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IXYS IXTQ 110N055P/IXTA 110N055P/IXTP 110N055P handbook

1. PolarHT Power MOSFET IXTQ 110N055P IXTA 110N055P IXTP 110N055P N Channel Enhancement Mode D G S Symbol Test Conditions Maximum Ratings Moss T 2 25 C to 175 C 55 V M sn T 2 25 C to 175 C R 1 MQ 55 V Vos Continuous 20 V Vesa Tranisent 30 V bas T 25 C 110 A RUS External lead current limit 75 A T 25 C pulse width limited by T 250 A lar T 25 C 110 A E T 25 C 30 mJ E T 25 C 1 0 J dv dt l lt lpm di dt lt 100 A us Vs S Voss 10 Vins T lt 150 C R 10Q P T 25 C 330 W T b5 175 2C Tu 175 26 T 55 150 C T 1 6 mm 0 062 in from case for 10 s 300 C Maximum tab temperature for soldering 260 IG TO 263 package for 10s M Mounting torque TO 3P TO 220 1 13 10 Nm lb in Weight TO 3P 5 5 g TO 220 4 g TO 263 3 g Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified Min Typ Max Voss Vos 0V l 250 pA 55 V Vestn Vos Ves ly 2504A 2 5 5 0 Ieee Vos 20 Voe V4 70 100 nA loss Vos Voss 25 LA Vss OV T 125 C 250 uA Rosi Veg 10 V lp 0 5 I 11 13 5 mQ Pulse test t 300 us duty cycle d lt 2 Viss 55 V lo 110 A Roson 19 5 MQ TO 3P IXTQ D s TAB TO 220 IXTP S TAB G Gate D Drain S Source TAB Drain Features International standard packages Unclamped Inductive Switching UIS rated Low package i
2. Volts Fig 9 Source Current vs Source To Drain Voltage 04 06 08 1 12 14 16 18 2 Vsp Volts Fig 11 Capacitance 0 5 10 15 20 25 30 35 40 Vps Volts sions Fig 8 Transconductance 50 45 40 An 35 T 40 C 2 25 C 30 E 150 C a H 25 o 20 15 10 5 0 0 50 100 150 200 250 300 lp Amperes Fig 10 Gate Charge 2 o 2 Li Yn gt O 10 20 30 40 50 60 70 80 Q g nanoCoulombs Fig 12 Forward Bias Safe Operating Area 1000 R Limit DS on 25us 8 100 100us eo E 1ms Li o 10 10ms DC T 175 C O Te 25 C 1 1 10 100 Vps Volts IXTA 110N055P IXTP 110N055P LHIXYS IXTQ 110N055P Fig 13 Maximum Transient Thermal Resistance 1 00 0 10 R tn 3c 9C W 0 01 0 1 10 Pulse Width milliseconds 100 1000 2005 IXYS All rights reserved
3. uc 123d _ TO 263 IXTA Outline E p Dim Millimeter Inches c A 2 4 E ET Min Max Min Max jl un e a A 406 483 160 190 T AL 203 279 080 110 i D b 051 0 99 020 039 Pins 1 Gate 2 Drain Q La t b2 114 140 045 055 I c 046 074 018 029 sus u c2 114 140 045 55 EX w Ad D 864 965 340 380 SYM INCHES m b D1 711 813 280 320 MIN MAX E 965 1029 380 405 A 170 190 E E E 40 i El 686 813 270 320 7 i f e 254 BSC 400 BSC D ZEN foe L 1461 1588 575 625 5 14 a i ud i 229 279 090 110 b 2D os i L2 102 140 040 055 390 420 i L3 127 178 050 070 40 BSC F L4 0 0 38 o O15 ET 045 055 uj U H 230 270 i R 046 074 018 029 Ji 099 1 k 0 015 500 550 L1 110 230 P 39 161 Q 100 125 IXYS reserves the right to change limits test conditions and dimensions IXYS MOSFETs and IGBTsare covered by 4 835 592 4 931 844 5 049 961 5 237 481 6 162 665 6 404 065B1 6 683 344 6 727 585 one or moreofthe following U S patents 4 850 072 5 017 508 5 063 307 5 381 025 6 259 123B1 6 534 343 6 710 405B2 6 759 692 4 881 106 5 034 796 5 187 117 5 486 715 6 306 728 B1 6 583 505 6 710 463 GTX Ys IXTA 110N055P IXTP 110N055P IXTQ 110N055P 100 Ip Amperes 91 o 100 Ip Amperes Oo o Rps on Normalized oo Fig 1 Output Characteristics 2 8 25 C
4. Ves 10V 9v 8V 7V 6V 5V 0 02 04 06 O8 1 12 14 16 Vb s Volts Fig 3 Output Characteristics 150 C Vas 710V 9v 8v 7V 6V 5V 0 04 08 12 16 2 2 4 Vp g Volts Fig 5 Ros on Normalized to 0 5 Ipas Value vs Drain Current T 175 C Ves 10V Ves 15V T 25 C O 25 50 75 100 125 150 175 200 225 250 p Amperes p Amperes Rps on Normalized p Amperes Fig 2 Extended Output Characteristics 9 25 C 220 200 Ves 10V 180 160 9v 140 120 8v 100 90 7M 60 40 6v 20 5V 0 0 1 2 3 4 5 6 7 8 9 10 Vp ga Volts Fig 4 Rps oy Normalized to 0 5 Ip25 Value vs Junction Temperature 50 25 0 25 50 75 100 125 150 175 T Degrees Centigrade Fig 6 Drain Current vs Case Temperature 120 100 80 60 40 20 T 50 25 0 25 50 75 100 125 150 175 Tc Degrees Centigrade 2005 IXYS All rights reserved ENIX YS IXTA 110N055P IXTP 110N055P IXTQ 110N055P Ip Amperes I 5 Amperes 250 225 200 175 150 125 100 300 250 200 150 100 50 10000 Capacitance picoFarads 1000 Fig 7 Input Admittance T 40 C 25 C 150 C 2 3 4 5 6 7 8 9 10 un Vcs
5. nductance easy to drive and to protect Advantages Easy to mount Space savings High power density 2005 IXYS All rights reserved DS99182A 05 05 IXTA 110N055P IXTP 110N055P IXYS IXTQ 110N055P Symbol Test Conditions Characteristic Values TO 3P IXTQ Outline T 25 C unless otherwise specified x E Min Typ Max J Js Vps 10 V 0 5 lp pulse test 23 36 S 2 e Ci 2210 pF C ss Ves OV Vy 25 V f 1 MHz 1400 pF C 550 pF taton 27 ns t Ves 10 V Vy 0 5 Viss lb Ioas 53 ns taor R 10 Q External 66 ns t 45 ns Qo 76 nc Qs Voes 10 V Vy 0 5 Vics lp 0 5 lp 17 nc Qua 33 nc Rie 0 38 K W Rick TO 3P 0 21 KIW TO 220 0 25 K W Source Drain Diode Characteristic Values T 25 C unless otherwise specified Symbol Test Conditions Min typ Max le Vos OV 110 A Ie Repetitive 250 A Mo I zl Veg 70V 15 V E LEE 4 Pulse test t lt 300 us duty cycle d lt 2 96 j 5 FILE 1 Y H i eA B A 225A 120 ns oce di dt 100 A us Qua VR 725V 1 4

IXYS IXTQ 110N055P/IXTA 110N055P/IXTP 110N055P handbook

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