MITSUBISHI Nch POWER MOSFET FS50UM-3 handbook
Contents
1. MITSUBISHI Nch POWER MOSFET FS50UM 3 HIGH SPEED SWITCHING USE ON STATE RESISTANCE VS DRAIN CURRENT TYPICAL TYPICAL 25 Pulse Test lt lt oz 2 zo 2 us TN 20 09 Oz 24 20 gt 20 Tc 25 Pulse Test 0 3 5710023 57101 23 57102 23 GATE SOURCE VOLTAGE Vas DRAIN CURRENT 0 A FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS DRAIN CURRENT TYPICAL TYPICAL 100 Tc 25 Vps 10V Vps 10V Pulse Test Lt Pulse Test 08 gt 60 2 c HO 5 DE o 49 zr z gt gt 20 lt 0 100 0 4 8 12 16 20 100 2 3 45 7101 2 345 710 GATE SOURCE VOLTAGE Vas V DRAIN CURRENT ID A CAPACITANCE VS DRAIN SOURCE VOLTAGE SWITCHING CHARACTERISTICS TYPICAL TYPICAL 2 is Ciss 2 5 2 15 2 0 gt ao 103 E 2 7 o 2 3 goss 2 5 d 2 Crss 102 5 Tch 25 I Tch 25 VDD 80V f 1 2 Vas 10V S vas ov ii RGEN Ras 500 3 57100 23 5710 23 5710223 100 2 345 7101 2 345 710 DRAIN SOURCE VOLTAGE 05 V DRAIN CURRENT ID A Feb 1999 M2. I amp FS50U M 3f v RS MITSUBISHI Nch POWER MOSFET FS50UM 3 HIGH SPEED SWITCHING USE FS50UM 3 OUTLINE DRAWING Dimensions in mm 10 5MAX 4 5 1 3 SS e 10V DRIVE BRAIN 3 SOURCE 4 DRAIN TO 220 APPLICATION Motor control Lamp control Solenoid control DC DC converter etc MAXIMUM RATINGS 25 Parameter Conditions Ratings Drain source voltage 150 Gate source voltage 20 Drain current 50 Drain current Pulsed 200 Avalanche drain current Pulsed 50 Source current 50 Source current Pulsed 200 Maximum power dissipation 125 Channel temperature 55 150 Storage temperature 55 150 Weight Typical value 2 0 Feb 1999 4 MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS50UM 3 HIGH SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Teh 25 Limits Symbol Parameter Test conditions V BR 055 Drain source breakdown voltage 10 1mA Vas OV IGSS Gate source leakage current VGs 20 Vps 0 1055 Drain source leakage current Vps 150 Vas 0V VGS th Gate source threshold voltage ID 1mA Vps 10V TDS ON Drain source on state resistance ID 25A Vos 10V VDS ON Drain source on state voltage ID 25A Vas 10V Forward transfer admittance ID 25A Vps 10V Ciss Input capacitance Coss Output capacitance Vps 10V Ves OV f 1 2 Crss Rever
3. ITSUBISHI ELECTRIC DRAIN SOURCE ON STATE RESISTANCE ros ON DRAIN SOURCE BREAKDOWN VOLTAGE V BR 055 t C DRAIN SOURCE BREAKDOWN VOLTAGE V BR DSS 25 GATE SOURCE VOLTAGE Ves GATE SOURCE VOLTAGE VS GATE CHARGE TYPICAL Tch 25 Ip 50A 0 40 80 120 160 200 CHARGE nC ON STATE RESISTANCE VS CHANNEL TEMPERATURE TYPICAL Ip 1 210 se Test DRAIN SOURCE ON STATE RESISTANCE ros ON 25 10 1 50 0 50 100 150 CHANNEL TEMPERATURE Tech BREAKDOWN VOLTAGE VS CHANNEL TEMPERATURE TYPICAL 0 4 50 0 50 100 150 TRANSIENT THERMAL IMPEDANCE 2 ch c C W CHANNEL TEMPERATURE Tch EN MITSUBISHI Nch POWER MOSFET FS50UM 3 HIGH SPEED SWITCHING USE SOURCE DRAIN DIODE FORWARD CHARACTERISTICS TYPICAL 100 0 60 S i 40 O 20 9 0 0 0 4 0 8 1 2 1 6 2 0 SOURCE DRAIN VOLTAGE V THRESHOLD VOLTAGE VS CHANNEL TEMPERATURE TYPICAL a EE O IS 0 tg qo jg gt lt 0 50 0 50 100 150 CHANNEL TEMPERATU
4. RE Tch TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 1019210 7 05 3 02 2 P LLL PDM 1071 tw L 0 05 Et 3 0 02 5 0 01 T Single Pulse 10 2 MITSUBISHI ELECTRIC PULSE WIDTH tw s Feb 1999
5. se transfer capacitance td on Turn on delay time tr Rise time off Turn off delay time Fall time VSD Source drain voltage 5 25A Vas 0V Rth Thermal resistance Channel to case trr Reverse recovery time Is 50A dis dt 100A us VDD 80V ID 25 VGs 10V RGEN Res 500 PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 3 2 E 102 a 160 T 7 t tw 10us a 5 E 100 S E 120 Z 2 H amp 10 e 7 ims 2 D 80 o 5 a z 3 lt 2 10ms ul 2 40 Q 100 PLE 56 25 0 Single Pulse 0 50 100 150 200 0023 57101 23 57102 23 57103 CASE TEMPERATURE DRAIN SOURCE VOLTAGE Vos OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS TYPICAL TYPICAL 100 Ves 20V 10V 8V Tc 25 Pulse Test lt 80 T a a 5 60 z ra ra o 4 2 2 20 0 0 1 0 2 0 3 0 4 0 5 0 DRAIN SOURCE VOLTAGE Vos V DRAIN SOURCE VOLTAGE Vos Feb 1999 MITSUBISHI ELECTRIC ON STATE VOLTAGE VS GATE SOURCE VOLTAGE
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MITSUBISHI Nch POWER MOSFET FS50UM 3 handbook