Central CMSD4448 SUPER-MINI HIGH SPEED SWITCHING DIODE handbook
Contents
1. NO A CONNECTION 2 C R12. Central Semiconductor Corp CMSD4448 SUPER MINI HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMSD4448 type is a ultra high speed silicon switching diode manufactured by the epitaxial planar process in an epoxy molded super mini surface mount package designed for high speed switching applications SOT 323 CASE MAXIMUM RATINGS T 25 C SYMBOL UNITS Continuous Reverse Voltage VR 75 V Peak Repetitive Reverse Voltage VRRM 100 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current IFRM 250 mA Forward Surge Current tp 1 usec IFsM 4000 mA Forward Surge Current tp 1 sec IFsM 1000 mA Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJTstg 65 to 150 C Thermal Resistance OJA 500 C W ELECTRICAL CHARACTERISTICS T 25 C unless otherwise noted SYMBOL TEST CONDITIONS MIN MAX UNITS VBR IR 5 0uA 75 V VBR IR 100uA 100 V IR VR 20V 25 nA VE IF 5 0MmA 0 62 0 72 V Vr IF 100mA 1 0 V CT Vp 0 f 1 MHz 4 0 pF trr IR lF 10mA R1 1002 Rec to 1 0mA 4 0 ns 236 All dimensions in inches mm 237 063 1 60 087 2 22 003 0 08 047 1 19 006 0 15 004 0 10 7055 1 40 100 25 N H2 17 10 ij 079 2 00 045 1 14 oe 087 2 22 053 1 35 l 004 0 10 3 MAX IMUM 20810 20 031 0 79 016 0 41 TA 039 1 00
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