IXYS IXTH 50N20 IXTM 50N20 Manual
Contents
1. Fig 1 Output Characteristics Fig 2 Input Admittance 100 100 90 90 80 80 q 70 q 70 D 60 S 60 E 50 E 50 40 40 m Ma 30 30 20 20 10 10 0 0 Vpg Volts Vos Volts Fig 3 Rosen vs Drain Current Fig 4 Temperature Dependence of Drain to Source Resistance 125 2 50 2 25 e 100 g 2 00 5 E 1 75 o ME Z 1 50 5 lp 40A A 125 CONT Vas 15V E 1 00 0 75 25 0 25 50 75 100 125 150 175 200 0 25 0 25 50 75 100 125 150 Amperes T Degrees C Fig 5 Drain Current vs Fig 6 Temperature Dependence of CaseTemperature Breakdown and Threshold Voltage 1 2 1 4 BV ces Vasin O o N 1 0 8 E 2 5 09 E z lt 08 a 5 S 0 7 a 0 6 0 5 50 25 0 25 50 75 100 125 150 0 25 0 25 50 75 100 125 150 Tc Degrees C T Degrees C 2000 IXYS All rights reserved 3 4 LiIIXYS IXTM 50N20 Fig 7 Gate Charge Characteristic Curve Fig 8 Forward Bias Safe Operating Area 10us2. TH 100 ELimited by Rosin s P x o Paai ims 2 RO 10ms T 40 zn 100ms 1 0 25 50 75 100 125 150 175 200 1 10 100 Gate Charge nCoulombs Vos Volts Fig 9 Capacitance Curves Fig 10 Source Current vs Source to Drain Voltage Cas LL o f 1 MHz n g Vps 25V 5 E g Coss 3 a a 9 t C 5 10 15 20 25 0 2 0 4 0 6 0 8 1 0 Vos Volts Vsp Volts Fig 11 Transient Thermal Impedance D 0 5 X 01 o 0 2 2 S D 0 1 Q 8 D 0 0 A D tp T us t w 0 01 Dzo L tp E D 0 01 2 Single pulse i s DE i 0 001 0 00001 0 0001 0 001 0 01 0 1 1 10 Time Seconds 2000 IXYS All rights reserved 4 4
3. power supplies Motor controls Uninterruptible Power Supplies UPS DC choppers Advantages Easy to mount with 1 screw TO 247 isolated mounting screw hole Space savings High power density 91534F 5 97 2000 IXYS All rights reserved 1 4 FLX Ys IXTH 50N20 IXTM 50N20 Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max Jis Vos 10 V lp 2 0 5 I pulse test 20 32 S C 4600 pF Ces Vos 0 V Vos 25 V f 1MHz 800 pF C 285 pF bacon 18 25 ns t Veg 10V V 0 5 Viss lb 0 5 ls 15 20 ns toot R 2 Q External 72 90 ns t 16 25 ns Gon 190 220 nC Q Veg 10 V Vj 0 5 Viss Ip 0 5 ls 35 50 nC Q 95 110 nC Rinse 0 42 K W Rinck 0 25 K W Source Drain Diode Characteristic Values T 25 C unless otherwise specified Symbol Test Conditions min typ max ls Vos 50V 50N20 50 A li Repetitive 200 A pulse width limited by T j Vsp l l Veg OV 15 V Pulse test t 300 us duty cycled lt 2 t I l di dt 100 A us V 100 V 400 ns TO 247 AD IXTH Outline A k E A2 dg pa dl A mI Q S H Ot n ep ary fe b1 a Tc b e Terminals 1 Gate 2 Drain 3 Source Tab Dr
4. AIX TH 50N 20 4 py fe EX Ys MegaMOS FET IXTH 50N20 N Channel Enhancement Mode D G s Symbol Test Conditions Maximum Ratings Voss T 25 C to 150 C 200 V Vus T 25 C to 150 C Ros 1 MQ 200 V Vos Continuous 20 V Vosm Transient 30 V loos T 25 C 50 A low T 25 C pulse width limited by T y 200 A P T 25 C 300 Ww T 55 150 C Tu 150 C i 55 150 C M Mounting torque 1 13 10 Nm lb in Weight TO 204 18 g TO 247 6g Maximum leadtemperature for soldering 1 6 mm 0 062 in from case for 10 s 300 C Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max Voss Veg 0 V 1 250 NA 200 V Vesa Vos Ves ly 250 pA 2 4 V loss Vos 20 Vag V 0 100 nA loss Vos 0 8 Viss T 25 C 200 pA Vas 70V T 2125 C 1 mA F sion Vos 10 V 15 0 5 1 0 045 Q Pulse test t lt 300 us duty cycled lt 2 IXYS reserves the right to change limits test conditions and dimensions Vass 200 V b 50A DS on 45 MQ TO 247 AD IXTH Ze d TAB G D S TO 204 AE IXTM D Drain TAB Drain G Gate S Source Features International standard packages e LOW Rog on HDMOS process Rugged polysilicon gate cell structure Low package inductance lt 5 nH easy to drive and to protect Fast switching times Applications Switch mode and resonant mode
5. ain Dim Millimeter Inches Min Max Min Max A 4 7 5 3 185 209 A 2 2 2 54 087 102 A 2 2 2 6 059 098 b 1 0 1 4 040 055 b 1 65 2 13 065 084 b 2 87 3 12 113 123 C 4 8 016 031 D 20 80 21 46 819 845 E 5 75 16 26 610 640 e 5 20 5 72 0 205 0 225 L 119 81 20 32 780 800 L1 4 50 77 P 3 55 3 65 140 144 Q 5 89 6 40 0 232 0 252 R 4 32 549 170 216 S 6 15 BSC 242 BSC TO 204AE IXTM Outline I eD 4 L A E jm AE R1 9p Pins 1 Gate 2 Source Case Drain Dim Millimeter Inches Min Max Min Max A 6 4 11 4 250 450 A1 1 53 3 42 060 135 b 1 45 1 60 057 063 D 22 22 875 e 10 67 11 17 420 440 e1 5 21 5 71 205 225 L 111 18 12 19 440 480 p 3 84 4 19 151 165 Opi 3 84 4 19 151 165 q 30 15 BSC 1 187 BSC R 12 58 13 33 495 525 R1 3 33 4 77 131 188 S 16 64 17 14 655 675 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 2 4 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 025 IXTH 50N LiIIXYS IXTM 50N20
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IXYS IXTH 50N20 IXTM 50N20 Manual