JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY WBFBP-06C Plastic-Encapsulate Diodes
Contents
1. heating effect 2 f 1KHz Typical Characteristics 250 50 200 _ 40 5 z 19 T on 0 5 100 20 5 5 E 50 5 5 2 50 0 50 100 150 9 1 2 8 9 10 Ta AMBIENT TEMPERATURE C ZENER VOLTAGE 1 Curve Total Fig 2 ener Breakdown Characteristics 30 1000 Ei 1 5 HE ToT 11 3 q 100 z 2 E 40 a 5 gt 10 0 Ya NOMINAL ZENER VOLTAGE V Fig 4 Junction Capacitance vs Nominal Zener Voltage Vz ZENER VOLTAGE Fig 3 Zener Breakdown Characteristics 12 5 B 41 4 4 2 41 JIANGSU CHANGIJIIANG ELECTRONICS TECHNOLOGY CO LTD WBFBP 06C 2 2 0 5 PACKAGE OUTLINE DIMENSIONS TOP VIEW BOTTOM VIEW ZE2 000 X 2 000 4 0 650 0 02 SIDE VIEW 0 450 0 025 6 0 250 0 025 LAND PATTERN RECOMMENDATION qe fe te at Bl Max 58 040 0250 006 000 10 20 005 003 Symbol 00 2 OCTOBER 2005 APPLICATION CIRCUITS SIM 5 6 8V SIM RST SIM RST VSIM TO DSC 1G SIM CLK SIM CLK SIM 5V Sim card circuit This datasheet has been download from www cj elec com Datasheets for electronics components2. 2576 FBA T54TW hv 8 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD WBFBP 06C Plastic Encapsulate Diodes FQZX363C5V6 QZX363C20 WBFBP 06C QUAD SURFACE MOUNT ZENER DIODE ARRAY DESCRIPTION Epitaxial planar Silicon diode FEATURES e Nominal Zener Voltages 5 6V 6 8V 12V 15V 20V e Ultra Small Surface Mount Package APPLICATION Ideal For Transient Suppression Sim card circuit lays For portable equipment i e Mobile phone MD CD ROM DVD ROM Note book PC etc Maximum Ratings TA 25 C unless otherwise specified Characteristic __ Symbol _ Ressiance Ra _ Electrical Characteristics 0 T 25 unless otherwise specified Temperature Maximum Coefficent Zener Voltage Maximum Zener Reverse Of Type Marking Range Impedance 1 Current Zener voltage lzt 5ma 8 w _ mumber code waxy a mal ua Wax ramasacsve s32 s 1 1 20 20 2s razxasacove xer 68 15 5 2 12 _ acr KrF 2 25 5 04 so wo 15 198 o0 s 20 1 04 120 0 20 190 210 58 5 254 ox Notes 1 Short duration test pulse used to minimize self
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY WBFBP 06C Plastic Encapsulate Diodes