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TOSHIBA TPC6003 Manual

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1. 100 30 ID max pulsed 10 1 ms 3 10 ms RS a 1 0 3 3 Oo 0 1 g Q 0 03 0 01 Single nonrepetitive pulse Ta 25 C 0 003 Curves must be derated VDSS max linearly with increase in temperature 0 001 0 01 0 03 0 1 0 3 1 3 0 30 100 Drain source voltage Vps V 5 2002 01 15 TOSHIBA TPC6003 RESTRICTIONS ON PRODUCT USE 000707EAA e TOSHIBA is continually working to improve the quality and reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications Also please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices or TOSHIBA Semiconductor Reliability Handbook etc The TOSHIBA products listed in this document are intended f
2. 0 V amp s 0V f 1 MHz Ta 25 C 10 0 1 0 3 1 3 10 30 100 Drain source voltage VDS 1 Device mounted on a glass epoxy board a Note 2a 2 Device mounted on a glass epoxy board b Note 2b Ambient temperature Ta C 160 TPC6003 IDR Vos 100 z 30 x Q 10 E 2 3 D o 2 g 1 g g a 0 3 Common source Ta 25 C Pulse test 0 1 0 0 4 0 8 1 2 1 6 2 0 Drain source voltage VDS V Common source VDS 10V 2 ID 1mA Gate threshold voltage Vth V Drain source voltage VDS Pulse test Ambient temperature Ta C Dynamic input output characteristics Common source ID 6A 16 24 32 40 gate charge Qg nC 2002 01 15 V Gate source voltage VGs TOSHIBA TPC6003 1000 300 Device mounted on a glass epoxy board b Note 2b 100 30 Device mounted on a glass i epoxy board a Note 2a Transient Single pulse 0 001 0 01 0 1 1 10 100 000 Pulse tw s Safe operating area
3. 25 C Pulse test 0 0 1 0 2 0 3 0 4 0 5 Drain source voltage VDS V Common source VDS 10V Pulse test g g 5 D g Q 0 1 2 3 4 5 Gate source voltage Vgs V Ys ID 100 D 50 2 30 9 Ta 55 C E 5 10 5 25 C t 5 100 C gt 3 G Common source Z VDS 10V uw Pulse test 1 1 3 5 10 30 50 100 Dain current ID A Drain source on resistance A Drain current Ip Drain source voltage Vps V RDS ON mQ TPC6003 Common source Ta 25 C Pulse test Drain source voltage VDS V Vps Ves Common source Ta 25 C Pulse test Gate source voltage Vgs V Ros ON ID Drain current Ip Common source Ta 25 C Pulse test A 2002 01 15 TOSHIBA Drain source on resistance RDS ON mQ pF Capacitance C Drain power dissipation Pp Rps ON Ta 50 Common source Pulse test 40 ID 6A ID 1 5A 3A 30 Ves 4 5V 20 ID 1 5A 3A 6A VGS 10V 10 0 80 40 0 40 80 120 160 Ambient temperature Ta C Capacitance Vps 10000 3000 1000 Ciss 300 Coss 100 Crss Common source 3
4. A7 TPC 6003 1H A TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U MOSIIT TPC6003 Notebook PC Applications Portable Equipment Applications Unit mm e Low drain source ON resistance RDS ON 19 mQ typ e High forward transfer admittance Yfs 7 S typ e Low leakage current IDSS 10 pA max Vps 30 V e Enhancement model Vth 1 3 to 2 5 V VDS 10 V ID 1 mA 1 Maximum Ratings Ta 25 C Characteristics Symbol Gate source voltage source Gate source voltage Vess Note 1 EF Drain current Pulse Note 1 0 16 0 05 0 05 0 05 JEDEC Drain power ee t 5s JETA En 2a TOSHIBA 2 3T1A Drain power dissipation t 5s Weight 0 011 g typ Note 2b Avalanche current 5 Circuit Configuration Repetitive avalanche energy Note 4 mJ Repetitive avalanche energy Note 4 om 6 5 a Storage temperature range 55 to 150 Thermal Characteristics Characteristics Symbol 1 2 3 Thermal resistance channel to ambient Rip ch a Marking Note 5 t 5s Note 2a Thermal resistance channel to ambient Rth ch a 178 5 t 5s Note 2b Note Note 1 Note 2 Note 3 Note 4 Note 5 Please see next page e 2D This transistor is an electrostatically sensitive device Please handle it with caution 1 2002 01 15 TOSHIBA TPC6003 Electr
5. ical Characteristics Ta 25 C Characteristics Symbol Test Condition ETIENNE EN WE EEN EEN 0 N panoro wss voso vezv 0 Drain source breakdown voltage Pr ae ee EE ES 5 Ves 4 5V Ip 3A 25 3 RE Input capacitance Ciss Turn ON time Switching time Turn OFF time EN Duty lt 1 tw 10 us Total gate charge gate source plus gate drain Gate source charge as Vpop 24 V Ves 10 V ID 6 A Gate drain miller charge aa Source Drain Ratings and Characteristics Ta 25 C Characteristics Symbol Test Condition N on Drain source ON resistance RDS ON Note 1 Please use devices on condition that the channel temperature is below 150 C Note 2 a Device mounted on a glass epoxy board a b Device mounted on a glass epoxy board b FR 4 FR 4 2510 ms ie 25 4 x 25 4 x 0 8 al Unit mm a b Note 3 Vpp 24 V Ten 25 C initial L 0 5 mH RG 25 Q IAR 3 0 A Note 4 Repetitive rating pulse width limited by maximum channel temperature Note 5 Black round marking e locates on the left lower side of parts number marking S2D indicates terminal No 1 2 2002 01 15 TOSHIBA Q L 5 D E ERSE ie dpe iT Common source Ta
6. or usage in general electronics applications computer personal equipment office equipment measuring equipment industrial robotics domestic appliances etc These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and or reliability or a malfunction or failure of which may cause loss of human life or bodily injury Unintended Usage Unintended Usage include atomic energy control instruments airplane or spaceship instruments transportation instruments traffic signal instruments combustion control instruments medical instruments all types of safety devices etc Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others e The information contained herein is subject to change without notice 6 2002 01 15

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