MEC UPA1764 Data Sheet
Contents
1. lt 1 2 Mounted on ceramic substrate of 2000 mm x 2 2 mm 3 Starting Teh 25 C Ra 25 Q Vas 20 V gt 0V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD When this device actually used an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device The information in this document is subject to change without notice Before using this document please confirm that this is the latest version Not all devices types available in every country Please check with local NEC representative for availability and additional information Document No G14329EJ1VODS00 1st edition The mark shows maior revised points Date Published January 2000 NS CP K J p NEC Corporation 1999 2000 Printed in Japan NEC uPA1764 ELECTRICAL CHARACTERISTICS Ta 25 C All terminals are connected Drain to Source On state Resistance Ves 10 V Ib 3 5 A 27 35 me Forward Transter Admittance Ive Ves t0W to 354 50 co s Drain Leakage Curent we vos a0vivessov ofal Gate to Source Leakage Current less ves s20v vs 0v faofa pr lo 35A Veson 10V Vas 30 V Re 100 6 70 Gate to Source Charge Qas Voo 48 V Gate to Drain Charge Vas 10 V Body Diode Forward Voltage lF 7 0 A Ves 0 V Reverse Recovery Time le 7 0 A Ves 0 V Reverse Recovery Charge di dt 100 A us2. DATA SHEET MOS FIELD EFFECT TRANSISTOR uPA1764 NEC SWITCHING DUAL N CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit mm The uPA1764 is N channel MOS Field Effect Transistor designed for high current switching m 8 applications 5 E oe 7 8 Drain 1 FEATURES 4 Gates e Dual chip type 5 6 Drain 2 e Low On state Resistance Roston t 27 MQA TYP Ves 10 V lo 3 5 A 6 0 0 3 Ros on 2 32 MQ TYP Ves 4 5 V Ib 3 5 A x 5 37 MAX 44 L 08 _ Ros on 3 34 MQ TYP Vas 4 0 V Ib 3 5 A x a e Low input capacitance Ep it _ Ciss 1300 pF TYP an ee e Built in G S protection diode Z Zi 010 e Small and surface mount package Power SOP8 9 S 0 12 M ORDERING INFORMATION PART NUMBER PACKAGE EQUIVALENT CIRCUIT 1 2 circuit ABSOLUTE MAXIMUM RATINGS Ta 25 C All terminals are connected Drai Drain to Source Voltage Voss 60 V Gate to Source Voltage Vass 20 V i Body Drain Current DC ID Dc 7 A Gate Diode Drain Current pulse Note D pulse 28 A Total Power Dissipation 1 unit N Pr 17 W Gate a Fi SiO Protection Source Total Power Dissipation 2 unit Pr 2 0 WwW Diode Channel Temperature Teh 150 C Storage Temperature Tstg 55t0 150 C Single Avalanche Current Note las 7 A Single Avalanche Energy Ne Eas 98 mJ Notes 1 PW lt 10 us Duty Cycle
3. TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D U T Re 250 E L PG A 50 Q Voo ae Form Ves 20 gt 0 V ae PG Io 0 Wave Form Eu t 1us Duty Cycle lt 1 TEST CIRCUIT 3 GATE CHARGE D U T H la 2 mA Ke RL PG 500 i 777 2 Data Sheet G14329EJ1V0DS00 NEC uPA1764 MEMO Data Sheet G14329EJ1V0DS00 3 NEC uPA1764 e The information in this document is subject to change without notice Before using this document please confirm that this is the latest version e No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation NEC Corporation assumes no responsibility for any errors which may appear in this document e NEC Corporation does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device No license either express implied or otherwise is granted under any patents copyrights or other intellectual property rights of NEC Corporation or others e Descriptions of circuits software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples The incorporation of these circuits software and information in the design of the customer
4. s equipment shall be done under the full responsibility of the customer NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits software and information While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices the possibility of defects cannot be eliminated entirely To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device customers must incorporate sufficient safety measures in its design such as redundancy fire containment and anti failure features e NEC devices are classified into the following three quality grades Standard Special and Specific The Specific quality grade applies only to devices developed based ona customer designated quality assurance program for a specific application The recommended applications of a device depend on its quality grade as indicated below Customers must check the quality grade of each device before using it in a particular application Standard Computers office equipment communications equipment test and measurement equipment audio and visual equipment home electronic appliances machine tools personal electronic equipment and industrial robots Special Transportation equipment automobiles trains ships etc traffic control systems anti disaster systems anti crime systems safety equipmen
5. t and medical equipment not specifically designed for life support Specific Aircraft aerospace equipment submersible repeaters nuclear reactor control systems life support systems or medical equipment for life support etc The quality grade of NEC devices is Standard unless otherwise specified in NEC s Data Sheets or Data Books If customers intend to use NEC devices for applications other than those specified for Standard quality grade they should contact an NEC sales representative in advance M7 98 8
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MEC UPA1764 Data Sheet mec-t1764