RENESAS HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer
Contents
1. 00 38 00 2 2 27 0 90 2 Note 1 Tested with pulse P 40 ms 2RENESAS Rev 7 Dec 2002 page 5 of 9 HZU Series Mark Code Type Grade MarK No Type Grade Mark No Type Grade Mark No HZU2 0 B 2 0 HZU6 2 B1 6 2 HZU13 B1 13 HZU2 2 B 2 2 B2 6 2 B2 13 HZU2 4 B 2 4 B3 6 2 B3 13 HZU2 7 B1 2 7 HZUG 8 B1 6 8 HZU15 B1 15 B2 2 7 B2 6 8 B2 15 HZU3 0 B1 3 0 B3 6 8 B3 15 B2 3 0 HZU7 5 B1 7 5 HZU16 B1 16 HZU3 3 B1 3 3 B2 7 5 B2 16 B2 3 3 B3 7 5 B3 16 HZU3 6 B1 3 6 HZU8 2 B1 8 2 HZU18 B1 18 B2 3 6 B2 8 2 B2 18 HZU3 9 B1 3 9 B3 8 2 B3 18 B2 3 9 HZU9 1 B1 9 1 HZU20 B1 20 HZU4 3 B1 4 9 B2 9 1 B2 20 B2 4 9 B3 9 1 B3 20 B3 4 3 HZU10 B1 10 HZU22 B1 22 HZUA 7 B1 4 7 B2 10 B2 22e B2 4 7 B3 10 B3 22 B3 4 7 HZU11 B1 11 HZU24 B1 24e HZU5 1 B1 Bei B2 11 B2 24e B2 Bei B3 11 B3 24e B3 5 1 HZU12 B1 12 HZU27 B 27 HZU5 6 B1 5 6 B2 12 HZU30 B 30 B2 5 6 B3 12 HZU33 B 33e B3 5 6 HZU36 B 36e Notes 1 Example of Marking 1 One grade type B 2 Two grade type B1 B2 3 Three grade type B1 B2 B3 Upper Center Lower 200 O 30e 3 0 3e0 4 5 483 m HZU2 0B HZU30B HZU32. 2 50 2 75 B2 2 65 2 90 HZU3 0 B 2 80 3 20 5 50 1 0 120 5 B1 2 80 3 05 B2 2 95 3 20 HZU3 3 B 3 10 3 50 5 20 1 0 130 5 B1 3 10 3 35 B2 3 25 3 50 HZU3 6 B 3 40 3 80 5 10 1 0 130 5 B1 3 40 3 65 B2 3 55 3 80 HZU3 9 B 3 70 4 10 5 10 1 0 130 5 B1 3 70 3 97 B2 3 87 4 10 Note 1 Tested with pulse P 40 ms Rev 7 Dec 2002 page 2 of 9 34 N SAS Zener Voltage Reverse Current HZU Series Dynamic Resistance Test Test Test V V Condition 1 uA Condition r Q Condition Type Grade Min Max L mA Max V V Max L mA HZU4 3 B 4 01 4 48 5 10 1 0 130 5 B1 4 01 4 21 B2 4 15 4 34 B3 4 28 4 48 HZU4 7 B 4 42 4 90 5 10 1 0 130 5 B1 4 42 4 61 B2 4 55 4 75 B3 4 69 4 90 HZU5 1 B 4 84 5 37 5 5 1 5 130 5 Di 4 84 5 04 B2 4 98 5 20 B3 5 14 5 37 HZU5 6 B 5 31 5 92 5 5 2 5 80 5 B1 5 31 5 55 B2 5 49 5 73 B3 5 67 5 92 HZUG 2 B 5 86 6 53 5 2 3 0 50 5 Di 5 86 6 12 B2 6 06 6 33 B3 6 26 6 53 HZU6 8 B 6 47 7 14 5 2 3 5 30 5 Di 6 47 6 73 B2 6 65 6 93 B3 6 86 7 14 HZU7 5 B 7 06 7 84 5 2 4 0 30 5 B1 7 06 7 36 B2 7 28 7 60 B3 7 52 7 84 HZU8 2 B 7 76 8 64 5 2 5 0 30 5 Di 7 76 8 10 B2 8 02 8 36 B3 8 28 8 64 Note 1 Tested with pulse P 40 ms 34 N SAS Rev 7 Dec 2002 page 3 of 9 HZU Series Zener Voltage Reverse Cu
3. responsibility for any damage liability or other loss rising from these inaccuracies or errors Please also pay attention to information published by Renesas Technology Corporation by various means including the Renesas Technology Corporation Semiconductor home page http www renesas com When using any or all of the information contained in these materials including product data diagrams charts programs and algorithms please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products Renesas Technology Corporation assumes no responsibility for any damage liability or other loss resulting from the information contained herein Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes such as apparatus or systems for transportation vehicular medical aerospace nuclear or undersea repeater use The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials If these products or technologies are subject to the Japanese export control restrictions they must be exported
