SAPseries Darlington transistors with built-in temperature compensation diodes for audio amplifier applications
Contents
1. Darlington transistors with built in temperature compensation diodes for audio amplifier applications SAP h5eries Features OG Built in temperature compensation diodes and one emitter resistor G Real time temperature compensation The temperature compensation diodes are mounted on one chip and placed in the center of the chip to detect temperature rises directly OG Elimination of the temperature dependency of the idling current The temperature coefficient of the diodes is optimized to have the idling current stabilized thus one of the fatal failure modes in conventional Darlington transistors Thermal Runaway is avoidable Symmetrical design for the PNP and the NPN pinouts The new design minimizes the length of the pattern layout and output distortions are controlled Darlington transistors temperature compensation diodes and one emitter resistor are incorporated in one package so labor for parts insertion as well as the parts count is reduced Line up Part Number Pc W Vceo V Ic A hFE Emitter resistor Q SAP15P SAP15N 150 160 15 5000 to 20000 0 22 SAP10P SAP10N 100 150 12 5000 to 20000 0 22 SAP08P SAPO8N 80 150 10 5000 to 20000 0 22 WExternal Dimentions Unit mm 15 4403 3 2502 si j a 1 1 2 54204 2 54304 3 8159 7 62 3 81591 oo 90 Weight approx 82. 3 Characteristics of the temperature compensation diodes The several temperature compensation diodes are connected in series so the forward voltage is varied with small current fluctuations Therefore in case the forward current flowing over the diodes is set at 2 5mA and over the forward voltage rises and in the worst combinations the idling current reaches to 40mA and over with minimum VR of 0 On the contrary in case the forward current is set at 2 5mA or below the idling current may not reach to 40mA with maximum VR of 2000 10 0 Ta 25 C e SBD o vs PN Di 6 diodes Toi PW D SBD 5 0 T E m 1 0 0 500 1000 1500 2000 2500 3000 VF mV IF VF Characteristics 4 Parallel push pull application Adjustments of the idling current are required by each the resistor in parallel push pull applications One side adjustment will cause the idling current to be unstable seesaw operation because of the different hFE To be adjusted individually 5 Destruction capacity of the built in emitter resistor The built in resistor is fabricated with polysilicone on the chip for the SAPO8P N and a thick film resistor is used for the SAPIOP N and SAPISP N The latter the thick film resistor has weaker destruction point in the Pc area especially for large current flowing area rather than that of the transistor chip itself This is subject to the area beyond Safe O
3. 3g a Part Number b Lot Number WEquivalent Circuit Diagram NPN D R 709 Typ Emitter resistor RE 0 220 Typ PNP R 700 Typ Emitter resistor RE 0 220 Typ S E Application Information Eee 1 Recommended Operating Conditions Add a variable resistor VR between diode terminals to adjust the idling current The resistor having 0 to 2000 is to be used Adjust the forward current flowing over the diodes at 2 5mA Adjust the idling current at 40mA with the external variable resistor Both the temperature coefficients for the transistor and the diodes are matched under the above conditions Both the PNP and the NPN are Darlington transistors so the temperature change ratio of the total four VBE of the transistors is subject to the compensation One PN junction diode in the NPN and five Schottky barrier diodes in the PNP are built in and the total six diodes are operating as the temperature compensation The temperature coefficient of the total diodes its variable value becomes smaller with a larger forward current approximately 0 2mV C to 1mA and the coefficient of the total transistors its variable value also becomes smaller with a larger idling current approximately 0 1mV C to 10mA but the both variable values are small Thus the distortion of the temperature coefficient caused by the different current is small so the thermal runaway may not be occurred due to the ch
