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lnternational IOR Rectifier IRF1310NS/L handbook

1. 12 di dt lt 180A us Vpp lt V BR DSs When mounted on 1 square PCB FR 4 or G 10 Material For recommended soldering techniques refer to application note AN 994 CD Pulse width lt 300us duty cycle lt 2 G Uses IRF1310N data and test conditions International IRF1310NS L TOR Rectifier 1000 Ve kal Ves TOP 15V TOP TV 10V 10V i 5 5 0V BOTTOM 4 5V 100 BOTTOM 4 5V 100 Ip Drain to Source Current A Ip Drain to Source Current A 10 10 4 5V 4 5V 20us PULSE WIDTH 20us PULSE WIDTH Ty 25 C Ts 175 C o1 1 10 100 0 1 1 10 100 Vps Drain to Source Voltage V Vps Drain to Source Voltage V Fig 1 Typical Output Characteristics Fig 2 Typical Output Characteristics 1000 ETT e e di eo Ip Drain to Source Current A Rps on Drain to Source On Resistance Normalized Vps 50V 20us PULSE WIDTH 1 0 0 4 0 5 0 6 0 7 0 8 0 90 10 0 60 40 20 0 20 40 60 80 100 120 140 160 180 Vas Gate to Source Voltage V Ty Junction Temperature C Fig
2. 3 Typical Transfer Characteristics Fig 4 Normalized On Resistance Vs Temperature IRF1310NS L International TOR Rectifier Vas 0V f 1MHz Ciss Cys Coa Cas SHORTED rss gd Coss Cds Coa C Capacitance pF 1 10 Vps Drain to Source Voltage V Fig 5 Typical Capacitance Vs Drain to Source Voltage 1000 100 10 Isp Reverse Drain Current A Vas 0V 0 1 02 04 06 08 10 12 14 16 Vsp Source to Drain Voltage V Fig 7 Typical Source Drain Diode Forward Voltage Vas Gate to Source Voltage V FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 120 Qg Total Gate Charge nC Fig 6 Typical Gate Charge Vs Gate to Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY Rpsvon T n xu 100 RS us D 273 St t 4 N Ev N rl 5 zt ER RN SEN t o N s 100us N S N N l Q b NN a 9 S NH ms Mo BEN l To 25 C d 0ms Ty 175 C t Single Pulse 1 10 100 1000 Vps Drain to Source Voltage V Fig 8 Maximum Safe Operating Area International TOR Rectifier IRF1310NS L Rp Vps N
3. AVN V S D U T ra PW gt Vpp t j 10V Pulse Width lt 1 us Duty Factor lt 0 1 Ip Drain Current A Fig 10a Switching Time Test Circuit 150 175 C 1096 t 25 50 75 100 125 Tc Case Temperature j Ves Fig 9 Maximum Drain Current Vs AE sre td on tr ta off tf Case Temperature Fig 10b Switching Time Waveforms 10 o um N 0 2 D 0 50 o 2 o 0 20 0 10 Phu wo A 01 t 5 0 0 1 ri 2 Oa SINGLE PULSE i THERMAL RESPONSE Notes 1 Duty factor D t4 t 2 Peak T y P pm X Zthuc Tc 0 01 0 00001 0 0001 0 001 0 01 0 1 ty Rectangular Pulse Duration sec Fig 11 Maximum Effective Transient Thermal Impedance Junction to Case IRF1310NS L International TOR Rectifier Eas Single Pulse Avalanche Energy mJ 0 25 50 75 100 125 15 Starting T j Junction Temperature Fig 12c Maximum Avalanche Energy Vs Drain Current laS Current Regulator Same Type as D U T Fig 12b Unclamped Inductive Waveforms 10V E Fe 7 VDS D U T Qas Qap Vas gt VG Dern la 7 os Current Sampl