4. under a license from the Japanese government and cannot be imported into a country other than the approved destination Any diversion or reexport contrary to the export control laws and regulations of Japan and or the country of destination is prohibited Please contact Renesas Technology Corporation for further details on these materials or the products contained therein HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer 24 NE SAS Features ADE 208 024G Z Rev 7 Dec 2002 e Ultra small Resin Package URP is suitable for surface mount design e These diodes are delivered taped Ordering Information Type No Mark Package Code HZU Series Let to Mark Code URP Pin Arrangement Cathode mark Mark 1 2e0 T2 EE 1 Cathode 2 Anode HZU Series Absolute Maximum Ratings Ta 2 25 C Item Symbol Value Unit Power dissipation Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Note 1 With P C Board Electrical Characteristics Ta 25 C Zener Voltage Reverse Current Dynamic Resistance Test Test Test vV V Condition L uA Condition r Q Condition Type Grade Min Max L mA Max V V Max L mA HZU2 0 B 1 90 2 20 5 120 0 5 100 5 HZU2 2 B 2 10 2 40 5 120 0 7 100 5 HZU2 4 B 2 30 2 60 5 120 1 0 100 5 HZU2 7 B 2 50 2 90 5 120 1 0 110 5 B1
5. 0B1 HZU3 0B2 HZU4 3B1 HZU4 3B2 HZU4 3B3 The grade B type includes from B1 min to B3 or B2 max B grade is standard and has better delivery These are marked one of B1 B2 B3 Type No is as follows HZU2 0B HZU2 2B see HZU36B B grade Type No is as follows HZU2 7B1 HZU2 7B2 see HZU24B3 B 1 B2 B3 grade bro hu Rev 7 Dec 2002 page 6 of 9 34 N ESAS HZU Series Main Characteristic X OQorWIDNT OL M C4 COCO stLOCO P COO r T 222222022222 2 2 NNNNNNNNNNN N N IIIIIIIIITI I I o A ML t 8 T E N 6 o 5 ei sl fot te Qt at Eist Si S 2 5 gt 12 DI DI 23 2 2 5 N NIIN IN NIN N N N N o 4rr rat II III I o c o N 2 oo 2 N L 0 4 8 12 16 20 24 28 32 36 40 Zener Voltage Vz V Fig 1 Zener current vs Zener voltage 0 10 250 0 09 1 5mm 0 8mm DC E eae 0 08 40 m aU HE 007 3 H _ 200 L cure x 0 06 30 t z N 0 03 25 P E Printed circuit board N x 20x 1 M Gei mV C a Zi 150 Majera D 5 0 03 15 5 Glass Epoxy Resin Cu Foil 9 002 10 o 5 9 0 01 5 9 a oO 0 D e 8 100 5 0 01 5 gs a Ot o8 o 35 0 02 10 EL 2 oo 0 03 15 52 amp 5 004 20 5 50 NE NE 0 0
6. 5 25 0 06 0 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 Zener Voltage Vz V Ambient Temperature Ta C Fig 2 Temperature Coefficient vs Zener voltage Fig 3 Power Dissipation vs Ambient Temperature Rev 7 Dec 2002 page 7 of 9 34 N ESAS HZU Series Package Dimensions D 172015 Dea yk I ee o 2 5 0 15 e o o e un o F o S 1 25 0 15 As of July 2002 Unit mm Hitachi Code JEDEC Conforms JEITA Mass reference value 0 004 g Rev 7 Dec 2002 page 8 of 9 34 N ESAS HZU Series Disclaimer 1 Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent copyright trademark or other intellectual property rights for information contained in this document Hitachi bears no responsibility for problems that may arise with third party s rights including intellectual property rights in connection with use of the information contained in this document 2 Products and product specifications may be subject to change without notice Confirm that you have received the latest product standards or specifications before final design purchase or use 3 Hitachi makes every attempt to ensure that its products are of high quality and reliability However contact Hitachi s sales office before using the product in an application that demands especially high quality and relia
