Panasonic 2SC5077 2SC5077A Manual
Contents
1. Pc Ta Ic V Vcg Ic 60 12 S 100 1 Tc Ta Tc 25 C a Io lg 5 2 With a 100 x 100 x 2mm E 30 50 Al heat sink 10 u Oo 1 3 With a 50 x 50 x 2mm A gt oa Al heat sink RS o 10 ii D S 40 4 TP Sink p S e p lg 1200mA 9 3 2 E 1000mA S 2 30 5 6 800mA S x 8 600mA 5 g 5 400mA S a8 Tc 100 C3 fe 9 300mA qi 9 20 9 4 25 C S o9 200mA E o1 25 C g Oo o 0 3 2 100mA 2 mon 5 o 3 8 0 03 E 0 0 0 01 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 01 03 1 83 10 30 100 Ambient temperature Ta C Collector to emitter voltage Voge V Collector current A Vee sat Ic hrg Ic fr Ic 100 1000 1000 lc lg 5 Vcg 5V Vog 10V f 1MHz E u s To 25 C 30 lt 300 di 300 gt 2 z T 10 100 t 100 S o E 2 o c c c 3 5 30 S 30 5 S xe cd 25 C 3 10 S 10 2 p ET 25 C E SEHE I s 9 03 S 8 F 32. Rug t 10000 Note Ry was measured at Ta 25 C and under natural convection AN 1 Pz210V x 0 2A 2W and without heat sini 2 Pz 10V x 1 0A 10W and with a 100 x 100 x 2mm Al heat sink e 1000 a 100 u o O S 10 2 2 s E o 1 lt E 0 1 104 103 10 107 1 0 10 108 104 Time t s Panasonic 3
3. o LL 7 ea 0 1 1 1 OX 03 1 3 0 30 100 01 03 3 10 30 100 0 01 0 03 0 1 03 8 0 Collector current I A Collector current A Collector current A Cop Vcb tons tstgs te Ic Area of safe operation ASO 1000 100 100 pe lg 0 Pulsed ty 1ms Non repetitive pulse m f 1MHz Duty cycle 1 Tc 25 C Tc 25 C 30 lc lg 5 30 g 300 E 215 755 lcr o 40 Voo 200V z wt pes Tc 25 C cart t 0 5ms 8 100 5 a ims S 5 5 5 totg 10ms N p DC 2 30 o S 8 E o o on o amp 10 2 03 g 03 2 o Si 2 8 o1 5 9 3 0 03 0 03 1 0 0 0 01 1 3 10 30 00 0 1 2 3 4 5 6 7 8 1 8 0 30 100 300 1000 Collector to base voltage Vo V Collector current A Collector to emitter voltage Voe V Panasonic Power Transistors 28C5077 2SC5077A Area of safe operation reverse bias ASO Reverse bias ASO measuring circuit 8 Loi 30KH 000 lc lc lg 5 L coil 7 c g tor fa sS m C T 6 T U T i le I Collector current A 2 EF P2 ee T Vclamp 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage Vcg V
4. Power Transistors Panasonic 25C5077 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high speed switching Unit mm Bl Features 46 0 2 e High speed switching ren 9 9 0 3 2 9 0 2 High collector to base voltage Vcgo Y Wide area of safe operation ASO z N pars HM S 3 Satisfactory linearity of foward current transfer ratio hpg Al a E cy Full pack package with outstanding insulation which can be in i oo stalled to the heat sink with one screw 1 at rH T imos I 12651 ag EX w 14520 15 F 0 7 0 1 x 2 elite ll Absolute Maximum Ratings T 25 C ni 2 f i 1 075201 Parameter Symbol Ratings Unit VU H 2 54 0 2 Collector to 28C5077 800 PTS 0840 4 Vcso V base voltage 2 C5077A 900 fed 23 3 Collectorto 28C5077 800 H 5 CES pese 1 Base emitter voltage 2SCS077A 900 9 Collector Collector to emitter voltage VcEo 500 V 3 Emitter TO 220E Full Pack Packa Emitter to base voltage VeEBo 8 V p erate Peak collector current Top 15 A Collector current Ic T A Base current Ip 4 A Collector power Tc225 C 45 Pc WwW dissipation Ta 25 C 2 Junction temperature T 150 C Storage temperature Tote 55 to 150 C lll Electric
5. al Characteristics Tc 25 C Parameter Symbol Conditions min typ max Unit Collector cutoff 2SC5077 Vcg 800V Ig 0 100 senos cso uA current 2SC5077A Veg 900V Ig 0 100 Emitter cutoff current Igpo Veg SV Ic 0 100 uA Collector to emitter voltage Vcgo Ic 10mA Ip 0 500 uA hrti Veg 5V Ic 0 1A 15 v Forward current transfer ratio hfe2 Vcg 5V Ic 4A 8 Collector to emitter saturation voltage Veega Ic 4A Ip 0 8A 1 0 V Base to emitter saturation voltage Vpr saty Ic 4A Ip 0 8A 1 5 V Transition frequency fr Veg 10V Ic 0 5A f IMHz 1 0 MHz Turn on time ton 1 0 us Ic 4A Ig 0 8A Ig 1 6A Storage time m 3 0 us Vec 200V Fall time tr 0 3 us Panasonic 1 Power Transistors 25C5077 2SC5077A
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Panasonic 2SC5077 2SC5077A Manual