lnternational IOR Rectifier IRF130 handbook
Contents
1. 1 ES PD 90333F Internationa ex f I amp R Rectifier REPETITIVE AVALANCHE AND dv dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU HOLE TO 204AA AE REF MIL PRF 19500 542 100V N CHANNEL Product Summary Part Number BVDSS Rps on Ip IRF130 100V 0 180 14 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest State of the Art design achieves very low on state resis tance combined with high transconductance superior re verse energy and diode recovery dv dt capability The HEXFET transistors also feature all of the well estab lished advantages of MOSFETs such as voltage control very fast switching ease of paralleling and temperature Features stability of the electrical parameters Repetitive Avalanche Ratings They are well suited for applications such as switching Dynamic dv dt Rating power supplies motor controls inverters choppers audio Hermetically Sealed Simple Drive Requirements amplifiers and high energy pulse circuits Ease of Paralleling Absolute Maximum Ratings Parameter Ip VGs 0V 25 C Continuous Drain Current 14 Ip VGs Tc 100 C Continuous Drain Current IDM Pulsed Drain Current 56 Pp Tc 25 C Max Power Dissipation 75 Linear Derating Factor 0 60 VGS Gate to Source Voltage 202. Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Max VGs OV 25 f 1 0MHz Test Conditions Continuous Source Current Body Diode 14 Pulse Source Current Body Diode 56 Diode Forward Voltage 1 5 25 15 14A VGs 0V Reverse Recovery Time 300 Reverse Recovery Charge 3 0 Tj 25 C Ip di dt lt 100A us lt 50 Forward Turn On Time Thermal Resistance Parameter Test Conditions Junction to Case Junction to Ambient Typical socket mount For footnotes refer to the last page 2 www irf com International IRF130 Rectifier 15 T MI B Ei E 6 e G p mE EE z ae e s 1 L 1 rt 20us PULSE WIDTH 20us PULSE WIDTH Te 2596 Te 150 C 1 Vps DRAIN T0 SOURCE VOLTAGE VOL TS DRAIN T SOURCE VOLTAGE VOLTS Fig 1 Typical Output Characteristics Fig 2 Typical Output Characteristics L T m REN EAS i aT Pt tt tt ee TT mL ELLE LEE HEEN ge ptt te g oo 58 E PA 9974 Cer L 2 L LLLI ee
3. Single Pulse Avalanche Energy 75 Avalanche Current D 14 Repetitive Avalanche Energy D 7 5 Peak Diode Recovery dv dt 5 5 Operating Junction 55 to 150 Storage Temperature Range Lead Temperature 300 0 063 in 1 6mm from case for 10s Weight 11 5 typical For footnotes refer to the last page www irf com 1 01 22 01 IRF130 International Rectifier Electrical Characteristics Tj 25 C Unless Otherwise Specified Parameter Test Conditions BVpss Drain to Source Breakdown Voltage VGs OV Ip 1 0mA ABVpSS ATJ Temperature Coefficient of Breakdown Voltage Reference to 25 C Ip 1 0mA RDS on Static Drain to Source On State Resistance VGs 10V Ip 9 0A VGs 10V Ip 14A VGS th Gate Threshold Voltage Forward Transconductance VDS VGS Ip 250 Vps gt 15 Ips 9 0A Zero Gate Voltage Drain Current Vps 80V VGS 0V Vps 80V VGs OV Ty 125 C Gate to Source Leakage Forward VGS 20V Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Miller Charge VGS 20V VGs 10 ID 14A Vps 50V Turn On Delay Time Rise Time Turn Off Delay Time Fall Time VDD 50V Ip 14A 750 Total Inductance Measured from drain lead 6mm 0 25in from package to source lead 6mm 0 25in from package
