Home

HP AT-42000 Technical Data

1. dB Compressed Gain Vog 8 V Io 35 mA f 2 0GHz dB 15 0 f 4 0 GHz 10 0 NFo Optimum Noise Figure Vcg 8 V Ic 10 mA f 2 0GHz dB 1 9 f 4 0 GHz 3 0 Ga Gain NFo Vcg 8V Ic 10 mA f 2 0GHz dB 14 0 f 4 0 GHz 10 5 fr Gain Bandwidth Product Vog 8 V Ic 35 mA GHz 9 0 hpg Forward Current Transfer Ratio Vcg 8 V Ic 35 mA 30 150 270 Icgo Collector Cutoff Current Veg 8 V uA 0 2 lego Emitter Cutoff Current Vgg 1 V uA 2 0 Cop Collector Base Capacitancel Vog 8 V f 1 MHz pF 0 23 Notes l RF performance is determined by packaging and testing 10 devices per wafer 2 For this test the emitter is grounded 4 150 AT 42000 Typical Performance T 25 C _ 24 _ 24 Il F 4wev 20 amp 20 gan 1 0 GHz o kJ 6v 20 p L 16 9 16 M i 3 ene 4V A d a PidB a 16 P1dB 12 z 12 2 0 GHz q o A2 pud a 12 16 t v E a T 6v a J GiB L 7 T7 777 1 S 14 ay a 8 B v on m S148 4 7 4 0 GHz t 5 4 10 0 0 10 20 30 40 50 0 10 20 30 40 50 0 10 20 30 40 50 Ic mA Ic mA Ic mA Figure 1 Output Power and 1 dB Figure 2 Output Power and 1 dB Figure 3 Insertion Power Gain vs Compressed Gain vs Collect
2. 2S 18A T 42000f hv S Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data Features High Output Power 21 0 dBm Typical P qp at 2 0 GHz 20 5 dBm Typical P qp at 4 0 GHz High Gain at 1 dB Compression 15 0 dB Typical G apat 2 0 GHz 10 0 dB Typical G ap at 4 0 GHz Low Noise Figure 1 9 dB Typical NF at 2 0 GHz High Gain Bandwidth Product 9 0 GHz Typical fr Description Hewlett Packard s AT 42000 is a general purpose NPN bipolar transistor chip that offers excel lent high frequency performance The 4 micron emitter to emitter pitch enables this transistor to be used in many different functions The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications This device is designed for use in low noise wideband amplifier mixer and oscillator applications in the VHF UHF and microwave frequencies An optimum noise match near 50 O up to 1 GHz makes this device easy to use as a low noise amplifier The AT 42000 bipolar transistor is fabricated using Hewlett Packard s 10 GHz f Self Aligned Transistor SAT process The die is nitride passivated for surface protection Excellent device uniformity performance and reliability are produced by the use of ion implantation self alignment techniques and gold metalization in the fabrication of this device The recommended assembly proced
3. 53 56 AT 42000 Typical Scattering Parameters Common Emitter Zo 50 Q Ta 25 C Vog 8 Vi Ig 35mMA Freq Siu 825 Sie 822 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0 1 AQ 96 33 0 44 61 143 40 9 009 65 79 24 0 5 62 163 22 8 13 87 98 34 4 019 58 42 26 1 0 63 179 17 2 1 25 86 30 5 030 70 38 22 15 63 171 13 5 4 74 78 27 7 041 76 38 23 2 0 65 168 11 2 3 62 72 25 4 054 79 38 25 2 5 65 159 93 2 90 67 23 6 066 82 38 27 3 0 68 154 78 2 44 60 22 1 079 82 38 29 3 5 67 148 6 5 2 12 57 20 6 093 84 39 32 4 0 69 144 5 3 1 83 51 19 7 104 86 40 34 4 5 TO 139 4 4 1 65 47 18 3 121 86 41 40 5 0 TO 137 3 3 1 46 43 17 5 133 85 42 44 5 5 72 131 2 7 1 36 38 16 5 149 86 Al 48 6 0 TA 128 1 7 1 22 3A 15 7 164 85 44 55 A model for this device is available in the DEVICE MODELS section AT 42000 Noise Parameters Vcr 8 V Ic 10 mA Freq NFo Topt GHz dB Mag Ang m 0 1 1 0 04 13 0 13 0 5 1 1 05 69 0 13 1 0 1 5 09 127 0 12 2 0 1 9 23 171 0 11 4 0 3 0 AT 154 0 14 4 152 AT 42000 Chip Dimensions 90um 1 18 mil DIA Base Pad 90 um 305 um 3 54 mil 12 mil Emitter Pad 305 um 12 mil Note Die thickness is 5 to 6 mil 4 153