7. To all our customers Regarding the change of names mentioned in the document such as Hitachi Electric and Hitachi XX to Renesas Technology Corp The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 These operations include microcomputer logic analog and discrete devices and memory chips other than DRAMs flash memory SRAMS etc Accordingly although Hitachi Hitachi Ltd Hitachi Semiconductors and other Hitachi brand names are mentioned in the document these names have in fact all been changed to Renesas Technology Corp Thank you for your understanding Except for our corporate trademark logo and corporate statement no changes whatsoever have been made to the contents of the document and these changes do not constitute any alteration to the contents of the document itself Renesas Technology Home Page http www renesas com Renesas Technology Corp Customer Support Dept April 1 2003 24 N SAS Renesas Technology Corp Cautions Keep safety first in your circuit designs 1 Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable but there is always the possibility that trouble may occur with them Trouble with semiconductors may lead to personal injury fire or property damage Remember to give due consideration to safety when making your circuit designs with appropriat
8. bility or where its failure or malfunction may directly threaten human life or cause risk of bodily injury such as aerospace aeronautics nuclear power combustion control transportation traffic safety equipment or medical equipment for life support 4 Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating operating supply voltage range heat radiation characteristics installation conditions and other characteristics Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges Even within the guaranteed ranges consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail safes so that the equipment incorporating Hitachi product does not cause bodily injury fire or other consequential damage due to operation of the Hitachi product 5 This product is not designed to be radiation resistant No one is permitted to reproduce or duplicate in any form the whole or part of this document without written approval from Hitachi 7 Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products Sales Offices HITACHI Hitachi Ltd Semiconductor amp Integrated Circuits Nippon Bldg 2 6 2 Ohte machi Chiyoda ku Tokyo 100 0004 Japan Tel 03 3270 2111 Fax 03 3270 5109 URL http www hitachisemiconductor com F
