IXYS
Contents
1. i Y Advance Technical Information Le Standard Power MOSFET IXTH 50P10 y 100 V P Channel Enhancement Mode D25 55 mO Avalanche Rated Rosin m D G S Symbol Test Conditions Maximum Ratings TO 247 AD Vig T 25 C to 150 C 100 V i Voer T 25 C to 150 C R 1 MQ 100 V 2 Vos Continuous 20 V th V osm Transient 30 V z D TAB los T 25 C 50 A ag lon T 25 C pulse width limited by T 200 A lir T 25 C 50 A G Gate D Drain i S Source TAB Drain Ek T 25 C 30 mJ P5 T 25 C 300 W T 55 150 C Ty 150 C Features Lee 55 150 an International standard package T Maximum lead temperature for soldering 300 C anand pe 1 6 mm 0 062 in from case for 10 s LOW Pos on HDMOS process M Mounting torque 1 13410 Nm b in USO Re POY NEON gale Ce ueuneite Unclamped Inductive Switching UIS Weight 6 g rated Low package inductance lt 5 nH easy to drive and to protect Symbol Test Conditions Characteristic Values Applications T 25 C unless otherwise specified High side switching min typ max Push pull amplifiers Vice Vag 0 V I 250 pA 100 a v DC choppers Automatic test equipment Vasu Vos Veg lp 250 uA 3 0 i 5 0 V loss Vas 20 Vio Vos 9 E 100 nA Advantages Vig 0 8 Voss T 25 C 25 uA Easy to mount with 1 screw Vos 0 V T 125 C 1 mA isolated mounting screw hole 7 i Space savings Daloni aR S Nee a oa High power density 202. 02 IXYS All rights reserved 98905 2 02 IX Ys IXTH 50P10 Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max Js Vos 10 V 1 I pulse test 8 S C 4200 pF Css e V Vos 25 V f 1 MHz 1720 pF C 750 pF kiss 46 ns t gg 10 V Vis 0 5 Viss lp 0 5 I 39 ns tiin 4 7Q eerie 86 ns t 38 ns Qion 150 nC Qs ag 710 V Vos 0 5 Viss 0 5 I 36 nC Qa 70 nC Ric 0 42 K W Roas 0 25 K W Source Drain Diode Characteristic Values T 25 C unless otherwise specified Symbol Test Conditions min typ max I Vig 0 50 A le Repetitive pulse width limited by T Lol 200 A Vap l l Vos 0 V 3 V Pulse test t lt 300 us duty cycle d lt 2 t l l di dt 100 A us V 50 V 180 ns IXYS reserves the right to change limits test conditions and dimensions TO 247 AD Outline 2 Drain Tab Drain Terminals 1 Gate 3 Source Millimeter Min Max Min Max 4 7 5 3 2 2 2 54 2 2 2 6 1 0 1 65 2 13 2 87 3 12 A 8 20 80 21 46 15 75 16 26 5 20 5 72 0 205 19 81 20 32 4 50 3 55 3 65 5 89 6 40 0 232 IXYS MOSFETS and IGBTs are covered by oneor more ofthe following U S patents 4 835 592 4 850 072 4 881 106 4 931 844 5 017 508 5 034 796 5 049 961 5 063 307 5 187 117 5 237 481 5 486 715 6 306 728B1 5 381 025
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