4. or Compressed Gain vs Collector Collector Current and Frequency Current and Frequency Vcg 8 V Current and Voltage f 2 0 GHz Vcg 28V 13 40 24 35 is 21 a ET 10 V iu MSG 18 kJ 25 15 z 6v e in q g 10 3v z 20 z 12 4 i q u 15 MaG S 9 3 a 9 S21El I 10 6 2 8 NFo 5 3 1 7 0 0 0 0 10 20 30 40 50 0 1 0 3 0 5 1 0 3 0 6 0 0 5 1 0 20 3 0 4 0 5 0 Ic mA FREQUENCY GHz FREQUENCY GHz Figure 4 Insertion Power Gain vs Figure 5 Insertion Power Gain Figure 6 Noise Figure and Associated Collector Current and Voltage Maximum Available Gain and Gain vs Frequency f 2 0 GHz Maximum Stable Gain vs Frequency Vcg 8V 1 2 10mA Vcr z 8 V lc 35 mA 4 151 NFo dB AT 42000 Typical Scattering Parameters Common Emitter Zo 50 Q T 25 C Vog 8 Vi Ig 10mA Freq Si S21 8i S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0 1 TO 50 28 0 25 19 155 37 7 013 71 92 14 0 5 67 136 20 9 11 04 108 30 5 030 43 57 27 1 0 66 166 15 7 6 08 90 28 9 036 47 50 24 15 66 173 12 1 4 02 86 28 2 039 52 A8 23 2 0 66 179 9 8 3 09 82 27 5 042 57 AT 23 2 5 67 170 78 2 46 74 26 0 050 66 AT 23 3 0 67 165 6 3 2 08 68 24 7 058 72 AT 26 3 5 70 157 5 1 1 80 61 23 4 068 77 AT 28 4 0 NU 151 39 1 56 57 21 8 081 82 A48 30 4 5 71 145 29 1 40 51 20 7 092 86 50 34 5 0 NS 138 19 1 24 Al 19 3 109 87 51 38 5 5 74 132 12 1 15 36 17 2 138 88 51 50 6 0 76 129 0 2 1 02 32 16 3 154 87
5. ure is gold eutectic die attach at 400 C and either wedge or ball bonding using 0 7 mil gold wire See APPLICATIONS section Chip Use 4 149 HEWLETT U PACKARD AT 42000 Chip Outline 5965 8909E AT 42000 Absolute Maximum Ratings Thermal Resistance 4 je 70 C W Part Number Ordering Information 1 Permanent damage may occur if any of these limits are exceeded 2 T Mounting Surface 25 C 3 Derate at 14 3 mW C for TMounting Surface gt 158 C The small spot size of this tech Absolute Symbol Parameter Units Maximum Vepo Emitter Base Voltage V 1 5 Vero Collector Base Voltage V 20 Notes Vcgo Collector Emitter Voltage V 12 Ic Collector Current mA 80 Pr Power Dissipation 221 mW 600 T Junction Temperature C 200 Tstq Storage Temperature C 65 to 200 4 nique results in a higher though more accurate determination of Oje than do alternate methods See MEASUREMENTS section Part Number Devices Per Tray Thermal Resistance for more AT 42000 GP4 100 information Electrical Specifications T 25 C Symbol Parameters and Test Conditions Units Min Typ Max Soz Insertion Power Gain Vog 8 V Ic 35 mA f 2 0GHz dB 11 5 f 4 0 GHz 5 5 Pi aB Power Output 1 dB Gain Compression f 2 0GHz dBm 21 0 Vor 8 V Ic 35 mA f 4 0 GHz 20 5 Gig 1

HP AT-42000 Technical Data

Contents

Download Pdf Manuals

Related Search

Related Contents