GENERAL SEMICONDUCTOR RGP25A THRU RGP25M Data Sheet
Contents
1. RGP25A THRU RGP25M GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage 50 to 1000 Volts Forward Current 2 5 Amperes DO 201AD 1 0 25 4 MIN 0 375 9 5 0 285 7 2 i 0 210 5 3 0 190 4 8 DIA 0 052 1 32 0 048 1 22 C 4 10 254 MIN m Dimensions in inches and millimeters Glass plastic encapsulation technique is covered by Patent No 3 996 602 and brazed lead assembly by Patent No 3 930 306 apum FEATURES Plastic package has m Underwriters Laboratory B Flammability Classification 94V 0 TES High temperature metallurgically bonded construction Glass passivated cavity free junction 2 5 Ampere operation at TA 55 C with no thermal runaway Typical IR less than 0 2uA Capable of meeting environmental standards of MIL S 19500 Fast switching for high efficiency High temperature soldering guaranteed 350 C 10 seconds 0 375 9 5mm lead length 5 Ibs 2 3kg tension MECHANICAL DATA Case JEDEC DO 201AD molded plastic over glass body Terminals Plated axial leads solderable per MIL STD 750 Method 2026 Polarity Color band denotes cathode end Mounting Position Any Weight 0 04 ounce 1 12 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified2. 01 04 06 08 10 12 1 4 100 10 1 1 6 INSTANTANEOUS FORWARD VOLTAGE VOLTS FIG 5 TYPICAL JUNCTION CAPACITANCE f 1 0 M TJ 25 C Hz Vsig 50mVp p 10 REVERSE VOLTAGE VOLTS 100 FIG 2 MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT 100 INSTANTANEOUS REVERSE LEAKAGE CURRENT PEAK FORWARD SURGE MICROAMPERES CURRENT AMPERES 10 1 0 1 0 01 NUMBER OF CYCLES AT 6 0 Hz FIG 4 TYPICAL REVERSE CHARACTERISTICS N 0 20 40 60 PERCENT OF RATED PEAK REVERSE VOLTAGE 96 GENERAL SEMICONDUCTOR
3. current 0 375 9 5mm lead length at TA 55 C Peak forward surge current 8 3ms single half sine wave superimposed on rated load JEDEC Method Maximum instantaneous forward voltage at 2 5A TA 25 C TA 125 C Maximum full load reverse current full cycle average 0 375 9 5mm lead length at TA 55 C Maximum reverse recovery time NOTE 1 Maximum DC reverse current at rated DC blocking voltage Typical junction capacitance NOTE 2 Typical thermal resistance NOTE 3 Operating junction and storage temperature range NOTES 1 Reverse recovery test conditions IF20 5A In21 0A Ir 0 25A 2 Measured at 1 0 MHz and applied reverse voltage of 4 0 Volts 25A 25B 25D 25G 25J 25K 25M UNITS so 100 800 1000 Volts 700 Volts 50 Voc 50 100 200 400 600 800 1000 Volt SYMBOLS VRRM VRMS 3 Thermal resistance from junction to ambient at 0 375 9 5mm lead length P C B mounted 4 98 100 0 Amps Volts 5 0 250 500 c C 80 pF C W 65 to 175 C GENERAL SEMICONDUCTOR AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES JUNCTION CAPACITANCE pF RATINGS AND CHARACTERISTIC CURVES RGP25A THRU RGP25M FIG 1 FORWARD CURRENT DERATING CURVE RESISTIVE INDUCTIVE OR LOAD 50 100 150 180 AMBIENT TEMPERATURE C FIG 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PULSE WIDTH 300us J 1 DUTY CYCLE
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GENERAL SEMICONDUCTOR RGP25A THRU RGP25M Data Sheet