PYRAMID PYX28C64 DATA SHEET
Contents
1. pus tovwH 7 HIGH Z DATA DATA gt aan 7 Document EEPROM101 REV B Page 5of 11 PYX28C64 TIMING WAVEFORM OF PAGE WRITE CYCLE poe LOAD uf NN twHot teo twHeEH twewHt twHwe2 twuer DATA POLLING towwH us HIGH 2 TIMING WAVEFORM OF CHIP CLEAR CYCLE ADDRESS Vin ViL ler wi Vu twHEH Vin tomer WE Document 101 REV 60711 28 64 WRITE SEQUENCE FOR SOFTWARE DATA PROTECTION SOFTWARE SEQUENCE TO DE ACTIVATE SOFTWARE DATA PROTECTION WRITE DATA AA TO ADDRESS 1555 WRITE DATA 55 TO ADDRESS OAAA WRITE DATA AO TO ADDRESS 1555 WRITE DATA XX TO ANY ADDRESS WRITE LAST BYTE TO LAST ADDRESS AFTER twc RE ENTERS DATA PROTECTED STATE Document EEPROM101 REV B Set SDP byte page load enable WRITE DATA AA TO ADDRESS 1555 WRITE DATA 55 TO ADDRESS 0AAA WRITE DATA 80 TO ADDRESS 1555 WRITE DATA TO ADDRESS 1555 WRITE DATA 55 TO ADDRESS WRITE DATA 20 TO ADDRESS 1555 SDP Reset Page 7 of 11 28 64 TEST CONDITIONS TRUTH TABLE Input Rise and Fall Times 10ns P Read e Input Timing Reference Level 1 5V Chip cear Vu2. 5 78 PY 28 64 201 32 f hv fg 28 64 SK x 8 EEPROM 6 5 Access Times of 200 250 300 and 350 ns B Single 5V 10 Power Supply Simple Byte and Page Write B Low Power CMOS 60 mA Active Current 200 pA Standby Current B FastWrite Cycle Times A PIN CONFIGURATIONS DESCRIPTION The PYX28C64 is a 5 Volt 8Kx8 EEPROM using floating gate CMOS Technology The device supports 64 byte page write operation The PYX28C64 features DATAand Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle The device also includes user optional software data protec tion Endurance is 10 000 or 100 000 Cycles and Data Retentionis 100 Years The device is available in a 32 Pin L CC package as well as a 28 Pin 600 mil wide Ceramic DIP 4 FUNCTIONAL BLOCK DIAGRAM 65 536 BIT 2 X BUFFERS E PROM ARRAY LATCHES AND DECODER 12 ADDRESS INPUTS BUFFERS Y BUFFERS AND LATCHES LATCHES AND DECODER R O 1 0 DATA INPUTS OUTPUTS CONTROL LOGIC AND TIMING PYHAMID SEMICONDUCTOR CORPORATION Software Data Protection Fully TTL Compatible Inputs and Outputs Endurance 10 000 or 100 000 Cycles Data Retention 100 Years Available in the following Packages 32 Pin Ceramic LCC 450 x 550
3. Vu Output Timing Reference Level 1 5V Byte write Output Load See Fig 1 FIGURE 1 OUTPUT LOAD Document EEPROM101 REV Page 8of 11 ORDERING INFORMATION PYX28C64 55 C to 125 C Mil Temp with MIL STD 883 Class B Compliance Ceramic Side Brazed DIP 600 mil 32 Pin Ceramic LCC 450 x 550 mil 20 25 30 35 20 200 ns etc High Endurance Designation X High Endurance Blank Standard 8K x 8 EEPROM PYX28C64 A X X Device Type High Speed Package Processing Endurance M MB CW L32 ENDURANCE DEVICE MINIMUM ENDURANCE 28 64 110 000 cycles Standard 28 64 100 000 cycles High Endurance Document EEPROM101 REV B Page 90111 PYX28C64 SIDE BRAZED DUAL IN LINE PACKAGE 600 mils Symbol Min 1922 b 90014 0 026 D 140 0 100 BSC 0 015 0 000 1 0 005 s2 0005 RECTANGULAR LEADLESS CHIP CARRIER Symbol Min 0 060 0 075 00 45 h x 45 3X jx 45 1X 029 0 0 442 0458 9048 es 2058 0050856 que T a 0 020 REF NE Document EEPROM101 REV B Page 10 of 11 PYX28C64 REVISIONS DOCUMENT NUMBER EEPROM101 DOCUMENT TITLE PYX28C64 8K x 8 EEPROM ISSUE ORIG OF REV DATE CHANGE DESCRIPTION OF CHANGE A May 07 JDB Renamed device from P5