9. e measures such as i placement of substitutive auxiliary circuits ii use of nonflammable material or iii prevention against any malfunction or mishap Notes regarding these materials 1 These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer s application they do not convey any license under any intellectual property rights or any other rights belonging to Renesas Technology Corporation or a third party Renesas Technology Corporation assumes no responsibility for any damage or infringement of any third party s rights originating in the use of any product data diagrams charts programs algorithms or circuit application examples contained in these materials All information contained in these materials including product data diagrams charts programs and algorithms represents information on products at the time of publication of these materials and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons Itis therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein The information described here may contain technical inaccuracies or typographical errors Renesas Technology Corporation assumes no
10. or further information write to Hitachi Semiconductor Hitachi Europe Ltd Hitachi Asia Ltd Hitachi Asia Hong Kong Ltd America Inc Electronic Components Group Hitachi Tower Group III Electronic Components 179 East Tasman Drive Whitebrook Park 16 Collyer Quay 20 00 7 F North Tower San Jose CA 95134 Lower Cookham Road Singapore 049318 World Finance Centre Tel 1 408 433 1990 Maidenhead Tel lt 65 gt 6538 6533 6538 8577 Harbour City Canton Road Fax lt 1 gt 408 433 0223 Berkshire SL6 8YA United Kingdom Fax lt 65 gt 6538 6933 6538 3877 Tsim Sha Tsui Kowloon Hong Kong Tel 44 1628 585000 URL http semiconductor hitachi com sg Tel lt 852 gt 2735 9218 Fax 44 1628 778322 Fax lt 852 gt 2730 0281 i m URL http semiconductor hitachi com hk Hitachi Europe GmbH Hitachi Asia Ltd Electronic Components Group Taipei Branch Office Dornacher Str 3 4 F No 167 Tun Hwa North Road D 85622 Feldkirchen Hung Kuo Building Postfach 201 D 85619 Feldkirchen Taipei 105 Taiwan Germany Tel lt 886 gt 2 2718 3666 Tel 49 89 9 9180 0 Fax lt 886 gt 2 2718 8180 Fax lt 49 gt 89 9 29 30 00 Telex 23222 HAS TP URL http semiconductor hitachi com tw Copyright Hitachi Ltd 2002 All rights reserved Printed in Japan Colophon 7 0 Rev 7 Dec 2002 page 9 of 9 2RENESAS
11. rrent Dynamic Resistance Test Test Test V V Condition l uA Condition r Q Condition Type Grade Min Max L mA Max V V Max L mA HZU9 1 B 8 56 9 55 5 2 6 0 30 5 B1 8 56 8 93 B2 8 85 9 23 B3 9 15 9 55 HZU10 B 9 45 10 55 5 2 7 0 30 5 B1 9 45 9 87 B2 9 77 10 21 B3 10 11 10 55 HZU11 B 10 44 11 56 5 2 8 0 30 5 B1 10 44 10 88 B2 10 76 11 22 B3 11 10 11 56 HZU12 B 11 42 12 60 5 2 9 0 35 5 B1 11 42 11 90 B2 11 74 12 24 B3 12 08 12 60 HZU13 B 12 47 13 96 5 2 10 0 35 5 B1 12 47 13 03 B2 12 91 13 49 B3 13 37 13 96 HZU15 B 13 84 15 52 5 2 11 0 40 5 Di 13 84 14 46 B2 14 34 14 98 B3 14 85 15 52 HZU16 B 15 37 17 09 5 2 12 0 40 5 B1 15 37 16 01 B2 15 58 16 51 B3 16 35 17 09 HZU18 B 16 94 19 03 5 2 13 0 45 5 B1 16 94 17 70 B2 17 56 18 35 B3 18 21 19 03 Note 1 Tested with pulse P 40 ms Rev 7 Dec 2002 page 4 of 9 2RENESAS Zener Voltage Reverse Current HZU Series Dynamic Resistance Test Test Test V V Condition l WA Condition r Q Condition Type Grade Min Max L mA Max V V Max L mA HZU20 B 18 86 21 08 5 2 15 0 50 5 B1 18 86 19 70 B2 19 52 20 39 B3 20 21 21 08 HZU22 B 20 88 23 17 5 2 17 0 55 5 B1 20 88 21 77 B2 21 54 22 47 B3 22 23 23 17 HZU24 B 22 93 25 57 5 2 19 0 60 5 B1 22 93 23 96 B2 23 72 24 78 B3 24 54 25 57 HZU27 B 25 10 28 90 2 2 21 0 70 2 HZU30 B 28 00 32 00 2 2 23 0 80 2 HZU33 B 31 00 35 00 2 2 25 0 80 2 HZU36 B 34
Download Pdf Manuals
Related Search