MITSUBISHI Nch POWER MOSFET FS50KM-2 handbook
Contents
1. 10V yts Forward transfer admittance ID 25A Vps 10V Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Vps 10V Vas OV f 1MHz td on tr Turn on delay time Rise time td off Turn off delay time tf Fall time VDD 50V ID 25A Vas 10V RGEN RGs 502 VsD Source drain voltage Is 25A Vas OV Rth ch c Thermal resistance Channel to case trr Reverse recovery time PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE Is 50A dis dt 100A us MAXIMUM SAFE OPERATING AREA 50 3 2 2 a 40 z d tw 10us z S 3 d Q 30 z 2 iu 10 1004s B 20 o 5 c z 3 ims z D t 2 10ms e m a 10 100 7 Tc 25 C ac ns Single Pulse 00 50 100 150 200 33 5710023 57101 23 57102 23 CASE TEMPERATURE Tc C DRAIN SOURCE VOLTAGE Vos V OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS TYPICAL TYPICAL Vas 20V 10V 7V 6V ii Vas 20V 10V ER 1 1 Tc 25 C 4 DC 7 Pulse Test h T Z 40 ary D a Vul a a 7 5 E 30 WW DI cc cc A oc ao 3 D 20 So EEE 5V Z z Ed E wW aa a RSA a A 10 lt LL Po 30W sn d2. 50V 7 f 1MHz 5 Vas 10V 5 T 4 RGEN Ras 509 D 3 E 3 ul E 2 Ciss ui 2 o 2 5 103 td off E oO 7 o 102 OG 5 z o 7 tf EO 3 5 Og 2 Coss E 1 tr 9 40 Crss a td on T 5 2 1 23 57100 23 5710 23 57102 23 10360 2 345 7101 2 345 7102 DRAIN SOURCE VOLTAGE Vos V DRAIN CURRENT Ip A Feb 1999 MITSUBISHI ELECTRIC GATE SOURCE VOLTAGE MITSUBISHI Nch POWER MOSFET FS50KM 2 HIGH SPEED SWITCHING USE SOURCE DRAIN DIODE VS GATE CHARGE FORWARD CHARACTERISTICS TYPICAL TYPICAL 20 100 E Teh 25 C Vas OV i Ip 50A Pulse Test S 16 X 80 o S VDS 20V E 1 amp 60 o ra S cc uu 3 8 50V id 40 i 2 80V O D D E Q 2 LT lt D 0 0 0 20 40 60 80 100 0 4 0 8 1 2 1 6 2 0 GATE CHARGE Oo nC SOURCE DRAIN VOLTAGE Vep V ON STATE RESISTANCE VS THRESHOLD VOLTAGE VS o o CHANNEL TEMPERATURE CHANNEL TEMPERATURE amp TYPICAL TYPICAL g 10 a 7LVes 10V Vps 10V 5 Ip 1 2ID a ID 1mA w in 4 Pulse Test Oo
3. z 9 3 I2 zz ar LE lt ws QD 2 CS D I 9 ul 2 fe ccu gt uw 100 Lu KI H Ow tc 7 Lo Lx act ot 5 OF zii 4 oA O 3 uo LI LEA og 2 lt x EIE e o 2 ZS 10 1 0 Z z 50 0 50 100 150 50 0 50 100 150 x E S CHANNEL TEMPERATURE Tch C CHANNEL TEMPERATURE Tch C ENES BREAKDOWN VOLTAGE VS c 9 fo CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE 2 TYPICAL E CHARACTERISTICS JE oU SE j JE ET Lr o 5ED21 0 Old E 0 5 Z Q Q 3 z a 100E 5 a p 91 Pom a JE 2 3 Um Bou 0 05 co 107 0 02 LJ um I 5 0 01 p tw Ego Single Pulse T 2c E 3 LI oia z ZG H 04 B 40 2 Z 50 0 50 100 150 9 10423 5710323 5710 223 5710 123 57100 23 5710 23 57102 Es E lt amp E CHANNEL TEMPERATURE Tch C fe PULSE WIDTH tw s Feb 1999 MITSUBISHI ELECTRIC
4. Int 5 FS50KM 2 hv F5 MITSUBISHI Nch POWER MOSFET FS50KM 2 HIGH SPEED SWITCHING USE FS50KM 2 OUTLINE DRAWING Dimensions in mm 100 3 2 8 0 2 it 4 0 75 0 1 alee 0 75 0 15 2 54 0 25 gt e 10V DRIVE GATE DRAIN SOURCE TO 220FN APPLICATION Motor control Lamp control Solenoid control DC DC converter etc MAXIMUM RATINGS Tc 25 C Parameter Conditions Ratings Drain source voltage 100 Gate source voltage 20 Drain current 50 Drain current Pulsed 200 Avalanche drain current Pulsed 50 Source current 50 Source current Pulsed 200 Maximum power dissipation 30 Channel temperature 55 150 Storage temperature 55 150 Isolation voltage AC for 1minute Terminal to case 2000 Weight Typical value 2 0 Feb 1999 MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS50KM 2 HIGH SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Teh 25 C Symbol Parameter Test conditions Limits V BR DSS Drain source breakdown voltage ID 1mA Vas OV IGSS Gate source leakage current Vas 20V Vps 0V IDSS VGS th Drain source leakage current Gate source threshold voltage Vps 100V Vas OV ID 1mA VDs 10V rDS ON Drain source on state resistance ID 25A Vas 10V VDS ON Drain source on state voltage ID 25A Vas
5. d 00 2 4 6 8 10 00 1 2 3 4 5 DRAIN SOURCE VOLTAGE Vos V DRAIN SOURCE VOLTAGE Vos V Feb 1999 MITSUBISHI ELECTRIC ON STATE VOLTAGE VS GATE SOURCE VOLTAGE MITSUBISHI Nch POWER MOSFET FS50KM 2 HIGH SPEED SWITCHING USE ON STATE RESISTANCE VS DRAIN CURRENT TYPICAL TYPICAL Il Tc 25 C Tc 25 C H Pulse Test Pulse Test w li uc Ha 11 lt S TI lt E ET 11 ka oz H 02 zo rl z Og og 2 i ch SL LA 2o EE ER I ce Zo Zon g gt amp a ac 0 3 5710023 5710 23 57102 23 GATE SOURCE VOLTAGE Vos V DRAIN CURRENT Ip A FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS DRAIN CURRENT TYPICAL TYPICAL 100 102 Tc 25 C 7 Vps 10V Vps 10V 5 Pulse Test z 80 Pulse Test DR 2 2 Him 3 nL ES 2 z 60 2 DI Cw CO 101 5 T 7 40 H 7 1 TC 25 C Z 5 a 3 75 C G 20 Ea 125 C 2 0 y 100 0 4 8 12 16 20 100 2 345710 2 345 710 GATE SOURCE VOLTAGE Vas V DRAIN CURRENT Ip A CAPACITANCE VS DRAIN SOURCE VOLTAGE SWITCHING CHARACTERISTICS TYPICAL TYPICAL 3 S Tch 25 C Wi Tch 25 C 104 Fvas ov 7 VDD
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MITSUBISHI Nch POWER MOSFET FS50KM 2 handbook