C initial L 1 0 mH Rg 25 Q lag 6 0A Note 4 Repetitive rating pulse width limited by maximum channel temperature Note 5 O on lower right of the marking indicates Pin 1 X shows lot number year of manufacture last decimal digit of the year of manufacture month of manufacture January to December are denoted by letters A to L respectively 2002 05 17 TOSHIBA TPCS8102 Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition on Vos 20V ves 0v va Drain source breakdown voltage Vemoss In tomAVessov 20 Ip 10 mA Veg 12 V 8 98 P m p ne s Input capacitance Ciss Reverse transfer capacitance o o Output capacitance Turn ON time Switching time Fall time Duty 1 tw 10 us Turn OFF time w H Total gate charge gate source plus gate drain Gate source charge
5. combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others The information contained herein is subject to change without notice 7 2002 05 17
6. B uM NBD SONGS Te pese Gate drain miller charge Source Drain Ratings and Characteristics 25 C Characteristics Symbol Test Condition N 99 o 5 O N RN N O A E EE 2 2 2 79 8 O Drain reverse Pulse Note 1 current Forward voltage diode Vos IDR 6A Ves 0V IDR 6A Ves 0V A Vas 0V 3 2002 05 17 TOSHIBA TPCS8102 COMMON SOURCE Ta 25 C PULSE TEST COMMON lt 2 SOURCE Ta 25 C B PULSE TEST E 2 2 E E 5 5 o o 5 5 a a 0 24 22 23 24 5 DRAIN SOURCE VOLTAGE Vps V DRAIN SOURCE VOLTAGE Vps V COMMON SOURCE COMMON SOURCE Vps 10V Ta 25 C PULSE TEST PULSE TEST 5 a a gt 2 E amp 21 ee o t 2 Z 5 5 Nn a z lt ei a DRAIN SOURCE VOLTAGE Vpg V GATE SOURCE VOLTAGE Vgs V IY s Ip RDS ON Ip 100 1 COMMON SOURCE i COMMON SOURCE z Ta 25 C Ta 55 C 25 C lt 50 PULSE TEST HAE 5 50 PULSE TEST Z S 80 B 9 100 2 z 21 10 S 1 c Zs a Fu 5 E 5 p 5 5 TEH 52 An dun
7. ve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U MOS II) TPCS8102 handbook