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SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 handbook

1. I 2 ge g A LL gt 2 5 3 8 ILLI 9 uo 5 B 3 a m Br T x o I 8 Si e eu EIL 5 gt E a ES ut 2 RAE SUE 2 o 9 cn pete o Semiconductor Group SIEMENS DC current gain f Ic 10 V 3855 ae gt 10 de Wd Pa 0 107 10 10 102 mA 10 Semiconductor Group BSS 80 BSS 82 WWW ALLDATASHEET COM Copyright Each Manufacturing Company All Datasheets cannot be modified without permission This datasheet has been download from www AllDataSheet com 100 Free DataSheet Search Site Free Download No Register Fast Search System www AllDataSheet com
2. 2 18 Q62702 A82 hv Fi SIEMENS PNP Silicon Switching Transistors High DC current gain Low collector emitter saturation voltage Complementary types BSS 79 BSS 81 NPN Type Marking BSS 80 CHs Q62702 S557 BSS 80 Cus Q62702 S492 BSS 82 CLs Q62702 S560 BSS 82 CMs Q62702 S482 Maximum Ratings Parameter Collector emitter voltage Collector base voltage BSS 80 BSS 82 Package SOT 23 Values Unit BSS 80 BSS 82 Emitter base voltage Collector current Peak collector current Base current Peak base current Total power dissipation Ts 77 C Prot 330 mW Junction temperature 150 Storage temperature range 65 150 Thermal Resistance Junction ambient Rin JA 290 K W Junction soldering point Rin Js 220 1 For detailed information see chapter Package Outlines 2 Package mounted on epoxy pcb 40 mm x 40 mm x 1 5 mm 6 cm Cu Semiconductor Group 1 SIEMENS BSS 80 BSS 82 Electrical Characteristics at Ta 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC characteristics Collector emitter breakdown voltage Vipr ceo V Ic 2 10 mA BSS 80 40 55 82 60 Collector base breakdown voltage Ic 10 uA Emitter base breakdown voltage 10 uA Collector base cutoff current 50 50 V Ta 150 C Emitter base cutoff current
3. EMENS BSS 80 BSS 82 Total power dissipation f T Ts Collector base capacitance Co f Vcs Package mounted on epoxy f 1 MHz BSS 80 82 EHP00679 2 855 80 82 00680 400 102 oom Py mW 300 200 Will LE LLL LLLL LIII NE 100 0 50 100 26 150 1071 5 100 5 101 5 102 luf cmi Permissible pulse load Piot ma Pot oc f tp Transition frequency fr f Ic Vce 20V 3 855 80 82 00681 855 80 82 00682 10 LLL 1 0 EL LLL 5 Prot mar NO PEST UI Aral NS SUMI TNI 0 1078 1075 1074 105 10 s 10 109 10 5 10 mA 5 10 h E B El E LA wa ran Semiconductor Group 4 55 80 55 82 f Ic f Ic Delay time Rise time tr Saturation voltage Ic f Vse sat Vce sat here 10 SIEMENS 3 gt gt HHZ SLE 97 i ue i S itt
4. Ves DC current gain Ic 100 10 V BSS 80 B 82 B 40 55 80 82 75 Ic 1 mA V 10 V BSS 80 B 82 B 40 55 80 82 100 Ic 10 mA V 10 V BSS 80 82 40 55 80 82 100 Ic 150 mA 10 V1 BSS 80 82 40 120 55 80 82 100 300 Ic 500 mA Vce 10 V BSS 80 B 82 B 40 BSS 80 82 50 Collector emitter saturation voltage VcEsat V Ic 150 mA Je 15 mA 0 4 Ic 500 mA Je 50 1 6 Base emitter saturation voltage VBEsat Ic 150 mA Je 15 mA 1 3 Ic 500 mA Je 50 2 6 1 Pulse test conditions lt 300 us D 2 96 Semiconductor Group 2 SIEMENS BSS 80 BSS 82 Electrical Characteristics at Ta 25 C unless otherwise specified Parameter Symbol Values Unit AC characteristics Transition frequency f 250 2 20 mA 20 V f 100 MHz Open circuit output capacitance Cobo 6 pF 10 V f 1 MHz Vcc 30 V Ic 150 mA Ie 150 mA Delay time ta 10 ns Rise time tr 40 ns 6 V Ic 150 Ie Ig2 15 mA Storage time tstg 80 5 Fall time tt 30 ns Test circuits Delay and rise time 30V 2000 Input Osc 20 500 f 2ns f 5ns 0 ig 200ns EHN00047 Semiconductor Group Storage and fall time 6V 370 Input Osc 20 500 lt 2 f ons 0 eue 200ns 00048 SI

SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 handbook

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