TOSHIBA TPC8210 handbook
Contents
1. instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change without notice 7 2003 02 182. l BS o VDS o gt gt E 15 15 2 o o 2 E gt 12 9 gt S g o 5 12 s z E 10 10 d o a 3 ce 6 S VDD 24V E a a 5 5 0 0 0 20 40 60 80 100 Ambient temperature Ta C Total gate charge Qg nC 5 2003 02 18 TOSHIBA A Ip Drain current fth tw 1000 4 Single pulse 3 2 S 1 7 100 Q E oz 0 tL 10 KI o c E di D E E N Device mounted on a glass epoxy board a Note 2a T 1 1 Single device operation Note 3a E 2 Single device value at dual operation Note 3b o Device mounted on a glass epoxy board b Note 2b z 3 Single device operation Note 3a 4 Single device value at dual operation Note 3b t 10s 0 1 0 001 0 01 0 1 1 10 100 1000 Pulse width ty S Safe operating area Single pu Ta 25 C Curves must be dera linearly with increase in temperature Drain source voltage Vps V TPC8210 2003 02 18 TOSHIBA TPC8210 RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and rel
3. 5 C Tc 100 C S 30 10 a gt o wo 2 SE E z E OZ 10 g 25 C go g 38 2 1 Px K E p 6 4 Common source o Vps 10V zi Pulse test 0 1 1 0 1 1 10 100 1 3 10 30 100 Drain current Ip A Drain current Ip A 4 2003 02 18 TOSHIBA TPC8210 IpR Vos E 100 E z S Q 5 o D D E o 8 S 3 E 5 10 Ves 0V ome o o 8 2 Zz o o i g g E 3 S 9 a Z Common source Common source me Pulse test Ta 25 C a Usexes Pulse test 80 40 0 40 80 120 160 0 0 2 0 4 0 6 0 8 1 1 2 Ambient temperature Ta C Drain source voltage Vps V Capacitance Vps 10000 Ciss c E D 1000 gt 8 Sin e Crss z S ke o o 100 3 O Common source o Common source Es Vos 10V Vos 10V o 5d poen ID 1 mA Pulse test Pulse test 10 0 1 1 10 100 Drain source voltage Vps V Ambient temperature Ta C Dynamic input output characteristics 30 30 1 Device mounted on a C mriomso rc glass epoxy board a gt Ta 25 C Note 2a 25 a 25 gt cet 2 Device mounted on a x lp 8A x lass epoxy board b a g oxy o Pulse test o A Note 2b Q Note 2b 20 VDD 24 V 20 E s
4. AS 78 TPC 8210 ge TOSHIBA TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U MOS III Lithium lon Battery Applications Portable Equipment Applications BLU Notebook PC Applications Low drain source ON resistance RDS ON 11 mQ typ High forward transfer admittance Yfs 13 S typ Low leakage current Ipsg 10 pA max Vps 30 V Enhancement mode Vth 1 3 to 2 5 V Vps 10 V ID 1 mA 0 595TYP Maximum Ratings Ta 25 C Characteristics Symbol Drain current Single device operation Pp 1 1 5 Note 3a 4 GATE GATE 5 6 DRAIN SOURCE 7 8 DRAIN Drain power dissipation t 10 s Single device value Note 2a at dual operation Note 3b Weight 0 08 g typ Single device operation dissipation Note 3a t 10 s Single device value Circuit Configuration Drain power Note 2b at dual operation Note 3b Single pulse avalanche energy Note m Avalanche current Repetitive avalanche energy Single device value at dual operation EAR 0 1 mJ Note 2a 3b 5 Storage temperature range 55 to 150 Note For Note 1 Note 2 Note 3 Note 4 and Note 5 please refer to the next page This transistor is an electrostatic sensitive device Please handle with caution 1 2003 02 18 TOSHIBA TPC8210 Thermal Characteristics Characteristics Symbol EXC Single device operation R Note 3a
5. acteristics Symbol Test Condition Drain source breakdown voltage Drain source ON resistance reson vase vios epe Forward transfer admittance Vps 10V Ip 4A pte Input capacitance Ciss Reverse transfer capacitance Vps 10 V Ves 0 V f 1 MHz Output capacitance Rise time Switching time E ad CNN plus gate drain Gate drain miller charge EM Source Drain Ratings and Characteristics Ta 25 C Characteristics Symbol Test Condition Drain reverse Pulse Note 1 current 3 2003 02 18 TOSHIBA TPC8210 Ip Vps 10 a ommon source s Fi 2 Ta 25 C 10 Pulse test 8 2 9 gt 3 2 1 lt a a 6 t t e e 2 6 8 8 4 lt g g 25 2 24 2 3 0 VGS 2 2 V 0 0 2 0 4 0 6 0 8 1 0 Drain source voltage Vps V Drain source voltage Vps V Common source Common source Vps 10V Ta 25 C Pulse test S Pulse test z a gt Q o D z S o o P gt 3 8 S 5 o B P e Gate source voltage Ves V Gate source voltage Mes V lYtsl ID Rps ON ID 100 100 pP Common source B Ta 25 C AE Pulse test D o gt 5
6. iability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control
7. th ch a 1 Thermal resistance channel to ambient t 10 s Note 2a Single device value at dual operation Rth ch a 2 Note 3b Single device operation R Note 3a th ch a 1 Thermal resistance channel to ambient t7 10s Note 2b Single device value at dual operation Rth ch a 2 Note 3b Marking Note 6 Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 FR 4 FR 4 25 4 x 25 4 x 0 8 25 4 x 25 4 x 0 8 unit mm unit mm B b a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b Note 3 a The power dissipation and thermal resistance values are shown for a single device During single device operation power is only applied to one device b The power dissipation and thermal resistance values are shown for a single device During dual operation power is evenly applied to both devices Note 4 Vpp 24 V Tehn 25 C initial L 1 0 mH RG 25 Q IaR 8A Note 5 Repetitive rating pulse width limited by maximum channel temperature Note 6 eon lower left of the marking indicates Pin 1 X Weekly code Three digits Week of manufacture 01 for first week of year continues up to 52 or 53 Year of manufacture One low order digits of calendar year 2 2003 02 18 TOSHIBA TPC8210 Electrical Characteristics Ta 25 C Char
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TOSHIBA TPC8210 handbook