4. S9 Gate to Source Reverse Leakage 100 Ves 20V Oy Total Gate Charge 110 Ip 22A Qgs Gate to Source Charge 15 nC Vps 80V Qa Gate to Drain Miller Charge 58 Vas 10V See Fig 6 and 13 90 ta on Turn On Delay Time 11 Vpp 50V tr Rise Time 56 Ip 22A laor Tum Off Delay Time Ra 3 62 t Fall Time 40 Rp 2 90 See Fig 10 90 Ls Intemal Source Inductance 75 nH MESILA and center of die contact Ciss Input Capacitance 1900 Vas OV Coss Output Capacitance 450 pF Vps 25V Cras Reverse Transfer Capacitance 230 f 1 0MHz See Fig 56 Source Drain Ratings and Characteristics Parameter Min Typ Max Units Conditions l Continuous Source Current OL 42 MOSFET symbol P Body Diode A showing the uk Ism Pulsed Source Current __ 140 integral reverse e Body Diode 06 p n junction diode s Vsp Diode Forward Voltage 1 3 V Ty 25 C ls 22A Vas OV tr Reverse Recovery Time 180 270 ns Ty 25 C lp 22A Or Reverse Recovery Charge 1 2 1 8 uC di dt 100A us ton Forward Turn On Time Intrinsic turn on time is negligible turn on is dominated by Lg Lp Notes O Repetitive rating pulse width limited by max junction temperature See fig 11 O Starting Ty 25 C L 1 7mH Rg 252 Igp lt 22A T lt 175 C las 22A See Figure
5. URRS Part Marking Information D Pak INTERNATIONAL RECTIFIER EN uy 10 16 400 International TER Rectifier REF 8 89 350 REF MINIMUM RECOMMENDED FOOTPRINT LEAD ASSIGNMENTS 1 GATE 2 DRAIN 3 SOURCE ISR9246 LOGO ASSEMBLY a LOT CODE 3 81 150 2 08 082 2X 7 PART NUMBER DATE CODE YYWW YY YEAR WW WEEK 11 43 450 I International IRF1310NS L TOR Rectifier Package Outline TO 262 Outline 10 54 415 4 69 185 10 29 405 69 1 22 048 10 54 415 9 91 390 1 15 045 14 09 555 4 06 160 13 47 530 3 55 140 0 55 022 E 1 40 055 0 46 018 1 15 045 0 93 037 2 92 115 2 64 104 2 54 100 0 69 027 iioi 2X 0 36 1 014 BJa Gy NOTES 3X 1 DIMENSIONING amp TOLERANCING PER ANSI Y14 5M 1982 LEAD ASSIGNMENTS 2 CONTROLLING DIMENSION INCH GATE 3 SOURCE 3 DIMENSIONS ARE SHOWN IN MILLIMETERS INCHES DRAIN 4 DRAIN 4 HEATSINK amp LEAD DIMENSIONS DO NOT INCLUDE BURRS Part Marking Information TO 262 EXAMPLE THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19 1997 IN THE ASSEMBLY LINE C INTERNATIONAL PART NUMBER RECTIFIER LOGO DATE CODE YEAR 7 1997 WEEK 19 LINE C ASSEMBLY LOT CODE IRF1310NS L Internat
6. ing Resistors Charge Fig 13a Basic Gate Charge Waveform Fig 13b Gate Charge Test Circuit TOR Rectifier International IRF1310NS L Peak Diode Recovery dv dt Test Circuit Peak Diode Recovery dv dt Test Circuit Circuit Layout Considerations Low Stray Inductance O e Ground Plane e Low Leakage Inductance Current Transformer D U T e dv dt controlled by Re e Driver same type as D U T _ Vpp Isp controlled by Duty Factor D D U T Device Under Test Driver Gate Drive Period D 4EM P W Period t Vgs 10V 06 pe D U T lgp Waveform 95 Reverse Recovery Body Diode Forward Current Current Pa di dt D U T Vpg Waveform Diode Recovery N dv dt i Body Bader Forward Drop lt DD Re Applied Voltage Inductor Curent Ripple lt 5 Vas 5V for Logic Level Devices Fig 14 For N Channel HEXFETS IRF1310NS L D Pak Package Outline 1 40 055 MAX 10 54 415 29 405 15 49 610 14 73 580 NOTES 5 08 200 n AL 93 037 69 027 L 0 3X 9 W 0 25 010 1 DIMENSIONS AFTER SOLDER DIP 2 DIMENSIONING 8 TOLERANCING PER ANSI Y14 5M 1982 3 CONTROLLING DIMENSION INCH 4 HEATSINK amp LEAD DIMENSIONS DO NOT INCLUDE B