4. lt 100V Ty 150 C Q Vpp 50V starting Ty 25 C Suggested RG 7 50 Peak Ip 14 Pulse width lt 300 us Duty Cycle lt 2 Case Outline and Dimensions TO 204AA Modified TO 3 ASSIGNMENTS HEXFET SCHOTTKY IGBT 1 1 GATE 2 E 2 EMITTER es ON CATHODE CASE 3 COLLECTOR CASE 2X NOTES 1 JIMENSIONING amp TOLERANCING PER ANSI 14 5 1982 INCH OWN IN MILLIMETERS INCHES OUTLINE TO 20 International I amp R Rectitier IR WORLD HEADQUARTERS 233 Kansas St El Segundo California 90245 USA Tel 310 252 7105 IR EUROPEAN REGIONAL CENTRE 439 445 Godstone Rd Whyteleafe Surrey CR3 OBL UK Tel 44 0 20 8645 8000 IR CANADA 15 Lincoln Court Brampton Ontario L6T3Z2 Tel 905 453 2200 IR GERMANY Saalburgstrasse 157 61350 Bad Homburg Tel 49 0 6172 96590 IR ITALY Via Liguria 49 10071 Borgaro Torino Tel 39 011 451 0111 IR JAPAN K amp H Bldg 2F 30 4 Nishi Ikebukuro 3 Chome Toshima Ku Tokyo 171 Tel 81 0 3 3983 0086 IR SOUTHEAST ASIA 1 Kim Seng Promenade Great World City West Tower 13 11 Singapore 237994 Tel 65 0 838 4630 IR TAIWAN 16 Fl Suite D 207 Sec 2 Tun Haw South Road Taipei 10673 Tel 886 0 2 2377 9936 Data and specifications subject to change without notice 1 01 www irf com 7
5. TE TT Pt ttt tty LI ET LIE vss cov 4 5 10 60 40 20 0 20 40 680 80 100 120 140 160 Ves GATE T0 SOURCE VOLTAGE VOLTS T JUNCTION TEMPERATURE C Fig 3 Typical Transfer Characteristics Fig 4 Normalized On Resistance Vs Temperature www irf com 3 IRF130 1MHz C CAPACITANCE pf 100 101 Vps ORAIN TO SOURCE VOLTAGE VOLTS Fig 5 Typical Capacitance Vs Drain to Source Voltage Isp REVERSE DRAIN CURRENT AMPERES wo 1 4 0 4 0 i 1 8 2 3 2 8 SOURCE TO DRAIN VOLTAGE VOLTS Fig 7 Typical Source Drain Diode Forward Voltage International Rectifier Vos GATE TO SOURCE VOLTAGE VOLTS 9 8 16 24 32 49 g TOTAL GATE CHARGE nC Fig 6 Typical Gate Charge Vs Gate to Source Voltage OPERATION IN THIS AREA LIMITED H BY Alps 5 ac NT as 8 NU 5 1 E Lw LITR a u 1 T 150 C q sims ruse Th 2 5 40 2 5 492 2 5 103 Vps ORAIN TO SOURCE VOLTAGE VOLTS Fig 8 Maximum Safe Operating Area www irf com International Rectifier DRAIN CURRENT AMPERES THERMAL RESPONSE IRF130 Rp Vos V D UT Re PWV gt Npp n 10 Pulse Width lt
6. 1 us Duty Factor x 0 1 Fig 10a Switching Time Test Circuit Vps a 2 50 75 100 125 150 To CASE TEMPERATURE 0C 10 Ju mE Fig 9 Maximum Drain Current Vs td on tr ta off tf Case Temperature Fig 10b Switching Time Waveforms 10 oe L L PS ESL s PEE PP ms H Li 0 1 a TE L LETBIE aerem LIH LLLI e nene notos x zene te 1074 1073 1 10 t4 RECTANGULAR PULSE DURATION SECONDS Fig 11 Maximum Effective Transient Thermal Impedance Junction to Case 5 www irf com IRF130 DRIVER NER Fig 12b Unclamped Inductive Waveforms gt 10V Qas lt 0 Charge gt Fig 13a Basic Gate Charge Waveform Eag SINGLE PULSE ENERGY Jj International Rectifier PEAK Ij 14A 25 STARTING T JUNCTION TEMPERATURE C Fig 12c Maximum Avalanche Energy Vs Drain Current Current Regulator Same Type as D U T J but T DS D ama ET tN la Ip Current Sampling Resistors Fig 13b Gate Charge Test Circuit www irf com International IRF130 Rectifier Foot Notes D Repetitive Rating Pulse width limited by G Isp lt di dt 140A us maximum junction temperature
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