TOSHIBA TPC8107 handbook
Contents
1. rin tw 1000 1 Device mounted on a glass epoxy board a Note 2a 2 o 2 Device mounted on a glass epoxy board b O Note 2b S 1 t 10s 3 100 Q Em oS O ee 10 D Qe cr ne oO N T 1 Oo Zz Single pulse 0 1 0 001 0 01 0 1 1 10 100 1000 Pulse width tw S Safe operating area 100 ID max pulse 1 ms 10 ms 10 A 0 1 Single pulse Ta 25 C Curves must be derated linearly with increase in temperature VI max 0 01 DSS 0 01 0 1 1 10 100 Drain source voltage Vps V TPC8107 2003 02 20 TOSHIBA TPC8107 RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to2. Note 5 Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b FR 4 FR 4 25 4 x 25 4 x 0 8 25 4 x 25 4 x 0 8 EET i unit mm unit mm a b Note 3 Vpp 24 V Tech 25 C initial L 1 0 mH RG 25 Q lAR 13 A Note 4 Repetitive rating pulse width limited by maximum channel temperature Note 5 eon lower left of the marking indicates Pin 1 X Weekly code Three digits Week of manufacture 01 for first week of year continues up to 52 or 53 Year of manufacture One low order digits of calendar year 2 2003 02 20 TOSHIBA TPC8107 Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition Drain source breakdown voltage Gate threshold voltage Vps 10 V Ip 1 mA Ves 4 V Ip 6 5 A Ves 10 V Ip 6 5 A Drain source ON resistance RDS ON Input capacitance Ciss Reverse transfer capacitance Output capacitance Turn ON time Switching time Turn OFF time EN Duty lt 1 tw 10 us Total gate charge gate source plus gate drain Vpp 24 V Ves 10 V Gate source charge 1 Ip 13A Gate drain miller charge Qga Source Drain Ratings and Characteristics Ta 25 C Characteristics Symbol Test Condition n oa N
3. property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implica
4. 3 2003 02 20 TOSHIBA Common source Ta 25 C Pulse test T Oo T L 5 o g Q Drain source voltage Vps V Common source Vps 10 V Pulse test T Oo T L2 5 o S g a Gate source voltage Vas V lYtsl ID a 100 N Ka 25 30 Ta 55 C 2 100 10 je 2 e S 3 2 1 2 Common source VDS 10 V Pulse test 0 3 0 1 0 3 1 3 10 30 100 Drain current Ip A Drain source ON resistance A Drain current Vv Drain source voltage Vps ME Ros on TPC8107 Common source Ta 25 C Pulse test Drain source voltage Vps V Common source Ta 25 C Pulse test Gate source voltage Vas V Rps ON ID 100 30 VGS 4V 40 GS 10 3 1 Common source Ta 25 C Pulse test 0 3 0 1 0 3 1 3 10 30 100 Drain current Ip A 2003 02 20 TOSHIBA Drain source ON resistance pF Capacitance C w Pp Drain power dissipation Common source se test Rps ON Ta 80 120 Ambient temperature Ta C
5. AS iATPC 810 7H PS TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U MOSIM Lithium lon Battery Applications Notebook PC Applications Portable Equipment Applications Unit mm e Small footprint due to small and thin package e Low drain source ON resistance RDS ON 5 5 mQ typ e High forward transfer admittance Yfs 31 S typ e Low leakage current Ipsg 10 uA max Vps 30 V e Enhancement mode Vth 0 8 to 2 0 V Vps 10 V Ip 1 mA Maximum Ratings Ta 25 C Characteristics Symbol 1 2 3 SOURCE 4 GATE Gate source voltage 5 6 7 8 DRAIN Drain current Pulse Note 1 Drain power dissipation t 10s JEITA TOSHIBA 2 6J1B Drain power dissipation t 10s Weight 0 080 g typ Note 2b Single pulse avalanche ener IRP 3y Eas 219 mJ Note 3 Avalanche current Repetitive avalanche energy 8 7 6 5 Ear 0 19 mJ Note 2a Note 4 Note 2a Circuit Configuration H gt Note For Note 1 Note 2 Note 3 and Note 4 please refer to the a A next page This transistor is an electrostatic sensitive device Please handle with caution 1 2003 02 20 TOSHIBA TPC8107 Thermal Characteristics Characteristics Symbol a Thermal resistance channel to ambient Rth ch a t 10s Note 2a Thermal resistance channel to ambient Rth ch a t 10s Note 2b Marking
6. Capacitance Vps 10000 Ciss 3000 1000 Coss Crss 300 Common source 100 VGS OV f 1MHz Ta 25 C 30 0 1 0 3 1 3 10 30 100 Drain source voltage Vps V Pp Ta 2 0 1 Device mounted on a 1 glass epoxy board a Note 2a 1 6 2 Device mounted on a glass epoxy board b Note 2b t 10s 1 2 2 0 8 0 4 0 0 40 80 120 160 200 Ambient temperature Ta C A IDR Drain reverse current v Gate threshold voltage Vth TPC8107 IDR VDS 100 5 10 3 10 1 VGS O0V 1 Common source Ta 25 C Pulse test 0 1 0 0 2 0 6 0 8 1 0 1 2 Drain source voltage Vps V Common source VDS 10 V ID 1 mA Pulse test Ambient temperature Ta C Dynamic input output characteristics Common source ed ID 13A zZ Ta 25 C on Pulse test a gt o D 8 9 gt 9 9 J 9 g Q 80 120 160 200 gate charge Qg nC 2003 02 20 Vv Gate source voltage Ves TOSHIBA A ID Drain current
7. tion or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change without notice 7 2003 02 20
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TOSHIBA TPC8107 handbook