4. O VCE sat Ic 6A IB 6mA 2 0 V PL eT Pc 80 Tc 25 C W ee Rm VBE sat Ic 6A IB 6mA 25 V m 9 ria ia V Vcr 20V Ic 40mA 1220 V S AN BE CE 2 20V Icz 40m m Ja ai Tj 150 C bz Di Vr IFz2 5mA 705 mV Ban Tstg 55 to 4150 C 3 81421 AA 1 62 M S S S S I LLLI Re lE 1A 0 176 0 22 0 264 Q 127 Rank O 5000 to 12000 Y 8000 to 20000 ma Weight Approx 8 3g a Part Number Tho EF b Lot Number Ic Vcr Characteristics Typical VcE sat lgp Characteristics Typical Ic VBE Temperature Characteristics Vce 4V 10 toma SS TamA 4 oh 5 i 2 5mA J 2 0mA 1 8mA oS D s 8 T S z o o smA o g 6 Z z 9 E 3 w S S 0 3mA E 9 EA A g o o o 2 5 RD 8 Ip 0 2mA 8 2 ul 8 3 5 0 a 0 2 4 6 03 05 1 5 10 50 100 0 1 2 3 Collector Emitter Voltage Vce V Base Current lg mA Base Emitter Voltage VBE V hre Ic Characteristics Typical j a t Characteristics 50000 ia 8 z w J 2 E 725 C z 10000 f25 C T B 2 5000 30 C a S o5 Q 1000 500 5 200 on 0 03 0 1 05 1 5 10 1 5 10 50 100 500 1000 2000 Collector Current Ic A Time t ms Safe Operating Area Single Pulse Pc Ta Derating 30 10 7o x Cn Gs at So 558 E e E o m 1 o E i 3 a 3 05 E E Without Heatsink 8 Natural Cooling 0 1 Without Heatsink 0 05 o ITE 10 50 100 200 0 25 50 75 100 125 150 Collector Emitter Voltage Vce V Ambient Temperature Ta C
5. anges of the recommended ratings however the actual operation is to be confirmed by using an experimental equipment or board External variable resistor VR 0 to 2000 2 External Variable Resistor Total forward voltage at IF 2 5mA of the diodes is designed to be equal or less than that of total VBE at Ic 40mA of the transistor thus the idling current is required to be adjusted at 40mA with an additional external variable resistor The relations are shown as below Total Vr of Diode lt Total Vee of Transistor Total Vre of Emitter Resistor AV 0 to 500mV The VBE of the transistor is dependent to the hFE and the VBE is lower with higher hFE and vice versa The hre for both the PNP and the NPN varies between 5k and 20k thus the VBE is the lowest with the combination of maximum hre 20k each and it is the highest with the combination of minimum hre 5k each Presuming the voltage difference between the Vr of the diodes and the VBE of the transistors including the total voltage drops of the two emitter resistors as AV Minimum Vege Maximum VF variations of the diodes 0 Maximum Vege Minimum VF variations of the diodes 500mV The current flowing over the diodes and the VR is adjusted at 2 5mA therefore 500mV 2 5mA 2004 Consequently the applicable VR value is to be 0 to 200Q Vee Min VBE Max P and N hre Max P and N hre Min 40mA Variations AVF 500mV
6. nal emitter resistor Output terminal Equivalent circuit B S RETO TP 5 Emitter resistor RE 0 220 Typ D Complement to type SAPO8P Application Audio MAbsolute maximum ratings Ta 25 c MiElectrical Characteristics Ta 25 C External Dimensions Unit mm Symbol Ratings Unit Symbol Conditions Ratings Unit min typ max tgates 32 daa VcBo 150 V Ern asii IcBo VcB 150V 100 pA F E 1 67 VcEO 150 V E tb IEBO VEB 5V 100 uA TA EN Mss V Ic 30mA 150 v eo di CEO c 30m E lala Ic 10 A Fan a8 1 5 hre VcE 4V Ic 6A 5000 20000 B oc gy 8 8 B
7. perating Area S O A However under the evaluation like a short circuit test in which the current exceeds the guaranteed value it may cause the emitter resistor to be destroyed before the transistor itself is destroyed Consequently the current value or time that operates the protection circuit is to be set at lower than that of discrete device configurations In the application of car audio amplifiers the same manners as the above need to be considered because the large current is flowed at low impedance In addition once the transistor falls into thermal runaway due to a soldering failure to the external VR added between diodes or other failure manners as the worst case there may cause a resin crack or smoke emissions by flare up Flame retardant molding resin is used and the material of the product is conformed to the most sever standard UL94V0 However it is recommended that the careful consideration be given to a protection circuit and the protection circuits should be provided appropriately in due course If the operating conditions are not to be matched to the ratings it is also recommended that the E Emitter resistor terminal should be opened and the external emitter resistor should be added to the S Sensing terminal shown as below However this is not applicable to the SAPO8P N because a thin inner lead is used for S terminal X Transistor destruction point Thick film resistor destruction point Exter
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