MITSUBISHI SEMICONDUCTOR MGF0919A
Contents
1. Fig 1 HSO TST SSI S22 KO MAG SGI bt bi tietatik Gate Mark Round corner Wa 1 Gate BACK SIDE PATTERN 2 Drain 3 Source Unit mm Fig 1 OUTLINE DRAWING Mitsubishi Electric June 2004 MITSUBISHI SEMICONDUCTOR lt GaAs FET gt MGF0919A L amp S BAND GaAs FET SMD non matched Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability Despite these concerted efforts however there will be occasions when our semiconductor products suffer breakdowns malfunctions or other problems In view of this reality it is requested that every feasible precaution be taken in the pursuit of redundancy design malfunction prevention design and other safety related designs to prevent breakdowns or malfunctions in our products from resulting in accidents involving people fires social losses or other problems thereby upholding the highest levels of safety in the products when in use by customers Matters of Importance when Using these Materials 1 These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications Please be aware however that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation 2 Mitsubishi Electric2. 2 18 M GFO919A JENE MITSUBISHI SEMICONDUCTOR lt GaAs FET gt MGF0919A L amp S BAND GaAs FET SMD non matched DESCRIPTION The MGF0919A GaAs FET with an N channel schottky Gate is designed for use UHF band amplifiers FEATURES e High output power Po 30dBm TYP f 1 9GHz Pin 12dBm e High power gain Gp 19dB TYP f 1 9GHz e High power added efficiency nadd 37 TYP f 1 9GHz Pin 12dBm e Hermetic Package APPLICATION e For UHF Band power amplifiers QUALITY GG RECOMMENDED BIAS CONDITIONS eVds 10V elds 300mA Rg 5002 Delivery 01 Tape amp Reel 1K 03 Trai 50pcs Absolute maximum ratings Ta 25 C E berda ma Pr Totalpowersissipaton 6e w Electrical characteristics Ta 25 C Inss__ Saturated drain current VDS 3V VGS 0V o ma VGS off Gate to source cut off voltage VDS 3V ID 2 0mMA Ean ps Pin 12dBm dea eda 10V ID 300mA f 1 9GHz eens Pinero Toma era ee r ow 1 Channel to case Above parameters ratings limits are subject to change Mitsubishi Electric June 2004 MGF0919A TYPICAL CHARACTERISTICS Po Gp PAE vs Pin Vds 10V_ Id off 300mA f 1 9GHz Gp dBm PAE Pin dBm Pi SCL vs Po SCL IM3 P f1 1 90GHz f2 1 91Ghz IM3 dBc Po SCL dBm 0 5 10 15 20 Pin SCL dBm Mitsubishi Electric June 2004 MGF0919A S PARAMETERS Ta 25 C VD 10V ID 300mA Reference Plane see
3. does not assume responsibility for damages resulting from the use of product data graphs charts programs algorithms or other applied circuit examples described in these materials or for the infringement of the rights of third party owners resulting from such use 3 The data graphs charts programs algorithms and all other information described in these materials were current at the issue of these materials with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice Before purchasing Mitsubishi Electric semiconductor products therefore please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer 4 Every possible effort has been made to ensure that the information described in these materials is fully accurate However Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials 5 When using the product data technical contents indicated on the graphs charts programs or algorithms described in these materials assessments should not be limited to only the technical contents programs and algorithm units Rather it is requested that ample evaluations be made of each individual system as a whole with the customer assuming full responsibility for decisions on the propriety of application Mitsubishi Electric does not accept responsibility for
4. the propriety of application 6 The products described in these materials with the exception of special mention concerning use and reliability have been designed and manufactured with the purpose of use in general electronic machinery Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability When considering the use of the products described in these materials in transportation machinery automobiles trains vessels for ddjectives related to medical treatment aerospace nuclear power control submarine repeaters or systems or other specialized applications please consult with Mitsubishi Electric directly or an authorized dealer 7 When considering use of products for purposes other than the specific applications described in these materials please inquire at Mitsubishi Electric or an authorized dealer 8 The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials 9 Please direct any inquiries regarding further details of these materials or any other comments or matters of attention to Mitsubishi Electric or an authorized dealer Mitsubishi Electric June 2004
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MITSUBISHI SEMICONDUCTOR MGF0919A