4. mils 28 Pin 600 mil Ceramic DIP DIP C5 1 Document EEPROM101 REV B Revised July 2007 PYX28C64 MAXIMUM RATINGS Parameter Parameter Power Supply Pin with 0 3 to 6 25 Temperature Under 55 to 125 Respect to GND Blas Terminal Voltage with 0 5 to T Storage Temperature 65 to 150 Respect to GND 6 25 Power Dissipation 1 0 up to 6 25V DC Output Current 50 Operating Temperature 55to 125 RECOMMENDED OPERATING CAPACITANCES TEMPERATURE AND SUPPLY VOLTAGE 5 0V T 25 C f 1 0MHz Ambient 2 V Grade Temperature Military 55 C to 125 C 5 0V 10 Parameter Conditions Input Capacitance Output Capacitance DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage P5C164 Parameter Test Conditions Input High Voltage InputLow Voltage CMOS Input High Voltage CMOS Input Low Voltage Output Low Voltage TTLLoad Output High Voltage 1 4 V Min TTLLoad en aa 8 mA Min Input Leakage Current Vn GND to Vec Voc Max Output Leakage Current Vou GND to Voc Standby Power Supply Current TTL Input Levels f Max Outputs Open Standby Power Supply V Max Current S i CMOS Input Levels f 0 Outputs Open nput Levels Vin lt Mis or 2
5. C164 to P6C28C64 Jul 07 JDB Renamed device from P6C28C64 to PY X28C64 Document EEPROM101 REV B Page 110411
6. VEFORM OF READ CYCLE lavav um DATA DATA VALID gt DATA VALID gt tava Document EEPROM101 REV B 30 11 28 64 CHARACTERISTICS WRITE CYCLE 5V 10 All Temperature Ranges Parameter in vac Wi Mim MM Write Cycle Time 10 10 10 10 ms 1 t AvE Address Setup Time 20 20 20 20 ns tavwL Address Hold Time 150 150 150 150 ns w Write Setup Time lg wt Write Write Hold Time Time p OE Hold Time OE Hold Time Time WE Pulse Width 150 150 150 150 E bug Data Setup Time 50 50 50 50 ns lpvwH t 7 Data Hold Time 10 10 10 10 ns tWwHDx t Seapine Sa ARAR at tt te 3 31 e Emume 1 3 3 e Cw Jo o o Jaso iso __ Document 101 REV B Page 40111 28 64 TIMING WAVEFORM OF BYTE WRITE CYCLE CONTROLLED DATA BYTE WRITE N POLLING m ADDRESS VALID DON T CARE Spa WE bue len NW CE TIMING WAVEFORM OF BYTE WRITE CYCLE WE CONTROLLED DATA BYTE WRITE POLLING I ton ADDRESS VALID DON T CARE X hom CE NW WE N
7. Vig Vi WE V Supply Current All I O s Open Inputs 5 5V Notes 1 Stresses greater than those listed under MAXIMUM RATINGS 2 Extended temperature operation guaranteed with 400 linear feet per cause permanent damage to the device This is a stress rating only minute of air flow and functional operation of the device atthese or any other conditions 3 Transient inputs with V and not more negative than 3 0V and above those indicated in the operational sections of this specification 100mA respectively are permissible for pulse widths up to 2015 is not implied Exposure to MAXIMUM rating conditions for extended 4 This parameter is sampled and not 100 tested periods may affect reliability Document EEPROM101 REV B 2 0111 PYX28C64 AC ELECTRICAL CHARACTERISTICS READ CYCLE 5V 10 All Temperature Ranges 200 20 30 350 Symbol Parameter an Max wig Max Wax Cw eoe e feof james me aso olr wee Owens 1 a ow etn osteo w 9 e Cu wwtwesomammz 0 o fe jwwoswesomammer o w 9 Cw _ 9 o e me me w 30 s so mw TIMING WA
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PYRAMID PYX28C64 DATA SHEET