TOSHIBA TPC8014-H handbook
Contents
1. 1 Device mounted on a Common source glass epoxy board a Ki Note 2a PT Ta 25 C ks ko 2 Device mounted on a e ID 11A 2 a glass epoxy board b a Note 2b a Pulse test 2 gt gt S Ke o o oor D amp 8 E 2 E E 2 8 3 fe d 9 a c d E 7 ke 4 a o 0 10 20 30 40 50 60 Ambient temperature Ta C Total gate charge Qg nC 5 2004 07 06 TOSHIBA TPC8014 th tw 1000 1 Device mounted on a glass epoxy board a Note 2a 2 g 2 Device mounted on a glass epoxy board b S Note 2b o t 10s 3 100 E 1 b Ea 22 ZO EL 10 E o c ce o o A 1 c E o zZ Single pulse 0 1 0 001 0 01 0 1 1 0 100 000 Pulse width tw S Safe operating area 100 ms ID max pluse 10 T 10 ms 5 1 3 o amp g Q 0 1 Single pulse Ta 25 C Curves must be derated linearly with increase in VDSS max temperature 0 01 0 01 0 1 1 0 100 Drain source voltage Vps V 6 2004 07 06 TOSHIBA TPC8014 RESTRICTIONS ON PRODUCT USE 032. Forward transfer admittance IYss Vps 10V lp 2 5 5A Input capacitance 3 gt gt w a apfa SI ZIS N N Reverse transfer capacitance Output capacitance Coss Turn ON time ton Switching time Fall time tf Turn OFF time toff Duty 1 ty 10 us Total gate charge Qg gate source plus gate drain Gate source charge 1 Qgs1 Vpp 24V Vas 10 V Ip 11A Gate drain miller charge Qaod oO N o o w 2 Oo Source Drain Ratings and Characteristics Ta 25 C 3 2004 07 06 TOSHIBA A Ip Drain current A Ip Drain current S Ys Forward transfer admittance Ip Vbs 20 3 4 3 3 3 5 16 4 3 2 6 8 10 3 1 12 3 0 8 2 9 2 8 27 A VGS 2 6 V 0 1 2 3 4 5 Drain source voltage Vps V Ip Common source Ves Vps 10V Pulse test 0 0 5 1 1 5 2 2 5 3 2 5 4 Gate source voltage Vas V IYss lp 55 C Tc 100 C 25 C Common source Vps 10V Pulse test 0 1 1 10 100 Drain current Ip A Drain source ON resistance Ip VOS TPC8014 Hy h T lt if s EMM TW t LW o c 5 a 0 0 2 0 4 0 6 0 8 1 0 Drain source voltage Vps V Comm
3. 0619EAA e The information contained herein is subject to change without notice e The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended for usage in general electronics applications computer personal equipment office equ
4. channel to ambient Rth ch a t 10s Note 2b Marking Note 5 Part No or abbreviation code Lot No A line indicates lead Pb free package or lead Pb free finish Note 1 Ensure that the channel temperature does not exceed 150 C Note 2 a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b FR 4 FR 4 25 4 x 25 4 x 0 8 25 4 x 25 4 x 0 8 I unit mm unit mm a b Note 3 Vpp 24 V Teh 25 C initial L 1 0 mH Rg 25Q laR 11A Note 4 Repetitive rating pulse width limited by max channel temperature Note 5 eon lower left of the marking indicates Pin 1 X Weekly code Three digits Week of manufacture 01 for the first week of a year sequential number up to 52 or 53 Year of manufacture The last digit of a year 2 2004 07 06 TOSHIBA TPC8014 Electrical Characteristics Ta 25 C Characteristics Symbol Test Condition tees Gate leakage current less Gs 16 V Vps 0 V Drain cut OFF current Ipss Vps 30 V Ves 0V l JE o wl M Si Gl P on l wo o V BR DSS lp 10 mA Veg OV Drain source breakdown voltage V BR DSX lp 10 mA Vos 20 V Gate threshold voltage Vps 10 V Ip 2 1 mA Ves 4 5 V Ip 5 5 A Drain source ON resistance Ves 10 V Ip 5 5 A
5. eig TPC8014 it hy S TOSHIB TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U MOS III TPC8014 Lithium lon Battery Applications Portable Equipment Applications Notebook PC Applications e Small footprint due to small and thin package e Low drain source ON resistance RDS ON 11 mQ typ e High forward transfer admittance Yfs 10 S typ Low leakage current IDSs 10 pA max Vps 30 V e Enhancement mode Vth 1 3 to 2 5 V Vps 10 V Ip 1 mA Maximum Ratings Ta 25 C Characteristics Symbol Drain source voltage i a n Gate source TE Drain current Pulse Note 1 Drain power dissipation t 10s Note 2a Single pulse avalanche energy Note 3 Drain power dissipation t 10s Note 2b Avalanche current Repetitive avalanche energy Note 2a Note 4 Storage temperature range 55 to 150 Note 1 Note 2 Note 3 and Note 4 See the next page This transistor is an electrostatic sensitive device Please handle with caution Unit mm 015835 y e F k BH 7 0 1 0 178105 1 2 3 SOURCE 4 GATE 5 6 7 8 DRAIN JEDEC JEITA TOSHIBA 2 6J1B Weight 0 08 g typ Circuit Configuration 8 7 6 5 1 2 3 4 2004 07 06 TOSHIBA TPC8014 Thermal Characteristics Characteristics Symbol Thermal resistance channel to ambient Rth ch a t 10s Note 2a Thermal resistance
6. ipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold under any law and regulations 7 2004 07 06
7. on source Ta 25 C c se test a gt o o o gt o 2 gt o 9 S S a Rps oN mQ Gate source voltage Vas V Rps ON Ip Common source Ta 25 C Pulse test 1 3 10 Drain current Ip 30 100 2004 07 06 TOSHIBA TPC8014 Rps ON Ta a IDR Vps 25 100 5 ID 11 5 5 2 5A DM 7 20 10 E c 8 1 BH B o 2 Ves 10V SE 45 4 5 L VGS 45V oz 5 2 8 3 e o 3 B 10 Ip 11 5 5 2 5 A 8 p X E 1 amp o g 10 a 5 2 a Common source Common source Ta 25 C Pulse test Pulse test 0 0 1 80 40 0 40 80 120 160 0 0 2 0 4 0 6 0 8 1 12 Ambient temperature Ta C Drain source voltage Vps V Capacitance Vps 10000 C Ciss E 1000 o o 8 8 5 2 Coss 5 n re 3 o Crss D a 100 o o Common source o Common source amp VDs 10V VGS 10 V ID 1mA ID 1mA Pulse test Pulse test 10 0 1 1 10 100 80 40 0 40 80 120 Drain source voltage Vps V Ambient temperature Ta C Dynamic input output characteristics
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TOSHIBA TPC8014 H handbook toshiba-tpsc