TOSHIBA TPC8102 handbook
Contents
1. 50 30110 MAX PULSE lms 10 10 ms X 1 5 8 i 0 5 0 3 M rl X SINGLE PULSE 01 Ta 25 C Curves must be derated 00 5 1 MM linearly with increase in 00 3 temperature E Vpss MAX 0 01 0 01 0 03 01 03 1 3 10 30 DRAIN SOURCE VOLTAGE V PULSE WIDTH tw 5 AVALANCHE ENERGY Eas md 25 50 75 100 125 7 150 CHANNEL TEMPERATURE INITIAL Teh CC 100 TEST CIRCUIT WAVE FORM Ten 25 C Initial 1 55 Peak IAR 6A RG 250 EAS 9 5 LP gvpss VDD Vpp 24V L 1 0mH 6 2002 01 18 TOSHIBA TPC8102 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also p2. 3 2002 01 18 TOSHIBA DRAIN CURRENT Ip A DRAIN CURRENT Ip A FORWARD TRANSFER ADMITTANCE IY 0 0 0 2 0 4 0 6 0 8 10 COMMON SOURCE Vps 10V PULSE TEST GATE SOURCE VOLTAGE Vgs V Ip DRAIN CURRENT Ip DRAIN SOURCE ON RESISTANCE DRAIN CURRENT Ip A DRAIN SOURCE VOLTAGE Vps V RDS ON mQ TPC8102 COMMON SOURCE Ta 25 C PULSE TEST COMMON SOURCE Ta 25 C PULSE TEST GATE SOURCE VOLTAGE Vgg RDS ON ID 500 COMMON SOURCE 300 Ta 25 C PULSE TEST vir a 100 Vas 4V 50 10 30 10 5 3 0 1 0 3 1 8 10 30 DRAIN CURRENT Ip A 2002 01 18 TOSHIBA TPC8102 RDS ON Ta DRAIN SOURCE ON RESISTANCE RDS ON mQ DRAIN REVERSE CURRENT Ipg A 70 02 04 06 0 8 1 0 1 14 AMBIENT TEMPERATURE DRAIN SOURCE VOLTAGE Vps V CAPACITANCE VDS 10000 HE 5 COMMON SOURCE 5000 n 3 du
3. AH TPC 810244 v fS TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type rr MOSVI Lithium lon Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package Low drain source ON resistance RDS ON 34 mQ typ High forward transfer admittance Yfs 9 S typ Low leakage current Ipss 10 pA max Vps 30 V 0 595 1 27 Enhancement mode Vth 0 8 2 0 V Vps 10 V ID 1 mA Jho 410 1 0 25 5 5MAX Maximum Ratings Ta 25 C Characteristics Symbol Bep e s Drain current 5 SOURCE GATE 8 DRAIN Drain power dissipation t 10 Note 2a TOSHIBA 2 6J1B Weight 0 080 g typ Drain power dissipation t 105 Note 2b Single pulse avalanche energy mJ Note 3 Avalanche current current Circuit Configuration ET M avalanche energy Note 2a Note 4 Channel temperature Channel temperature 6 5 EI Note For Note 1 Note 2 Note 3 and Note 4 please refer to the next page This transistor is an electrostatic sensitive device Please handle with caution 1 2 3 4 1 2002 01 18 TOSHIBA Thermal Characteristics Characteristics Symbol TPC8102 Thermal resistance channel to ambient R t 10 s Note 2a th ch a Thermal resistance channel to ambient R t 105 Note 2b th ch a Marking Note 5 T
4. lease keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others The information contained herein is subject to change without notice 7 2002 01 18
5. m M E gt 3000 RN a PULSE TEST o L 8 5 lt 1000 gt o 32521 5 500 5 8 9 goo SIT E COMMON SOURCE Vas 0V A f 1 MHz E 25 100 Ta 5 C 01 0 3 1 3 10 30 DRAIN SOURCE VOLTAGE Vpg V AMBIENT TEMPERATURE Ta C DYNAMIC INPUT OUTPUT CHARACTERISTICS Eq uum LL on T ea LA 2 1 DEVICE MOUNTED ON A GLASS EPOXY BOARD a NOTE 2a 2 DEVICE MOUNTED ON A GLASS EPOXY BOARD b NOTE 2b DRAIN SOURCE VOLTAGE Vps V GATE SOURCE VOLTAGE Vgs V DRAIN POWER DISSIPATION Pp W 0 30 40 50 0 0 40 80 120 160 200 0 10 2 AMBIENT TEMPERATURE Ta C TOTAL GATE CHARGE Qg nC 5 2002 01 18 TOSHIBA DRAIN CURRENT Ip A 1000 500 SINGLE PULSE TPC8102 rth tw rth CC W gt TRANSIENT THERMAL IMPEDANCE 1 DEVICE MOUNTED ON A GLASS EPOXY BOARD a NOTE 2a 2 DEVICE MOUNTED ON A GLASS 10m SAFE OPERATING AREA EPOXY BOARD b NOTE 2b 100m 1 10 100 1000 100
6. ype Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b FR 4 FR 4 25 4 x 254 x 0 8 25 4 x 25 4 x 0 8 Unit mm Unit mm b a Note 3 Vpp 24 V Ten 25 initial L 1 0 mH 25 Q lag 6 Note 4 Reptitve rating pulse width limited by maximum channel temperature Note 5 6 on lower left of the marking indicates Pin 1 shows Lot number year of manufacture last decimal digit of the year of manufacture month of manufacture january to december are denoted by letters A to L respectively 2 2002 01 18 TOSHIBA TPC8102 Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition Drain source breakdown voltage 5 lp7 10mA Vas 0 V Rps oN Vas 4V lp 3A Rps oN 10 Input capacitance Ciss Reverse transfer capacitance Output capacitance Switching time VDD 15V Turn off time tw 10 us Total gate charge Gate source plus gate drain Gate source charge ELM Gate drain miller charge Source Drain Ratings and Characteristics Ta 25 C Characteristics Symbol Test Condition Drain reverse Pulse Note 1 current Forward voltage diode Vos 0 6 0 A Vas 0 HH
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TOSHIBA TPC8102 handbook