7. ional TOR Rectifier Tape amp Reel Information D Pak 24 30 957 23 90 941 10 90 429 10 70 421 4 72 186 16 10 634 4 52 178 15 90 626 FEED DIRECTION 13 50 532 12 80 504 60 00 2 362 MIN 30 40 1 197 MAX NOTES 1 COMFORMS TO EIA 418 26 40 1 039 O 2 CONTROLLING DIMENSION MILLIMETER 24 40 961 7 T 3 DIMENSION MEASURED HUB INCLUDES FLANGE DISTORTION OUTER EDGE International TSR Rectifier WORLD HEADQUARTERS 233 Kansas St EI Segundo California 90245 Tel 310 322 3331 EUROPEAN HEADQUARTERS Hurst Green Oxted Surrey RH8 9BB UK Tel 44 1883 732020 IR CANADA 7321 Victoria Park Ave Suite 201 Markham Ontario L3R 2Z8 Tel 905 475 1897 IR GERMANY Saalburgstrasse 157 61350 Bad Homburg Tel 49 6172 96590 IR ITALY Via Liguria 49 10071 Borgaro Torino Tel 39 11 451 0111 IR FAR EAST K amp H Bldg 2F 30 4 Nishi Ikebukuro 3 Chome Toshima Ku Tokyo Japan 171 Tel 81 3 3983 0086 IR SOUTHEAST ASIA 315 Outram Road 10 02 Tan Boon Liat Building Singapore 0316 Tel 65 221 8371 http www irf com Data and specifications subject to change without notice 5 98
8. ower Dissipation 3 8 W Pp OTc 25 C Power Dissipation 160 W Linear Derating Factor 1 1 W C Vas Gate to Source Voltage 20 V Eas Single Pulse Avalanche EnergyO 420 mJ lan Avalanche Current 22 A Ear Repetitive Avalanche Energy 16 mJ dv dt Peak Diode Recovery dv dt 90 5 0 V ns Tj Operating Junction and 55 to 175 TsTG Storage Temperature Range ec Soldering Temperature for 10 seconds 300 1 6mm from case Thermal Resistance Parameter Typ Max Units R8JC Junction to Case 0 95 Rea Junction to Ambient PCB Mounted steady state 40 iil 5 13 98 IRF1310NS L International TOR Rectitier Electrical Characteristics Ty 25 C unless otherwise specified Parameter Min Typ Max Units Conditions V BR DSS Drain to Source Breakdown Voltage 100 V Vas OV Ip 250A AVerypss ATy Breakdown Voltage Temp Coefficient 0 11 V C Reference to 25 C Ip 1mAG Rps on Static Drain to Source On Resistance 0 036 2 Vas 10V Ip 22A Vas h Gate Threshold Voltage 2 0 40 V Vps Vas lp 2504A Ofs Forward Transconductance 14 S Vps 25V lp 22A0 bss Drain to Source Leakage Current sa uA Aas 100V Wigs 250 Vps 80V Ves OV Ty 150 C Gate to Source Forward Leakage 100 nA Vas 20V 9
9. zr s SIRF1310NL fn gS PD 91514B International TSR Rectifier IRF1310NS L HEXFET Power MOSFET e Advanced Process Technology e Surface Mount IRF1310NS Vpss 100V e Low profile through hole IRF1310NL e 175 C Operating Temperature Rps on 0 0362 e Fast Switching G e Fully Avalanche Rated Ip 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area This benefit combined with the fast switching speed and ruggedized device designthat HEXFET Power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications The D Pak is a surface mount power package capable of accommodating die sizes up to HEX 4 It provides the highest power capability and the lowest possible on resistance in any existing surface mount package The D Pakis suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 0W in a typical surface mount application The through hole version IRF1310NL is available for low profile applications Absolute Maximum Ratings Parameter Max Units lp Tc 25 C Continuous Drain Current Vas 10V 42 lp Tc 100 C Continuous Drain Current Vas 10VO 30 A low Pulsed Drain Current OO 140 Pp OT A 25 C P

lnternational IOR Rectifier IRF1310NS/L handbook

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